Abstract: A method for forming N conductivity-type regions in a silicon substrate comprising ion implanting arsenic to form a region in said substrate having an arsenic atom concentration of at least 1 .times. 10.sup.-2 As atoms/total atoms in substrate, and ion implanting germanium into said substrate region. Even though the atomic radius of arsenic is very close to that of silicon -- the arsenic radius is only 0.5% smaller -- when high arsenic atom concentrations of at least 1 .times. 10.sup.-2 atoms/total atoms in the substrate are introduced in the substrate, and such high concentrations are only possible when arsenic is ion implanted, then atomic misfit dislocations will occur. The implanted germanium atoms compensate for the lattice strain in the silicon to minimize dislocations.

Abstract: A method for forming N conductivity-type regions in a silicon substrate comprising ion implanting arsenic to form a region in said substrate having an arsenic atom concentration of at least 1 .times. 10.sup.-2 As atoms/total atoms in substrate, and ion implanting germanium into said substrate region. Even though the atomic radius of arsenic is very close to that of silicon -- the arsenic radius is only 0.5% smaller -- when high arsenic atom concentrations of at least 1 .times. 10.sup.-2 atoms/total atoms in the substrate are introduced in the substrate, and such high concentrations are only possible when arsenic is ion implanted, then atomic misfit dislocations will occur. The implanted germanium atoms compensate for the lattice strain in the silicon to minimize dislocations.

Abstract: A method of ion implantation into a semiconductor substrate which comprises forming a layer of an electrically insulative material, such as silicon dioxide, on the substrate over the region to be ion implanted. Then, a beam of ions having sufficient energy to pass through the layer of insulative material and to penetrate into the substrate is directed at a particular portion of the insulative layer. Before proceeding further, at least the upper half of the insulative layer, and preferably all of the upper portion of the insulative layer, in excess of a remaining thickness of 100A, is removed by etching. Then, the substrate is heated whereby the ions are driven further into the substrate to form the selected ion implanted region.