Patents by Inventor Byeong-Hoon Cho
Byeong-Hoon Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8698144Abstract: A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.Type: GrantFiled: March 25, 2010Date of Patent: April 15, 2014Assignee: Samsung Display Co., Ltd.Inventors: Kyung-Sook Jeon, Kap-Soo Yoon, Woong-Kwon Kim, Sang-Youn Han, Jun-Ho Song, Sung-Hoon Yang, Byeong-Hoon Cho, Dae-Cheol Kim, Ki-Hun Jeong, Jung-Suk Bang
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Patent number: 8598587Abstract: An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.Type: GrantFiled: August 12, 2011Date of Patent: December 3, 2013Assignee: Samsung Display Co., Ltd.Inventors: Yun Jong Yeo, Hong-Kee Chin, Byeong Hoon Cho, Ki-Hun Jeong, Jung Suk Bang, Woong Kwon Kim, Sung Ryul Kim, Dae Cheol Kim, Kun-Wook Han
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Patent number: 8581253Abstract: A display substrate includes a first light blocking pattern formed on a base substrate, a first switching element, a second light blocking pattern formed on the base substrate, and a first sensing element. The first light blocking pattern is configured to block visible light and transmit infrared light. The first switching element includes a first semiconductor pattern, a first source electrode, a first drain electrode, and a first gate electrode. The second light blocking pattern is configured to block the visible light and transmit the infrared light. The first sensing element is configured to detect the infrared light, and includes a second semiconductor pattern, a second source electrode, a second drain electrode, and a second gate electrode.Type: GrantFiled: October 14, 2010Date of Patent: November 12, 2013Assignee: Samsung Display Co., Ltd.Inventors: Jung-Suk Bang, Byeong-Hoon Cho, Sung-Hoon Yang, Suk-Won Jung, Ki-Hun Jeong
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Patent number: 8325302Abstract: In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor.Type: GrantFiled: March 12, 2010Date of Patent: December 4, 2012Assignee: Samsung Display Co., Ltd.Inventors: Byeong-Hoon Cho, Sung-Hoon Yang, Kap-Soo Yoon, Ki-Hun Jeong, Kyung-Sook Jeon, Woong-Kwon Kim, Sang-Youn Han, Dae-Cheol Kim, Jung-Suk Bang
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Patent number: 8294837Abstract: A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor.Type: GrantFiled: October 5, 2010Date of Patent: October 23, 2012Assignee: Samsung Display Co., Ltd.Inventors: Woong-Kwon Kim, Dae-Cheol Kim, Dong-Kwon Kim, Ki-Hun Jeong, Sung-Hoon Yang, Sang-Youn Han, Suk-Won Jung, Byeong-Hoon Cho, Kyung-Sook Jeon, Seung-Mi Seo, Jung-Suk Bang, Mi-Seon Seo
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Publication number: 20120248452Abstract: An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.Type: ApplicationFiled: August 12, 2011Publication date: October 4, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun Jong YEO, Hong-Kee CHIN, Byeong Hoon CHO, Ki-Hun JEONG, Jung Suk BANG, Woong Kwon KIM, Sung Ryul KIM, Dae Cheol KIM, Kun-Wook HAN
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Publication number: 20120228505Abstract: An optical sensor includes a visible light sensor includes a visible light sensing transistor and an infrared light sensor includes an infrared light sensing transistor, wherein the visible light sensing transistor receives a first driving voltage through a first driving voltage line, the infrared light sensing transistor receives a second driving voltage through a second driving voltage line, and the visible light sensing transistor and the infrared light sensing transistor receive a reference voltage through a reference voltage line.Type: ApplicationFiled: July 29, 2011Publication date: September 13, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kun-Wook HAN, Sung-Ryul KIM, Woong-Kwon KIM, Dae-Cheol KIM, Ki-Hun JEONG, Jung-Suk BANG, Yun-Jong YEO, Byeong-Hoon CHO, Hong-Kee CHIN, Sung-jin MUN
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Publication number: 20120188204Abstract: A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes.Type: ApplicationFiled: September 23, 2011Publication date: July 26, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-Jong YEO, Byeong-Hoon CHO, Ki-Hun JEONG, Hong-Kee CHIN, Jung-Suk BANG, Woong-Kwon KIM, Sung-Ryul KIM, Hee-Joon KIM, Dae-Cheol KIM, Kun-Wook HAN
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Publication number: 20120138929Abstract: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.Type: ApplicationFiled: July 13, 2011Publication date: June 7, 2012Inventors: Suk Won JUNG, Byeong Hoon CHO, Sung Hoon YANG, Woong Kwon KIM, Sang Youn HAN, Dae Cheol KIM, Ki-Hun JEONG, Kyung-Sook JEON, Seung Mi SEO, Jung-Suk BANG, Kun-Wook HAN
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Patent number: 8174015Abstract: A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer.Type: GrantFiled: April 16, 2010Date of Patent: May 8, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Ki-Hun Jeong, Byeong-Hoon Cho, Jung-Suk Bang, Sang-Youn Han, Woong-Kwon Kim, Sung-Hoon Yang, Suk Won Jung, Dae-Cheol Kim, Kyung-Sook Jeon, Seung Mi Seo
