Abstract: A method for producing smooth uniform polymethylmethacrylate (PMMA) layers having a thickness of greater than 20 .mu.m. The PMMA layers are produced utilizing a solution of polymethylmethacrylate in an ester of lactic acid. The PMMA layers are particularly suited for micro-structuring techniques which utilize high-energy, ionizing radiation. The PMMA layers exhibit a good adhesion to metallic, semi-conducting and insulating substrates.

Abstract: Methods for producing beam shaping diaphragms for lithographic devices in which a silicon layer is epitaxially deposited on a semiconductor body and the epitaxial layer is formed in the central region as a self-supporting membrane and is formed with preferably straight line-shaped quadratic recesses which have perpendicular limiting surfaces. Photolithographic processes and galvanic second-casting techniques may be used in the process for producing the beam-shaping diaphragm. The beam-shaping diaphragm can also be produced in lightly doped epitaxial layers by using electro-chemical etching methods.

Abstract: A method for manufacturing a control plate for a lithographic device. The control plate manufactured with a method of the present invention is essentially composed of a semiconductor substrate having an opening for the passage of particle probes emanating from a multi-beam source and of a corresponding plurality of deflection elements that are connected via bond pads and connecting lines to the electronics of the lithographic device that generates control signals. Lithographic methods and voltaic shaping techniques are utilized for the manufacture of the deflection elements located on the semiconductor substrate which is coated with a dielectric.

Abstract: For testing an interconnect network for shorts and interruptions, a point of the network to be tested is charged with a particle beam. Subsequently, a potential at least one further contact point is read with the same particle beam and an unaltered primary energy. An identification of potential occurs by documenting the secondary electrons triggered at the contact points. In order to avoid a disturbing change of potential during the measuring phase, the measuring time is only a fraction of the time for charging the network.

Abstract: An aperture diaphragm for lithography apparatus which has a line-shaped multi-hole structure comprising blanking electrodes for generating a plurality of individually blankable particle beam probes for lithography apparatus comprising a particle beam source, a condenser lens, a blanking diaphragm and imaging optics and a workpiece to be structured such as a semiconductor body wherein a simple aperture diaphragm is composed of a high resistant substrate such as silicon or silicon dioxide upon which blanking electrodes are formed in the form of interconnects which are provided with terminals for applying blanking voltages.

Abstract: For localization of the defects on mask and wafers generated by particle occupation, electron-optical imaging methods have been developed where the subject to be examined is scanned with a focused electron beam. Since the signal-to-noise ratio needed for a reliable defect recognition limits the scan rate, the throughput of inspected subjects remains low. It is therefore proposed that the subject be scanned with a line-shaped electron probe and that the triggered secondary electons be imaged onto a detector with the assistance of an electron optics comprising an immersion lens, whereby one line element of the surface region illuminated by the electron probe is assigned to each detector element.

Abstract: Beam generating system for electron beam measuring instruments. In prior art beam generators, the life expectancy of directly heated boride cathodes is limited by their thermally disadvantageous mount. The present invention provides a cathode not clamped at the lower end of the crystal shank as was previously standard, but clamped immediately below the cathode tip. The inventive mount of the boride cathode results in the crystal being only insignificantly hotter in the region of the clamping plane than at the electron-emitting tip.

Abstract: A diaphragm system includes two diaphragms provided with the same multi-aperture arranged following one another in a beam path of lithography equipment so that recesses in the first diaphragm coincide with corresponding recesses in the second diaphragm. A primary particle beam is directed onto the first diaphragm which is equipped with deflection elements for individual displacement of the particle probes in a plane of the second diaphragm. In a second embodiment, the diaphragm system provides simultaneous variation of the cross section of all particle probes by providing that one of the two diaphragms be displaceable in a plane perpendicular to the beam direction.

Abstract: For electro-optical image conversion as well as for optical image processing by spatial filtering, a two-dimensional optical filter is provided which comprises a microstructured grid, the openings of which are designed as a matrix of windows, the windows being provided with electrostatically movable thin-film closures. The window openings are controlled by electrostatic charges which are provided by an electron beam. This matrix of light valves can preferably be used as a electro-optical converter as well as a Fourier filter in an optical computer.

Abstract: Lithographic apparatus for producing microstructures which comprises a particle beam source 1 and a condenser lens system 2, 3 and a controllable aperture diaphragm 4 having line-shaped multi-hole structures 17 . . . 22 for generating a plurality of particle beam fingers. A blanking diaphragm and an imaging optic structure 6, 7 OL are also provided. The invention produces a higher output of exposed structures than the prior art and for this purpose the particle beams are combined to form a ribbon beam which has the greatest cross-sectional dimension 12, 13 approximately in the longitudinal direction 23 of the line-shaped multi-hole structure 17 . . . 22 and which has the smallest cross-sectional dimension which does not significantly exceed the width of the multi-hole structure. The multiple beams are utilized in lithographic apparatus for generating semiconductor circuits in the submicrometer region on a GaAs base and for generating components for optical communications technology.

