Abstract: Embodiments described herein involve a sensor test structure, comprising a substrate. A moat structure is configured to at least partially surround a resonating structure comprising at least one piezoelectric layer. An electrode comprises an electrode path. The electrode path crosses the moat region at least one time. Each moat crossing is configured to cause a change in resistance based on passivation failure of the moat structure.

Abstract: A method for manufacturing an acoustic device includes providing a substrate, providing a bottom electrode over the substrate, providing a sacrificial layer on the bottom electrode, patterning the bottom electrode and the sacrificial layer, polishing the sacrificial layer such that a portion of the sacrificial layer remains on the bottom electrode, and removing the remaining portion of the sacrificial layer via a cleaning process such that a surface roughness of the bottom electrode is maintained. By performing the polishing such that a portion of the sacrificial layer remains on the bottom electrode and subsequently removing that portion of the sacrificial layer via a cleaning process that maintains the surface roughness of the bottom electrode, the subsequent growth of a piezoelectric layer on the bottom electrode can be substantially improved.

Abstract: A fluidic device and a method of preventing isolation material from bleed-out therein is described herein. The fluidic device includes a bulk acoustic wave resonator structure defining at least one surface area region on which a functionalization material is disposed and the resonator structure includes a repelling area. The fluidic device also includes isolation material disposed on the resonator structure and away from the at least one surface area region. The repelling area is configured to prevent the isolation material from extending into the at least one surface area region. Further, an electronic board may be operably attached to the resonator structure and the isolation material may be disposed in a gap therebetween to electrically isolate electrical contacts and form a fluidic channel.

Abstract: A method for manufacturing an acoustic device includes providing a substrate, providing a bottom electrode over the substrate, providing a sacrificial layer on the bottom electrode, patterning the bottom electrode and the sacrificial layer, polishing the sacrificial layer such that a portion of the sacrificial layer remains on the bottom electrode, and removing the remaining portion of the sacrificial layer via a cleaning process such that a surface roughness of the bottom electrode is maintained. By performing the polishing such that a portion of the sacrificial layer remains on the bottom electrode and subsequently removing that portion of the sacrificial layer via a cleaning process that maintains the surface roughness of the bottom electrode, the subsequent growth of a piezoelectric layer on the bottom electrode can be substantially improved.

Abstract: Methods of depositing material onto substrate comprising: depositing a first seed material onto a wafer substrate, the wafer substrate having a face that defines a normal to the substrate, wherein the first seed material is deposited at a pressure of 10 to 20 mTorr to form a pre-seed layer on the wafer substrate, wherein the pre-seed layer has a surface roughness from 1 to 10 nm; depositing a second seed material onto at least a portion of the pre-seed layer at an off-normal incidence angle to form a seed layer on at least a portion of the pre-seed layer; and depositing a bulk piezoelectric material onto at least a portion of the seed layer to form a bulk piezoelectric layer having a c-axis tilt of 35 degrees or greater and a surface roughness of 4.5 nm or less. Structures and bulk acoustic wave resonators containing same are also included.

Abstract: Assemblies including a bulk acoustic wave acoustic sensor die having a first and an opposing second major surface, the die including a piezoelectric structure, a first and a second electrode electrically connected to the piezoelectric structure, and an active surface on the first major surface of the die; a printed circuit board (PCB), the PCB having a first major surface and an opposing second major surface and including a slot spanning from the first major surface to the second major surface through the PCB; a first bond electrically and mechanically connecting the die to the PCB; and a second bond electrically and mechanically connecting the die to the PCB, wherein the first and the second bonds are located on either side of the slot through the PCB and the active surface of the die is above the slot in the PCB.

