Abstract: A system for analyzing excreta includes at least a portion configured to be embedded in a toilet and to collect at least a portion of excreta, and includes a plurality of rotating chambers assigned uniquely to each user and configured to produce a supernatant from the collected excreta, and wherein the system is configured to analyze excreta from multiple users and associate results with each of the multiple users. A method for analyzing excreta comprises collecting at least a portion of excreta from a toilet using a system that is at least partially embedded in the toilet, generating acoustic waves that solubilize the collected excreta, and analyzing the solubilized collected excreta. A method for analyzing excreta comprises collecting at least a portion of excreta from a toilet using a system that is at least partially embedded in the toilet, and acquiring assay data from the collected excreta utilizing an optical disc reader.

Abstract: In an embodiment, a system for analyzing excreta, wherein the system is configured to collect and analyze at least a portion of an excreta, wherein at least a portion of the system is configured to be embedded in an excreta disposal unit, and wherein the system comprises at least one electronic device. In a further embodiment, an analysis system for analyzing excreta, comprises a first portion configured to be connected to an excreta disposal unit and configured to collect at least a portion of an excreta, and a second portion configured to homogenize the at least a portion of the excreta collected by the first portion. In a further embodiment, an analysis system for analyzing excreta comprises a first portion of configured to be connected to an excreta disposal unit and configured to collect at least a portion of an excreta, and wherein the analysis system is configured to detect analyte from multiple users.

Abstract: A transistor, such as a vertical metal field effect transistor, can include a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate comprising of AlGaN-based materials and electrodes disposed on the second side of the substrate. The transistor can also include a plurality of semiconductor layers and a dielectric layer disposed between the plurality of semiconductor layers and electrode materials.

Abstract: A transistor device, such as a rotated channel metal oxide/insulator field effect transistor (RC-MO(I)SFET), includes a substrate including a non-polar or semi-polar wide band gap substrate material such as an Al2O3 or a ZnO or a Group-III Nitride-based material, and a first structure disposed on a first side of the substrate comprising of AlInGaN-based and/or ZnMgO based semiconducting materials. The first structure further includes an intentional current-conducting sidewall channel or facet whereupon additional semiconductor layers, dielectric layers and electrode layers are disposed and upon which the field effect of the dielectric and electrode layers occurs thus allowing for a high density monolithic integration of a multiplicity of discrete devices on a common substrate thereby enabling a higher power density than in conventional lateral power MOSFET devices.

Abstract: This disclosure provides a transistor device formed on a wide band gap substrate. The transistor device includes a channel layer and a gate structure physically coupled to the channel layer. The gate structure can be formed on the channel layer using an epitaxial process instead of a lithographic process, thereby providing a mechanism to build small semiconductor features that are smaller than a resolution of the state-of-the-art lithographic process and reducing the amount of impurities between the channel layer and the gate structure.

Abstract: A transistor device, such as a rotated channel metal oxide/insulator field effect transistor (RC-MO(I)SFET), includes a substrate including a non-polar or semi-polar wide band gap substrate material such as an Al2O3 or a ZnO or a Group-III Nitride-based material, and a first structure disposed on a first side of the substrate comprising of AlInGaN-based and/or ZnMgO based semiconducting materials. The first structure further includes an intentional current-conducting sidewall channel or facet whereupon additional semiconductor layers, dielectric layers and electrode layers are disposed and upon which the field effect of the dielectric and electrode layers occurs thus allowing for a high density monolithic integration of a multiplicity of discrete devices on a common substrate thereby enabling a higher power density than in conventional lateral power MOSFET devices.

Abstract: Methods of forming planar zinc-oxide based epitaxial layers, associated heterostructures, and devices are provided.

Abstract: A transistor, such as a vertical metal field effect transistor, can include a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate comprising of AlGaN-based materials and electrodes disposed on the second side of the substrate. The transistor can also include a plurality of semiconductor layers and a dielectric layer disposed between the plurality of semiconductor layers and electrode materials.

Abstract: Methods of forming planar zinc-oxide based epitaxial layers, associated heterostructures, and devices are provided.

Abstract: A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm?3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels.

Abstract: A light-emitting device, such as a light-emitting diode (LED), is grown on a substrate including a ZnO-based material. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device is removed from the substrate or the substrate is substantially thinned to improve light emission efficiency of the device.

Abstract: A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm?3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels.

Abstract: A light-emitting device, such as a light-emitting diode (LED), includes a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device further includes at least one textured light emission surface arranged to extract at least some light generated within the device.

Abstract: Devices and methods of fabrication of ZnO based single and multi-junction photovoltaic cells are disclosed. ZnO based single and multijunction photovoltaic cells, and other optoelectronic devices include p-type, n-type, and undoped materials of ZnxA1-xOyB1-y, wherein the alloy composition A and B, expressed by x and y, respectively, varies between 0 and 1. Alloy element A is selected from related elements including Mg, Be, Ca, Sr, Cd, and In and alloy element B is selected from a related elements including Te and Se. The selection of A, B, x and y, allows tuning of the material's band gap. The band gap of the material may be selected to range between approximately 1.4 eV and approximately 6.0 eV. ZnxA1-xOyB1-y based tunnel diodes may be formed and employed in ZnxA1-xOyB1-y based multi-junction photovoltaic devices. ZnxA1-xOyB1-y based single and multi-junction photovoltaic devices may also include transparent, conductive heterostructures and highly doped contacts to ZnO based substrates.

Abstract: A method of metalorganic chemical vapor deposition includes converting a condensed matter source to provide a first gas, the source including at least one element selected from the group consisting of gold, silver and potassium. The method further includes providing a second gas comprising zinc and a third gas comprising oxygen, transporting the first gas, the second gas, and the third gas to a substrate, and forming a p-type zinc-oxide based semiconductor layer on the substrate.

Abstract: Solid state piezoelectric or Lorentzian components are utilized to generate electrical energy in an implanted device. The energy generated from tissue displacement is stored and made available for use as a cardiac pacing charge to be delivered by the device when a triggering condition, such as an arrhythmia is detected. A plurality of implanted devices can be used to collectively provide one or more pacing charges.