Abstract: The present disclosure relates to a method of synthesizing composites for removing heavy metals, including: preparing hollow hydroxyapatite particles including a functional group; preparing a composite in which magnetic oxide nanoparticles are combined on the hollow hydroxyapatite; and preparing a composite of hollow hydroxyapatite and metal particles by performing reduction annealing to the composite.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method thereof.

Abstract: A light emitting structure that includes: first and second semiconductor layers having aluminum; and an active layer having aluminum between the first and the second semiconductor layers, the intensity exhibited in the second semiconductor layer range between a first minimum intensity of the secondary ions and a first maximum intensity of the secondary ions, and the intensity exhibited in the first semiconductor layer include a second minimum intensity of the secondary ions, the second minimum intensity being different from the first minimum intensity, and at a first prescribed distance from a surface of the second semiconductor layer, the second semiconductor layer exhibits a first intermediate intensity of the secondary ions corresponding to the second minimum intensity, which is between the first minimum intensity and the first maximum intensity, wherein the first maximum intensity occurs at a second prescribed distance from the first prescribed distance, wherein a ratio of the second prescribed distance (

Abstract: The present invention relates to a method which can effectively remove perovskite light absorbers, hole transport layers, metal electrodes, and the like by immersing a waste perovskite-based photoelectric conversion element module in a cleaning solution under predetermined conditions. The present invention can recover a substrate from the waste module and manufacture a photoelectric conversion element having a photoelectric conversion efficiency level comparable to the initially high level again, using the same.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.

Abstract: The present disclosure relates to a resistive random access memory device and a preparing method thereof.

Abstract: The present disclosure relates to a method of fabricating a perovskite solar cell, including: forming an electron transport layer on a substrate; forming a light absorbing layer containing a perovskite material on the electron transport layer; forming a hole transport layer on the light absorbing layer; and forming an electrode on the hole transport layer. Herein, the forming of the light absorbing layer is performed by impregnating the substrate on which the electron transport layer is formed in a nonpolar solvent and performing a heat treatment thereto.

Abstract: The present invention relates to a method which can effectively remove perovskite light absorbers, hole transport layers, metal electrodes, and the like by immersing a waste perovskite-based photoelectric conversion element module in a cleaning solution under predetermined conditions. The present invention can recover a substrate from the waste module and manufacture a photoelectric conversion element having a photoelectric conversion efficiency level comparable to the initially high level again, using the same.

Abstract: The present disclosure relates to a method of synthesizing composites for removing heavy metals, including: preparing hollow hydroxyapatite particles including a functional group; preparing a composite in which magnetic oxide nanoparticles are combined on the hollow hydroxyapatite; and preparing a composite of hollow hydroxyapatite and metal particles by performing reduction annealing to the composite.

Abstract: A light emitting structure that includes: first and second semiconductor layers having aluminum; and an active layer having aluminum between the first and the second semiconductor layers, the intensity exhibited in the second semiconductor layer range between a first minimum intensity of the secondary ions and a first maximum intensity of the secondary ions, and the intensity exhibited in the first semiconductor layer include a second minimum intensity of the secondary ions, the second minimum intensity being different from the first minimum intensity, and at a first prescribed distance from a surface of the second semiconductor layer, the second semiconductor layer exhibits a first intermediate intensity of the secondary ions corresponding to the second minimum intensity, which is between the first minimum intensity and the first maximum intensity, wherein the first maximum intensity occurs at a second prescribed distance from the first prescribed distance, wherein a ratio of the second prescribed distance (