Abstract: A method for manufacturing an acoustic device includes providing a substrate, providing a bottom electrode over the substrate, providing a sacrificial layer on the bottom electrode, patterning the bottom electrode and the sacrificial layer, polishing the sacrificial layer such that a portion of the sacrificial layer remains on the bottom electrode, and removing the remaining portion of the sacrificial layer via a cleaning process such that a surface roughness of the bottom electrode is maintained. By performing the polishing such that a portion of the sacrificial layer remains on the bottom electrode and subsequently removing that portion of the sacrificial layer via a cleaning process that maintains the surface roughness of the bottom electrode, the subsequent growth of a piezoelectric layer on the bottom electrode can be substantially improved.

Abstract: A fluidic device and a method of preventing isolation material from bleed-out therein is described herein. The fluidic device includes a bulk acoustic wave resonator structure defining at least one surface area region on which a functionalization material is disposed and the resonator structure includes a repelling area. The fluidic device also includes isolation material disposed on the resonator structure and away from the at least one surface area region. The repelling area is configured to prevent the isolation material from extending into the at least one surface area region. Further, an electronic board may be operably attached to the resonator structure and the isolation material may be disposed in a gap therebetween to electrically isolate electrical contacts and form a fluidic channel.

Abstract: The present disclosure relates to a wafer-level packaged (WLP) bulk acoustic wave (BAW) device, which includes a BAW resonator, a WLP enclosure, and an interconnect. The BAW resonator includes a piezoelectric layer with an opening, a bottom electrode lead underneath the opening, and an interface structure extending over the opening and in contact with the bottom electrode lead through the opening. The WLP enclosure includes a cap, an outer wall that extends from the cap toward the piezoelectric layer to form a cavity, and a through-WLP via that extends through the cap and the outer wall and is vertically aligned with the opening of the piezoelectric layer. A portion of the interface structure is exposed to the through-WLP via. The interconnect is formed in the through-WLP via and electrically connected to the interface structure.

Abstract: A fluidic sensing device includes a first sidewall, a second sidewall, a bulk acoustic resonator structure, a biomolecule, and a cover. A fluidic channel is defined between the first and second sidewalls. The bulk acoustic resonator structure has a surface defining at least a portion of the bottom of the channel. The biomolecule is attached to the surface of the bulk acoustic resonator that forms the bottom of the channel. The cover is disposed over the channel and the first and second sidewalls. A portion of the cover disposed over the channel defines at least a portion of the top of the channel and blocks UV radiation from being transmitted through the cover. A first portion of the cover disposed over the first sidewall is transparent to UV radiation, and a second portion of the cover disposed over the second sidewall is transparent to UV radiation.

Abstract: The present disclosure relates to a Wafer-level-packaged Bulk Acoustic Wave (BAW) device, which includes a bottom electrode, a top electrode, a top electrode lead, a piezoelectric layer sandwiched between the bottom and the top electrodes, an enclosure, and an anti-reflective layer (ARL). Herein, an active region for a resonator is formed where the bottom electrode and the top electrode overlap. The top electrode lead is over the piezoelectric layer and extending from the top electrode. The enclosure includes a cap and an outer wall that extends from the cap toward the piezoelectric layer to form a cavity. The top electrode resides in the cavity and a first portion of the outer wall resides over the top electrode lead. The ARL, with a reflectance less than 40% R, is between the first portion of the outer wall and the top electrode lead.

Abstract: The present disclosure relates to a wafer-level packaged (WLP) bulk acoustic wave (BAW) device, which includes a BAW resonator, a WLP enclosure, and an interconnect. The BAW resonator includes a piezoelectric layer with an opening, a bottom electrode lead underneath the opening, and an interface structure extending over the opening and in contact with the bottom electrode lead through the opening. The WLP enclosure includes a cap, an outer wall that extends from the cap toward the piezoelectric layer to form a cavity, and a through-WLP via that extends through the cap and the outer wall and is vertically aligned with the opening of the piezoelectric layer. A portion of the interface structure is exposed to the through-WLP via. The interconnect is formed in the through-WLP via and electrically connected to the interface structure.

