Abstract: The present disclosure discloses a substrate heat-treating apparatus including a process chamber in which a flat substrate to be heat treated is placed, the process chamber comprising a beam transmitting plate placed below the flat substrate and an infrared transmitting plate placed above the flat substrate; a beam irradiating module for irradiating a VCSEL beam having a single wavelength to a lower surface of the flat substrate through the beam transmitting plate; and an temperature measuring module configured to measure the laser beam reflected from the lower surface or an upper surface the flat substrate, thereby measuring the temperature of the flat substrate.

Abstract: The present disclosure discloses a substrate heat-treating apparatus including a process chamber in which a flat substrate to be heat treated is placed, the process chamber comprising a beam transmitting plate placed below the flat substrate and an infrared transmitting plate placed above the flat substrate; a beam irradiating module for irradiating a VCSEL beam having a single wavelength to a lower surface of the flat substrate through the beam transmitting plate; and an emissivity measuring configured to measure the laser beam reflected from the lower surface or an upper surface the flat substrate, thereby measuring the emissivity of the flat substrate.

Abstract: A semiconductor manufacturing apparatus may include: a pickup unit configured to pick up a chip in a first region of the semiconductor manufacturing apparatus; a bonding head configured to receive the picked-up chip and configured to move from the first region to a top of a circuit board in a second region of the semiconductor manufacturing apparatus; and/or an optical unit configured to detect a bonding position on the circuit board while moving from the first region to the second region. A semiconductor manufacturing apparatus may include: a bonding head including a heater for heating a chip and bonding the chip onto a circuit board; and/or a cooling block, adjacent to the heater, through which cooling liquid flows. The cooling liquid may be removed from the cooling block while the heater generates heat. The cooling liquid may be supplied to the cooling block while the heater is cooled.

Abstract: A semiconductor manufacturing apparatus may include: a pickup unit configured to pick up a chip in a first region of the semiconductor manufacturing apparatus; a bonding head configured to receive the picked-up chip and configured to move from the first region to a top of a circuit board in a second region of the semiconductor manufacturing apparatus; and/or an optical unit configured to detect a bonding position on the circuit board while moving from the first region to the second region. A semiconductor manufacturing apparatus may include: a bonding head including a heater for heating a chip and bonding the chip onto a circuit board; and/or a cooling block, adjacent to the heater, through which cooling liquid flows. The cooling liquid may be removed from the cooling block while the heater generates heat. The cooling liquid may be supplied to the cooling block while the heater is cooled.

Abstract: An apparatus for semiconductor die bonding includes a first bonding head and a second bonding head configured to respectively pickup a first semiconductor chip and a second semiconductor chip located at a pickup point. The apparatus for semiconductor die bonding may also include a first transfer device configured to transfer the first bonding head from the pickup point to a bonding point located on a substrate along a transfer path. The first transfer device may further be configured to return to the pickup point along a first return path after the first semiconductor chip is bonded to the substrate. Also, the apparatus for semiconductor die bonding may include a second transfer device configured to transfer the second bonding head from the pickup point to the bonding point located on the substrate along the transfer path. The second transfer device may further be configured to return to the pickup point along a second return path after the second semiconductor chip is bonded to the substrate.