Abstract: A resistive memory device includes a plurality of first conductive lines in a first area and a second area on a substrate, a plurality of second conductive lines in the first area and the second area, the plurality of second conductive lines being apart from the plurality of first conductive lines in a vertical direction, and a plurality of memory cells connected to the first and second conductive lines at a plurality of intersections between the plurality of first and second conductive lines in the first area and the second area. The plurality of memory cells include an active memory cell in the first area and a dummy memory cell in the second area. The active memory cell including a first resistive memory pattern having a first width and the dummy memory cell including a second resistive memory pattern having a second width greater than the first width.

Abstract: A plasma lighting system includes a magnetron configured to generate microwaves, and a bulb in which a dose for generation of light using the microwaves and at least one metallic material for generation of thermal electrons are received. The metallic material reduces an electric field intensity required for electric discharge by discharging thermal electrons. In this way, the plasma lighting system reduces the time it takes to turn the light back on after the light is turned off.

Abstract: A plasma lighting system includes a magnetron configured to generate microwaves, and a bulb filled with a main dose and an additive dose. The main dose and the additive dose generate light under the influence of microwaves and have the maximum intensities of respective intrinsic wavelengths at different wavelengths. A waveguide is configured to guide the microwaves generated by the magnetron to the bulb. A motor is configured to rotate the bulb. A sensor is configured to sense the intensity of light having a specific wavelength emitted from the bulb. A controller is connected to the motor. The controller adjusts the Revolutions Per Minute (RPM) of the bulb based on the intensity of light having the specific wavelength sensed by the sensor. With this arrangement, a Color Rendering Index (CRI) of the plasma lighting system may be adjusted during operation.

Abstract: The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.

Abstract: A plasma lighting system includes a magnetron configured to generate microwaves, a bulb filled with a main dose and an additive dose, wherein the main dose and the additive dose generate light under the influence of microwaves and have the maximum intensities of respective intrinsic wavelengths at different wavelengths, a waveguide configured to guide the microwaves generated by the magnetron to the bulb, a motor configured to rotate the bulb, a sensor configured to sense the intensity of light having a specific wavelength emitted from the bulb, and a controller connected to the motor, wherein the controller adjusts Revolutions Per Minute (RPM) of the bulb based on the intensity of light having the specific wavelength sensed by the sensor.

Abstract: A plasma lighting system includes a magnetron configured to generate microwaves, and a bulb in which a dose for generation of light using the microwaves and at least one metallic material for generation of thermal electrons are received.

Abstract: An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

Abstract: An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

Abstract: An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

Abstract: The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.

Abstract: The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.

Abstract: The present invention provides antifuse structures having an integrated heating element and methods of programming the same, the antifuse structures comprising first and second conductors and a dielectric layer formed between the conductors, where one or both of the conductors functions as both a conventional antifuse conductor and as a heating element for directly heating the antifuse dielectric layer during programming.

Abstract: An integrated eFUSE device is formed by forming a silicon “floating beam” on air, whereupon the fusible portion of the eFUSE device resides. This beam extends between two larger, supporting terminal structures. “Undercutting” techniques are employed whereby a structure is formed atop a buried layer, and that buried layer is removed by selective etching. Whereby a “floating” silicide eFUSE conductor is formed on a silicon beam structure. In its initial state, the eFUSE silicide is highly conductive, exhibiting low electrical resistance (the “unblown state of the eFUSE). When a sufficiently large current is passed through the eFUSE conductor, localized heating occurs. This heating causes electromigration of the silicide into the silicon beam (and into surrounding silicon, thereby diffusing the silicide and greatly increasing its electrical resistance. When the current source is removed, the silicide remains permanently in this diffused state, the “blown” state of the eFUSE.

Abstract: The present invention provides an electrical fuse structure for achieving a post-programming resistance distribution with higher resistance values and to enhance the reliability of electrical fuse programming. A partly doped electrical fuse structure with undoped semiconductor material in the cathode combined with P-doped semiconductor material in the fuselink and anode is disclosed and the data supporting the superior performance of the disclosed electrical fuse is shown.

Abstract: The present invention provides structures for an integrated antifuse that incorporates an integrated sensing transistor with an integrated heater. Two terminals connected to the upper plate allow the heating of the upper plate, accelerating the breakdown of the antifuse dielectric at a lower bias voltage. Part of the upper plate also serves as the gate of the integrated sensing transistor. The antifuse dielectric serves as the gate dielectric of the integrated transistor. The lower plate comprises a channel, a drain, and a source of a transistor. While intact, the integrated sensing transistor allows a passage of transistor current through the drain. When programmed, the antifuse dielectric, which is the gate of the integrated transistor, is subjected to a gate breakdown, shorting the gate to the channel and resulting in a decreased drain current. The integrated antifuse structure can also be wired in an array to provide a compact OTP memory array.

Abstract: The present invention provides structures for antifuses that utilize electromigration for programming. By providing a portion of antifuse link with high resistance without conducting material and then by inducing electromigration of the conducting material into the antifuse link, the resistance of the antifuse structure is changed. By providing a terminal on the antifuse link, the change in the electrical properties of the antifuse link is detected and sensed. Also disclosed are an integrated antifuse with a built-in sensing device and a two dimensional array of integrated antifuses that can share programming transistors and sensing circuitry.

Abstract: A fuse structure, a method for fabricating the fuse structure and a method for programming a fuse within the fuse structure each use a fuse material layer that is used as a fuse, and located upon a monocrystalline semiconductor material layer in turn located over a substrate. At least part of the monocrystalline semiconductor material layer is separated from the substrate by a gap. Use of the monocrystalline semiconductor material layer, as well as the gap, provides for enhanced uniformity and reproducibility when programming the fuse.

Abstract: An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

Abstract: An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures.

Abstract: A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.