Abstract: An armrest touch screen device with a water discharge function applied to a vehicle according to the present disclosure includes one or more of: a water discharge part defined by a touch screen panel and a screen body; a fitting coupling part defined by the touch screen panel and the screen body; a bolting fastening part defined by the touch screen panel, the screen body, a circuit board, and a screen casing; and a hook engaging part defined by the screen body and a screen casing. Accordingly, it is possible to prevent water permeation into the touch screen panel, reduce the weight and the material costs by reducing the number of screws, implement the robust touch screen design, and minimize the assembly dimension error.

Abstract: Disclosed is a headrest having a speaker, the headrest including: a headrest frame having a rear surface to which a driving module is coupled so that the headrest frame is movable forwards, rearwards, or vertically in response to operation of the driving module, the headrest frame having a front surface formed with a speaker mounting space recessed rearwards; a speaker, inserted and fastened into the speaker mounting space in the headrest frame, provided with an output portion facing forwards and configured to output sound; a foam pad mounted on the front surface of the headrest frame so as to cover both the headrest frame and the speaker; a covering configured to cover a front surface of the foam pad and forming a front exterior of the headrest; and a headrest stay configured to connect the headrest frame to a seat.

Abstract: Disclosed is a headrest having a speaker, the headrest including: a headrest frame having a rear surface to which a driving module is coupled so that the headrest frame is movable forwards, rearwards, or vertically in response to operation of the driving module, the headrest frame having a front surface formed with a mounting space recessed rearwards; a speaker, inserted into the mounting space in the headrest frame, provided with an output portion facing forwards and outputting sound, the speaker having a rear side closed by the headrest frame; a foam pad, mounted on the front surface of the headrest frame so as to cover the headrest frame and the speaker, having formed therein a first through hole outputting sound forwards at a position corresponding to the output portion; and a covering configured to cover the front surface of the foam pad and forming the front exterior of the headrest.

Abstract: A method of measuring overlay, including forming an active region on a cell region of a substrate and forming at least one overlay key structure on a scribe lane region of the substrate, forming a first mask pattern on the active region and forming a first sub-pattern on the overlay key structure, checking an alignment using the first sub-pattern, performing a first ion implantation process into the substrate, forming a second mask pattern on the active region and forming a second sub-pattern on the overlay key structure, checking the alignment using the second sub-pattern, and performing a second ion implantation process into the substrate, wherein a second width of the second sub-pattern is greater than a first width of the first sub-pattern.

Abstract: Provided is an overlay mark. The overlay mark comprises a substrate, a lower overlay in the substrate, a pattern layer on the substrate, and an upper overlay defining an opening on the pattern layer. The lower overlay does not overlap the upper overlay in a thickness direction of the substrate.

Abstract: Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern.

Abstract: Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof.

Abstract: Provided is a method of forming patterns of a semiconductor device, whereby patterns having various widths can be simultaneously formed, and pattern density can be doubled by a double patterning process in a portion of the semiconductor device. In the method of forming patterns of a semiconductor device, a first mold mask pattern and a second mold mask patter having different widths are formed on a substrate. A pair of first spacers covering both sidewalls of the first mold mask pattern and a pair of second spacers covering both sidewalls of the second mold mask pattern are formed. The first mold mask pattern and the second mold mask pattern are removed, and a wide-width mask pattern covering the second spacer is formed. A lower layer is etched using the first spacers, the second spacers, and the wide-width mask pattern as an etch mask.

Abstract: Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern.

Abstract: Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof.

Abstract: Provided is a method of forming patterns of a semiconductor device, whereby patterns having various widths can be simultaneously formed, and pattern density can be doubled by a double patterning process in a portion of the semiconductor device. In the method of forming patterns of a semiconductor device, a first mold mask pattern and a second mold mask patter having different widths are formed on a substrate. A pair of first spacers covering both sidewalls of the first mold mask pattern and a pair of second spacers covering both sidewalls of the second mold mask pattern are formed. The first mold mask pattern and the second mold mask pattern are removed, and a wide-width mask pattern covering the second spacer is formed. A lower layer is etched using the first spacers, the second spacers, and the wide-width mask pattern as an etch mask.