Abstract: A semiconductor device includes a substrate including an active pattern; a channel pattern on the active pattern, the channel pattern including a plurality of semiconductor patterns, which are stacked to be spaced apart from each other; a source/drain pattern connected to the plurality of semiconductor patterns; a gate electrode on the plurality of semiconductor patterns; and a blocking layer between the source/drain pattern and the active pattern, wherein the source/drain pattern includes a protruding side surface protruding toward the semiconductor patterns, the blocking layer includes silicon-germanium (SiGe), and a germanium concentration of the blocking layer is higher than a germanium concentration of the source/drain pattern.

Abstract: A semiconductor device including an active region extending in a first horizontal direction, a nanosheet stack apart from the active region, a plurality of gate structures extending in a second horizontal direction and including a plurality of gate electrodes, a plurality of source/drain regions arranged on sidewalls of the gate structures, and a device isolation layer extending in a vertical direction, wherein the plurality of gate structures include a first gate structure in which a source/drain region is arranged on one sidewall and the device isolation layer is arranged on the other sidewall, and a second gate structure in which source/drain regions are arranged on both sidewalls, wherein the plurality of gate electrodes of the first gate structure include a main gate electrode positioned at the uppermost end and a plurality of sub-gate electrodes, and an internal spacer is between the device isolation layer and the plurality of sub-gate electrodes.