Abstract: The present disclosure relates to a Wafer-Level-Packaged (WLP) Bulk Acoustic Wave (BAW) device that includes a BAW resonator, a WLP enclosure, and a surface mount connection structure. The BAW resonator includes a piezoelectric layer with an opening and a bottom electrode lead underneath the piezoelectric layer, such that a portion of the bottom electrode lead is exposed through the opening of the piezoelectric layer. The WLP enclosure includes a cap and an outer wall that extends from the cap toward the piezoelectric layer to form a cavity. The opening of the piezoelectric layer is outside the cavity. The surface mount connection structure covers a portion of a top surface of the cap and extends continuously over a side portion of the WLP enclosure and to the exposed portion of the bottom electrode lead through the opening of the piezoelectric layer.

Abstract: The present disclosure relates to a Wafer-Level-Packaged (WLP) Bulk Acoustic Wave (BAW) device that includes a BAW resonator, a WLP enclosure, and a surface mount connection structure. The BAW resonator includes a piezoelectric layer with an opening and a bottom electrode lead underneath the piezoelectric layer, such that a portion of the bottom electrode lead is exposed through the opening of the piezoelectric layer. The WLP enclosure includes a cap and an outer wall that extends from the cap toward the piezoelectric layer to form a cavity. The opening of the piezoelectric layer is outside the cavity. The surface mount connection structure covers a portion of a top surface of the cap and extends continuously over a side portion of the WLP enclosure and to the exposed portion of the bottom electrode lead through the opening of the piezoelectric layer.

Abstract: A fluidic sensing device includes a first sidewall, a second sidewall, a bulk acoustic resonator structure, a biomolecule, and a cover. A fluidic channel is defined between the first and second sidewalls. The bulk acoustic resonator structure has a surface defining at least a portion of the bottom of the channel. The biomolecule is attached to the surface of the bulk acoustic resonator that forms the bottom of the channel. The cover is disposed over the channel and the first and second sidewalls. A portion of the cover disposed over the channel defines at least a portion of the top of the channel and blocks UV radiation from being transmitted through the cover. A first portion of the cover disposed over the first sidewall is transparent to UV radiation, and a second portion of the cover disposed over the second sidewall is transparent to UV radiation.

Abstract: The present disclosure relates to a Wafer-level-packaged Bulk Acoustic Wave (BAW) device, which includes a bottom electrode, a top electrode, a top electrode lead, a piezoelectric layer sandwiched between the bottom and the top electrodes, an enclosure, and an anti-reflective layer (ARL). Herein, an active region for a resonator is formed where the bottom electrode and the top electrode overlap. The top electrode lead is over the piezoelectric layer and extending from the top electrode. The enclosure includes a cap and an outer wall that extends from the cap toward the piezoelectric layer to form a cavity. The top electrode resides in the cavity and a first portion of the outer wall resides over the top electrode lead. The ARL, with a reflectance less than 40% R, is between the first portion of the outer wall and the top electrode lead.

Abstract: A method and structure for uncovering captive devices in a bonded wafer assembly comprising a top wafer and a bottom wafer. One embodiment method includes forming a plurality of cuts in the top wafer and removing a segment of the top wafer defined by the plurality of cuts. The bottom wafer remains unsingulated after the removal of the segment.

Abstract: A method and structure for uncovering captive devices in a bonded wafer assembly comprising a top wafer and a bottom wafer. One embodiment method includes forming a plurality of cuts in the top wafer and removing a segment of the top wafer defined by the plurality of cuts. The bottom wafer remains unsingulated after the removal of the segment.

Abstract: A method and structure for uncovering captive devices in a bonded wafer assembly comprising a top wafer and a bottom wafer. One embodiment method includes forming a plurality of cuts in the top wafer and removing a segment of the top wafer defined by the plurality of cuts. The bottom wafer remains unsingulated after the removal of the segment.

Abstract: A method and structure for uncovering captive devices in a bonded wafer assembly comprising a top wafer and a bottom wafer. One embodiment method includes forming a plurality of cuts in the top wafer and removing a segment of the top wafer defined by the plurality of cuts. The bottom wafer remains unsingulated after the removal of the segment.