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Publication number: 20110261040Abstract: An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage.Type: ApplicationFiled: April 20, 2011Publication date: October 27, 2011Inventors: Sang-Youn HAN, Dong-Kwon KIM, Kyung-Sook JEON, Sung-Hoon YANG, Joo-Han KIM, Woong-Kwon KIM, Suk-Won JUNG, Byeong-Hoon CHO, Dae-Cheol KIM, Hui-Sung LEE, Ki-Hun JEONG, Seung-Mi SEO, Jung-Suk BANG, Kun-Wook HAN, Mi-Seon SEO
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Publication number: 20110169000Abstract: A display substrate includes a first light blocking pattern formed on a base substrate, a first switching element, a second light blocking pattern formed on the base substrate, and a first sensing element. The first light blocking pattern is configured to block visible light and transmit infrared light. The first switching element includes a first semiconductor pattern, a first source electrode, a first drain electrode, and a first gate electrode. The second light blocking pattern is configured to block the visible light and transmit the infrared light. The first sensing element is configured to detect the infrared light, and includes a second semiconductor pattern, a second source electrode, a second drain electrode, and a second gate electrode.Type: ApplicationFiled: October 14, 2010Publication date: July 14, 2011Inventors: JUNG-SUK BANG, Byeong-Hoon Cho, Sung-Hoon Yang, Suk-Won Jung, Ki-Hun Jeong
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Publication number: 20110147746Abstract: A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode.Type: ApplicationFiled: October 6, 2010Publication date: June 23, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Woong-Kwon KIM, Jung-Suk BANG, Sung-Hoon YANG, Sang-Youn HAN, Suk-Won JUNG, Byeong-Hoon CHO, Dae-Cheol KIM, Ki-Hun JEONG, Kyung-Sook JEON, Seung-Mi SEO, Kun-Wook HAN, Mi-Seon SEO
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Publication number: 20110090420Abstract: A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor.Type: ApplicationFiled: October 5, 2010Publication date: April 21, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Woong-Kwon KIM, Dae-Cheol KIM, Dong-Kwon KIM, Ki-Hun JEONG, Sung-Hoon YANG, Sang-Youn HAN, Suk-Won JUNG, Byeong-Hoon CHO, Kyung-Sook JEON, Seung-Mi SEO, Jung-Suk BANG, Mi-Seon SEO
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Publication number: 20110057189Abstract: A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer.Type: ApplicationFiled: April 16, 2010Publication date: March 10, 2011Applicant: Samsung Electronics Co., Ltd.Inventors: Ki-Hun JEONG, Byeong-Hoon Cho, Jung-Suk Bang, Sang-Youn Han, Woong-Kwon Kim, Sung-Hoon Yang, Suk Won Jung, Dae-Cheol Kim, Kyung-Sook Jeon, Seung Mi Seo
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Publication number: 20110032461Abstract: In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor.Type: ApplicationFiled: March 12, 2010Publication date: February 10, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byeong-Hoon Cho, Sung-Hoon Yang, Kap-Soo Yoon, Ki-Hun Jeong, Kyung-Sook Jeon, Woong-Kwon Kim, Sang-Youn Han, Dae-Cheol Kim, Jung-Suk Bang
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Publication number: 20110012115Abstract: A display panel that includes: a substrate, a sensing transistor disposed on the substrate, and a readout transistor connected to the sensing transistor and transmitting a detecting signal is presented. The sensing transistor includes a semiconductor layer disposed on the upper substrate, a source electrode and a drain electrode disposed on the semiconductor layer, and a gate electrode overlapping the semiconductor layer on the source electrode and the drain electrode. Accordingly, in a display device and a manufacturing method thereof, an infrared sensing transistor, a visible light sensing transistor, and a readout transistor are simultaneously formed with a top gate structure such that the number of manufacturing processes and the manufacturing cost may be reduced.Type: ApplicationFiled: March 25, 2010Publication date: January 20, 2011Inventors: Kyung-Sook Jeon, Kap-Soo Yoon, Woong-Kwon Kim, Sang-Youn Han, Jun-Ho Song, Sung-Hoon Yang, Byeong-Hoon Cho, Dae-Cheol Kim, Ki-Hun Jeong, Jung-Suk Bang
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Publication number: 20100270552Abstract: A protrusion of dry-etched pattern of a thin film transistor substrate generated due to a difference between isotropy of wet etching and anisotropy of dry etching is removed by forming a plating part on a surface of the wet etched pattern through an electroless plating method. If the plating part is formed on a data pattern layer of the substrate, the width or the thickness of the data pattern layer may be increased without loss of aperture ratio, the channel length of the semiconductor layer may be reduced under the limit according to the stepper resolution and the protrusion part of the semiconductor layer may be removed. As a result, the aperture ratio may be increased, the resistance may be reduced, and the driving margin may be increased due to rising of the ion current. Furthermore, the so-called water-fall noise phenomenon may be eliminated.Type: ApplicationFiled: September 30, 2009Publication date: October 28, 2010Inventors: Ki-Yong Song, Sung-Haeng Cho, Jae-Hong Kim, Sung-Hen Cho, Yong-Mo Choi, Hyung-Jun Kim, Sung-Ryul Kim, Byeong-Hoon Cho, O-Sung Seo, Seong-Hun Kim