Patents by Inventor Burm Baek

Burm Baek has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9577175
    Abstract: An apparatus includes a base layer; and a superconducting nanowire disposed on the base layer in a continuous meander pattern and including an amorphous metal-metalloid alloy such that the apparatus is configured to detect single photons, and the continuous meander pattern includes: a plurality of parallel line segments; and a plurality of curved segments, wherein adjacent parallel line segments are joined by a curved segment.
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: February 21, 2017
    Assignee: THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE
    Inventors: Sae Woo Nam, Burm Baek, Francesco Marsili, Varun Verma
  • Patent number: 9240539
    Abstract: A superconducting nanowire single photon detector (SN-SPD) microelectronic circuit is described which has higher quantum efficiency and signal-to-noise than any SN-SPD's known in the art. The material and configuration of the microelectronic circuit eliminates the polarization dependence and shows improved signal-to-noise over SN-SPD microelectronic circuits known in the art. The higher efficiency, polarization independence, and high signal-to-noise is achieved by vertically stacking two tungsten-silicide (TS) SN-SPDs and electrically connecting them in parallel. This structure forms a multilayer superconducting nanowire avalanche photo-detector (SNAP). A single photon detection device employing the multilayer (SNAP) microelectronic circuit demonstrates a peak system detection efficiency of 87.7% and a polarization dependence of less than 2%. This represents nearly an order of magnitude improvement in both system detection efficiency and reduction of polarization dependence compared to conventional SNSPDs.
    Type: Grant
    Filed: April 24, 2013
    Date of Patent: January 19, 2016
    Assignee: National Institute of Standards and Technology
    Inventors: Sae Woo Nam, Burm Baek, Francesco Marsilli, Varun Verma
  • Publication number: 20140087952
    Abstract: A superconducting nanowire single photon detector (SN-SPD) microelectronic circuit is described which has higher quantum efficiency and signal-to-noise than any SN-SPD's known in the art. The material and configuration of the microelectronic circuit eliminates the polarization dependence and shows improved signal-to-noise over SN-SPD microelectronic circuits known in the art. The higher efficiency, polarization independence, and high signal-to-noise is achieved by vertically stacking two tungsten-silicide (TS) SN-SPDs and electrically connecting them in parallel. This structure forms a multilayer superconducting nanowire avalanche photo-detector (SNAP). A single photon detection device employing the multilayer (SNAP) microelectronic circuit demonstrates a peak system detection efficiency of 87.7% and a polarization dependence of less than 2%. This represents nearly an order of magnitude improvement in both system detection efficiency and reduction of polarization dependence compared to conventional SNSPDs.
    Type: Application
    Filed: April 24, 2013
    Publication date: March 27, 2014
    Applicant: The United States of America as represented by the Secretary of Commerce
    Inventors: Sae Woo Nam, Burm Baek