Abstract: Disclosed is a method for patterning a chemical amplified photoresist which improves resolution by adjusting a diffusion direction of photo acid. The method for patterning a chemical amplified photoresist includes the steps of depositing a chemical amplified photoresist on an etching target layer, selectively exposing the chemical amplified photoresist to generate photo acid on a surface of the exposed chemical amplified photoresist, diffusing the photo acid in only one direction by performing PEB process on condition that electric field is applied to the chemical amplified photoresist, and patterning the chemical amplified photoresist by developing process to remove only a portion where the photo acid is diffused.

Abstract: A method for etching a semiconductor device suitable for forming micron contact hole having a size of less than limit resolution power of exposure equipments is disclosed, including coating a layer for an etch mask on an etched object layer; selectively patterning the layer to form an open area; and swelling side part of the patterned layer and forming the etch mask.

Abstract: Phase-shifting mask which minimizes thickness and phase variations of a phase-shifting layer, and the method for manufacturing the same, the phase-shifting mask including a transparent substrate, a plurality of light-shielding layers formed in the transparent substrate; and a plurality of phase-shifting layers each formed on the transparent substrate between the light-shielding layers; and the method including the steps of providing a transparent substrate, defining transparent regions and light-shielding regions so as to form a plurality of trenches, channels or recesses in each of the light-shielding regions of the transparent substrate, forming each of a plurality of light-shielding layers in each of the plurality of trenches, channels or recesses, and forming a phase-shifting layer on the transparent substrate at least between a pair of the light-shielding layers.

Abstract: A sputtering deposition apparatus and method wherein a deposition material is sputtered from a target, the sputtered deposition material is ionized, and a thin film of the ionized deposition material is deposited onto a wafer.