Abstract: The present invention relates to a method for preparing graphene using a novel block copolymer. The present invention has features that, by using the block copolymer to mediate graphene that is hydrophobic and a solvent of a feed solution that is hydrophilic, the exfoliation efficiency of graphene as well as the dispersion stability thereof can be increased during high-pressure homogenization.

Abstract: The present invention relates to a method for preparing graphene using a novel block copolymer. The present invention has features that, by using the block copolymer to mediate graphene that is hydrophobic and a solvent of a feed solution that is hydrophilic, the exfoliation efficiency of graphene as well as the dispersion stability thereof can be increased during high-pressure homogenization.

Abstract: The present invention relates to a method for preparing graphene using a novel block copolymer. The present invention has features that, by using the block copolymer to mediate graphene that is hydrophobic and a solvent of a feed solution that is hydrophilic, the exfoliation efficiency of graphene as well as the dispersion stability thereof can be increased during high-pressure homogenization.

Abstract: The present invention relates to a method for preparing graphene using a novel block copolymer. The present invention has features that, by using the block copolymer to mediate graphene that is hydrophobic and a solvent of a feed solution that is hydrophilic, the exfoliation efficiency of graphene as well as the dispersion stability thereof can be increased during high-pressure homogenization.

Abstract: Provided is a method of forming a floating gate, a non-volatile memory device using the same, and a method of fabricating the non-volatile memory device, in which nano-crystals of nano-size whose density and size can be easily adjusted, are synthesized using micelles so as to be used as the floating gate of the non-volatile memory device. The floating gate is fabricated by forming a tunnel oxide film on the semiconductor substrate, coating a gate formation solution on the tunnel oxide film in which the gate formation solution includes micelle templates into which precursors capable of synthesizing metallic salts in nano-structures formed by a self-assembly method are introduced, and arranging the metallic salts on the tunnel oxide film by removing the micelle templates, to thereby form the floating gate.

Abstract: Provided is a charge trapping layer which has excellent memory characteristics, a method of forming the charge trapping layer, a nonvolatile memory device using the charge trapping layer, and a method of fabricating the nonvolatile memory device, in which a hybrid nanoparticle which is obtained by mixing a nanoparticle having an excellent programming characteristic with a nanoparticle having an excellent erasing characteristic is used as the charge trapping layer. The charge trapping layer for use in the nanoparticle is discontinuously formed between a tunneling oxide film and a control oxide film, and includes at least two different kinds of numerous nanoparticles.

Abstract: Provided is a method of forming a floating gate, a non-volatile memory device using the same, and a method of fabricating the non-volatile memory device, in which nano-crystals of nano-size whose density and size can be easily adjusted, are synthesized using micelles so as to be used as the floating gate of the non-volatile memory device. The floating gate is fabricated by forming a tunnel oxide film on the semiconductor substrate, coating a gate formation solution on the tunnel oxide film in which the gate formation solution includes micelle templates into which precursors capable of synthesizing metallic salts in nano-structures formed by a self-assembly method are introduced, and arranging the metallic salts on the tunnel oxide film by removing the micelle templates, to thereby form the floating gate.