Abstract: Disclosed are a cloned pig expressing green fluorescent protein (GFP) and a cloned pig having a 1,3-galactosyltransferase (GT) gene knocked out. Also, the present invention discloses methods of producing such cloned pigs, comprising the steps of establishing a somatic cell line; preparing a GFP-transfected or GT gene knock-out nuclear donor cell; producing a transgenic nuclear transfer embryo using the nuclear donor cell and a recipient oocyte; and transplanting the transgenic nuclear transfer embryo into a surrogate mother pig. The cloned pig expressing GFP of the present invention is useful for large-scale production of an animal disease model, and the GT gene knock-out cloned pig can be used as a organ donor allowing xenotransplantation in humans without hyperacute immune rejection.

Abstract: A composition for an intergranular insulation type semiconductive ceramic capacitor essentially consisting of 1 mole of SrTiO.sub.3, 0.005 mole to 0.012 mole of TiO.sub.2, and 0.003 mole to 0.006 mole of a quinquevalent ion oxide selected from a group consisting of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, Sb.sub.2 O.sub.5 and the mixture thereof. An intergranular insulation type semiconductive ceramic capacitor is made by sintering a ceramic body made of the composition at a temperature of not less than 1,500.degree. C. in the atmosphere, to form a sintered body having a liquid phase at its grain boundaries, and cooling the sintered body so that the liquid phase forms an intergranular insulating layer. The intergranular insulation type semiconductive ceramic capacitor exhibits a dielectric constant of not less than 40,000 and an insulation resistance of not less than 10.sup.9 .OMEGA..

Abstract: An intercrystalline semiconductive ceramic capacitor having a dielectric ceramic body formed by sintering a dielectric ceramic having a composition essentially consisting of a major component comprised of 1 mole SrTiO.sub.3 and a minor component comprised of 0.01 to 0.04 mole TiO.sub.2, 0.001 to 0.010 mole Dy.sub.2 O.sub.3, 0.001 to 0.007 mole ZnO, 0.002 to 0.012 mole MnO.sub.2 and 0.01 to 0.07 mole Al.sub.2 O.sub.3 at a temperature of 1,400.degree. to 1,470.degree. C. in a reducing atmosphere, an intercrystalline insulation layer formed by coating an insulation paste over both surfaces of the dielectric ceramic body and heat treating the resultant body, and external electrodes formed on the both surface of the dielectric ceramic body, respectively.