Patents by Inventor Byeong Hyeok KIM

Byeong Hyeok KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ZnO film structure and method of forming the same
    Patent number: 9018626
    Abstract: Disclosed herein are a ZnO film structure and a method of forming the same. Dislocation density of a ZnO film grown through epitaxial lateral overgrowth (ELOG) is minimized. In order to block a chemical reaction between the ZnO film and a mask layer at the time of performing the ELOG, a material of the mask layer is AlF3, NaF2, SrF, or MgF2. Therefore, the chemical reaction between ZnO and the mask layer is blocked and a transfer of dislocation from a substrate is also blocked.
    Type: Grant
    Filed: December 26, 2013
    Date of Patent: April 28, 2015
    Assignee: Gwangju Institute of Science and Technology
    Inventors: Seong-Ju Park, Yong Seok Choi, Jang-Won Kang, Byeong Hyeok Kim
  • ZnO FILM STRUCTURE AND METHOD OF FORMING THE SAME
    Publication number: 20140361288
    Abstract: Disclosed herein are a ZnO film structure and a method of forming the same. Dislocation density of a ZnO film grown through epitaxial lateral overgrowth (ELOG) is minimized. In order to block a chemical reaction between the ZnO film and a mask layer at the time of performing the ELOG, a material of the mask layer is AlF3, NaF2, SrF, or MgF2. Therefore, the chemical reaction between ZnO and the mask layer is blocked and a transfer of dislocation from a substrate is also blocked.
    Type: Application
    Filed: December 26, 2013
    Publication date: December 11, 2014
    Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Seong-Ju PARK, Yong Seok CHOI, Jang-Won KANG, Byeong Hyeok KIM