Abstract: A method of forming a portion of a gate-all-around field-effect transistor includes performing a selective deposition process to form selective cap layers at bottoms of contact trenches formed within portions of a substrate isolated by shallow trench isolations (STIs), wherein the contact trenches each interface with an S/D epitaxial (epi) layer with an extension region, performing a substrate angled etch process to etch sidewalls of the contact trenches, enlarging top critical dimension (CD) of the contact trenches, performing a substrate selective removal plasma (SRP) etch process to isotropically etch the substrate within the contact trenches, performing a recess fill process to fill the contact trenches with dielectric layers, performing an inter-layer dielectric (ILD) recess process to partially remove the substrate between the dielectric layers within the contact trenches and form an ILD recess, and performing a substrate isotropic etch process to partially remove the substrate within the ILD recess.

Abstract: Disclosed is an apparatus for processing a substrate, the apparatus including: a chamber for forming a processing space in which a processing process for a substrate is performed therein by a combination of a first body and a second body; and a driver for moving any one of the first body or the second body relative to the other such that a relative position between the first body and the second body is changeable between a sealed position at which the processing space is sealed from the outside and an open position at which the processing space is opened, in which the first body is formed with a first protrusion on a face that is in contact with the second body, the second body is formed with a first receiving portion, and the first protrusion is provided to be inserted into the first receiving portion when the first body and the second body are at the sealed position.

Abstract: Disclosed is a method for patterning a chemical amplified photoresist which improves resolution by adjusting a diffusion direction of photo acid. The method for patterning a chemical amplified photoresist includes the steps of depositing a chemical amplified photoresist on an etching target layer, selectively exposing the chemical amplified photoresist to generate photo acid on a surface of the exposed chemical amplified photoresist, diffusing the photo acid in only one direction by performing PEB process on condition that electric field is applied to the chemical amplified photoresist, and patterning the chemical amplified photoresist by developing process to remove only a portion where the photo acid is diffused.

Abstract: A method for etching a semiconductor device suitable for forming micron contact hole having a size of less than limit resolution power of exposure equipments is disclosed, including coating a layer for an etch mask on an etched object layer; selectively patterning the layer to form an open area; and swelling side part of the patterned layer and forming the etch mask.

Abstract: Phase-shifting mask which minimizes thickness and phase variations of a phase-shifting layer, and the method for manufacturing the same, the phase-shifting mask including a transparent substrate, a plurality of light-shielding layers formed in the transparent substrate; and a plurality of phase-shifting layers each formed on the transparent substrate between the light-shielding layers; and the method including the steps of providing a transparent substrate, defining transparent regions and light-shielding regions so as to form a plurality of trenches, channels or recesses in each of the light-shielding regions of the transparent substrate, forming each of a plurality of light-shielding layers in each of the plurality of trenches, channels or recesses, and forming a phase-shifting layer on the transparent substrate at least between a pair of the light-shielding layers.

Abstract: A sputtering deposition apparatus and method wherein a deposition material is sputtered from a target, the sputtered deposition material is ionized, and a thin film of the ionized deposition material is deposited onto a wafer.