Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

Abstract: A layer of chromium metal is electroplated from trivalent chromium onto an electrically conducting substrate by immersing the substrate and a counter electrode in a electroplating bath and passing a modulated electric current between the electrodes. In one embodiment, the current contains pulses that are cathodic with respect to said substrate and in another embodiment the current contains pulses that are cathodic and pulses that are anodic with respect to said substrate. The cathodic pulses have a duty cycle greater than about 80%.

Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

Abstract: Disclosed herein are methods of electroplating which may include placing a substrate, an anode, and an electroplating solution in an electroplating cell such that the substrate and the anode are located on opposite sides of a fluidically-permeable plate, setting the configuration of one or more seals which, when in their sealing configuration, substantially seal pores of the fluidically-permeable plate, and applying an electrical potential between the anode and the first substrate sufficient to cause electroplating on the first substrate such that the rate of electroplating in an edge region of the first substrate is affected by the configuration of the one or more seals. Also disclosed herein are apparatuses for electroplating which may include one or more seals for substantially sealing a subset of the pores in a fluidically-permeable plate whose sealing configuration affects a rate of electroplating in an edge region of the substrate.

Abstract: An apparatus for electroplating metal on a substrate while controlling plating uniformity includes in one aspect: a plating chamber having anolyte and catholyte compartments separated by a membrane; a primary anode positioned in the anolyte compartment; an ionically resistive ionically permeable element positioned between the membrane and a substrate in the catholyte compartment; and a secondary electrode configured to donate and/or divert plating current to and/or from the substrate, wherein the secondary electrode is positioned such that the donated and/or diverted plating current does not cross the membrane separating the anolyte and catholyte compartments, but passes through the ionically resistive ionically permeable element. In some embodiments the secondary electrode is an azimuthally symmetrical anode (e.g., a ring positioned in a separate compartment around the periphery of the plating chamber) that can be dynamically controlled during electroplating.

Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

Abstract: An apparatus for electroplating metal on a substrate while controlling plating uniformity includes in one aspect: a plating chamber having anolyte and catholyte compartments separated by a membrane; a primary anode positioned in the anolyte compartment; an ionically resistive ionically permeable element positioned between the membrane and a substrate in the catholyte compartment; and a secondary electrode configured to donate and/or divert plating current to and/or from the substrate, wherein the secondary electrode is positioned such that the donated and/or diverted plating current does not cross the membrane separating the anolyte and catholyte compartments, but passes through the ionically resistive ionically permeable element. In some embodiments the secondary electrode is an azimuthally symmetrical anode (e.g., a ring positioned in a separate compartment around the periphery of the plating chamber) that can be dynamically controlled during electroplating.

Abstract: A layer of chromium metal is electroplated from trivalent chromium onto an electrically conducting substrate by immersing the substrate and a counter electrode in a electroplating bath and passing a modulated electric current between the electrodes. In one embodiment, the current contains pulses that are cathodic with respect to said substrate and in another embodiment the current contains pulses that are cathodic and pulses that are anodic with respect to said substrate. The cathodic pulses have a duty cycle greater than about 80%.

Abstract: A layer of chromium metal is electroplated from trivalent chromium onto an electrically conducting substrate by immersing the substrate and a counter electrode in a electroplating bath and passing a modulated electric current between the electrodes. In one embodiment, the current contains pulses that are cathodic with respect to said substrate and in another embodiment the current contains pulses that are cathodic and pulses that are anodic with respect to said substrate. The cathodic pulses have a duty cycle greater than about 80%.