Abstract: An electro-absorption modulator, comprising: a substrate layer, including a silicon substrate and an oxide layer disposed on the silicon substrate; top-layer silicon, formed on the oxide layer, where a waveguide layer is formed on the top-layer silicon; a doping layer, including a first doping panel and a second doping panel, where a first-type light doping area is formed on the first doping panel, a second-type light doping area is formed on the second doping panel; and a modulation layer, disposed on the waveguide layer and connected in parallel to the PIN junction. For an incident beam with a specific wavelength, when a modulating electrical signal is reversely applied to the PIN junction, a light absorption coefficient of the modulation layer for the beam changes with the modulating electrical signal, and after the beam passes through a modulation area, optical power of the beam changes.

Abstract: An electro-absorption modulator, comprising: a substrate layer, including a silicon substrate and an oxide layer disposed on the silicon substrate; top-layer silicon, formed on the oxide layer, where a waveguide layer is formed on the top-layer silicon; a doping layer, including a first doping panel and a second doping panel, where a first-type light doping area is formed on the first doping panel, a second-type light doping area is formed on the second doping panel; and a modulation layer, disposed on the waveguide layer and connected in parallel to the PIN junction. For an incident beam with a specific wavelength, when a modulating electrical signal is reversely applied to the PIN junction, a light absorption coefficient of the modulation layer for the beam changes with the modulating electrical signal, and after the beam passes through a modulation area, optical power of the beam changes.