Abstract: An electron beam apparatus has a primary beam directed onto a point of a specimen to generate emerging secondary electrons that proceed to a detector after traversing an electrical extraction field. The extraction field is provided between electrodes arranged in a plane perpendicular to the optical axis of the electron beam device and a magnetic field is provided perpendicular to the electrical extraction field to compensate for the forces of the extraction field exerted on the primary beam yet to promote extraction of the secondary electrons.

Abstract: A method and apparatus for measuring lengths in a scanning particle microscope employ a device for generating a particle beam directed toward a specimen stage on which a specimen is mounted. A second stage is placed over the specimen stage above the specimen, the second stage carrying a calibrated grid structure covering the region of the specimen to be measured. The grid structure is disposed a distance from the specimen which is less than or equal to the depth of focus of the apparatus. The grid structure is of known dimensions, and is utilized to provide bench marks for measuring distances on the specimen, and can be displaced as needed to measure longer distances.

Abstract: A method and an apparatus are provided for electrical testing of continuity in microwired structures in which at least one first circuit node is electrically charged with at least one first particle probe and at least one second circuit node is sensed with at least one second particle probe to determine whether it has an electrically conductive connection to at least one first circuit node. Such a method and such an apparatus should, with relatively simple structure, enable the charging at microwired structures to be measured in a tracking manner, a switching of the beam generator to various values of primary energy is avoided and all disadvantages connected with a secondary electron signal are suppressed. At least one second particle probe is deflected in the region of the electrical fields that extend from the at least one second circuit node. The potential at this second circuit node is qualitatively and quantitatively identified by way of the deflection of the second particle probe which thereby occurs.

Abstract: A sampling method for potential determination in electron beam mensuration, in which a progression of a periodic signal is to be identified at a measuring point, makes it possible to clearly increase the speed in electron beam potential measurement. The progression of the periodic signal is sampled by the pulsed electron beam repeatedly during a period of the progression of the periodic signal, namely at the specified times t.sub.1, t.sub.2. . . t.sub.n.

Abstract: A mask for corpuscular lithography permits a short exposure time for generating structures on semiconductor wafers, and provides a cost reduction of such structure generation. The mask has a tunnel cathode in corpuscle-emitting regions.

Abstract: An arrangement for electrically testing microinterconnections with electric test contacts may be used given drastically-reduced dimensions of electric conductors and of the grid dimensions in printed circuitboards. The electric test contacts are selectable by way of internal switches. The test contacts can be disposed in a matrix whose grid dimension corresponds to the grid dimension of a printed circuitboard to be tested.

Abstract: A method for the contactless testing of an object, particularly microcircuits, employs a particle beam probe to permit a resistance determination in a load-free fashion and without chronological variations of the charge state of the object. A first measuring spot is irradiated with a write beam of approximately a primary electron energy E.sub.PE =2E.sub.o, whereby E.sub.o is that particular energy at which the number of charges leaving the object is equal to the number of charges incident on the object. Then an additional measuring spot is checked as to whether it exhibits a conductive connection with the first measuring spot. The second measuring spot can be checked as to whether a specimen current is flowing. On the second measuring spot a read current of approximately a primary electron energy E.sub.PE =E.sub.o can be directed.

Abstract: An arrangement for particle beam measurement utilizes, an objective for the imaging of primary probe particles on a specimen and a spectrometer for the detection of secondary particles. The arrangement also utilizes the superposition of the electric field of the spectrometer with the electric field of the objective lens to render possible an effective increase of the probe current and/or an improved potential resolution. A portion of the field of the objective is provided for the focusing of the secondary particles onto an electrode for determining energy selection.

Abstract: An apparatus for the potential measuring technique has an objective lens for focusing primary electrons onto an object, and also has a spectrometer for the energy selection of secondary electrons to provide an improvement of the quantitative potential measurement on printed conductors of integrated microelectronic components with improved local resolution, higher probe current, and improved potential resolution. The objective lens is a magnetic lens in which the lens field lies largely outside the lens body, and the spectrometer is an electrostatic retarding field spectrometer arranged in the magnetic field of the lens.

Abstract: An electron-optical system with a variable-shaped beam for generating and measuring microstructures, such as circuits on a semiconductor substrate, generates the variable-shaped electron beam by the use of electron-optical shadow projection imaging and has a remote focus multipole Wehnelt electrode for adjusting, focusing, and controlling the intensity of the electron beam. The system also has a ferrite polecylinder in the beam projections lens with field attenuation or may have a beam projection lens with an external air gap. The length of the electron beam is approximately 60 centimeters.