Abstract: A method for detecting wrong positioning of an earphone, and an electronic device and storage medium therefor are provided. The electronic device includes a speaker positioned on surface of a housing; and at least one processor configured to determine a positioning state of an earphone detachably connectable to the electronic device based on a difference between a first audio signal received through at least one microphone positioned in a first body of the earphone and a second audio signal received through at least one microphone positioned in a second body of the earphone.

Abstract: Disclosed are an electronic device and a method of processing an audio signal by the electronic device. The electronic device includes: a processor functionally connected to a speaker and a microphone; and a memory electrically connected to the processor. The memory includes instructions to cause the processor, when executed, to output a first audio signal through the speaker; identify that a second audio signal detected by the microphone corresponds to the first audio signal when the first audio signal is outputted through the speaker; and control output of the first audio signal based on the identification. Further, various other embodiments may be possible.

Abstract: Disclosed is a control method for an electronic device. An electronic device according to an embodiment comprises: at least one speaker; and a processor. The processor may be configured to: obtain sound source data; obtain first sound source data, corresponding to a first designated frequency band, from the sound source data by using a filter; generate second sound source data by applying sound effect to at least a portion of sound source data corresponding to a second designated frequency band among the sound source data; generate synthesized sound source data corresponding to the sound source data by synthesizing the first sound source data and the second sound source data; and output the synthesized sound source data through the at least one speaker. Other embodiments may also be possible.

Abstract: A method for detecting wrong positioning of an earphone, and an electronic device and storage medium therefor are provided. The electronic device includes a speaker positioned on surface of a housing; and at least one processor configured to determine a positioning state of an earphone detachably connectable to the electronic device based on a difference between a first audio signal received through at least one microphone positioned in a first body of the earphone and a second audio signal received through at least one microphone positioned in a second body of the earphone.

Abstract: Disclosed is a control method for an electronic device. An electronic device according to an embodiment comprises: at least one speaker; and a processor. The processor may be configured to: obtain sound source data; obtain first sound source data, corresponding to a first designated frequency band, from the sound source data by using a filter; generate second sound source data by applying sound effect to at least a portion of sound source data corresponding to a second designated frequency band among the sound source data; generate synthesized sound source data corresponding to the sound source data by synthesizing the first sound source data and the second sound source data; and output the synthesized sound source data through the at least one speaker. Other embodiments may also be possible.

Abstract: A method for detecting wrong positioning of an earphone, and an electronic device and storage medium therefor are provided. The electronic device includes a speaker positioned on surface of a housing; and at least one processor configured to determine a positioning state of an earphone detachably connectable to the electronic device based on a difference between a first audio signal received through at least one microphone positioned in a first body of the earphone and a second audio signal received through at least one microphone positioned in a second body of the earphone.

Abstract: Disclosed are an electronic device and a method of processing an audio signal by the electronic device. The electronic device includes: a processor functionally connected to a speaker and a microphone; and a memory electrically connected to the processor. The memory includes instructions to cause the processor, when executed, to output a first audio signal through the speaker; identify that a second audio signal detected by the microphone corresponds to the first audio signal when the first audio signal is outputted through the speaker; and control output of the first audio signal based on the identification. Further, various other embodiments may be possible.

Abstract: A method for detecting wrong positioning of an earphone, and an electronic device and storage medium therefor are provided. The electronic device includes a speaker positioned on surface of a housing; and at least one processor configured to determine a positioning state of an earphone detachably connectable to the electronic device based on a difference between a first audio signal received through at least one microphone positioned in a first body of the earphone and a second audio signal received through at least one microphone positioned in a second body of the earphone.

Abstract: The present disclosure provides an electronic device and method for playing image data. The method for playing back image data in an electronic device includes storing an audiovisual (A/V) data for a predetermined period of time in a memory of the electronic device. The electronic device plays back the A/V data, wherein upon playing back, by the electronic device, the A/V data comprises analyzing an audio signal of the A/V data dynamically to select one of a plurality of sound effects based on the analyzed audio signal. The A/V data is played back by applying the selected sound effect to at least a part of the A/V signal.

Abstract: The present disclosure provides an electronic device and method for playing image data. The method for playing back image data in an electronic device includes storing an audiovisual (A/V) data for a predetermined period of time in a memory of the electronic device. The electronic device plays back the A/V data, wherein upon playing back, by the electronic device, the A/V data comprises analyzing an audio signal of the A/V data dynamically to select one of a plurality of sound effects based on the analyzed audio signal. The A/V data is played back by applying the selected sound effect to at least a part of the A/V signal.

Abstract: An electronic device and a method for measuring quality of a voice signal are provided. The method includes generating a mask of an echo signal and a mask of a speech signal by comparing the echo signal and the speech signal included in an input sound with respective thresholds, calculating an estimation of the echo signal and an estimation of the speech signal, and measuring quality of the input speech signal by using each of the calculated estimation of the echo signal and the calculated estimation of the speech signal.

Abstract: A multi-layered dielectric layer wherein the adhesion characteristic of an insulating layer including a Si—CH3 bond is improved, and a method of forming the same are provided. The multi-layered dielectric layer is formed on conductive patterns and includes a first insulating layer formed of a layer having a low dielectric constant including the Si—CH3 bond. In order to improve the adhesion characteristic of the first insulating layer, an adhesion surface is formed on the surface of the first insulating layer by treating the first insulating layer with plasma. In an alternative, the adhesion characteristics of the first insulating layer is improved by forming a buffer layer on the first insulating layer so that dipole—dipole interaction occurs between the first insulating layer and the buffer layer.

Abstract: A multi-layered dielectric layer wherein the adhesion characteristic of an insulating layer including a Si—CH3 bond is improved, and a method of forming the same are provided. The multi-layered dielectric layer is formed on conductive patterns and includes a first insulating layer formed of a layer having a low dielectric constant including the Si—CH3 bond. In order to improve the adhesion characteristic of the first insulating layer, an adhesion surface is formed on the surface of the first insulating layer by treating the first insulating layer with plasma. In an alternative, the adhesion characteristics of the first insulating layer is improved by forming a buffer layer on the first insulating layer so that dipole-dipole interaction occurs between the first insulating layer and the buffer layer.

Abstract: A multi-layered dielectric layer wherein the adhesion characteristic of an insulating layer including a Si—CH3 bond is improved, and a method of forming the same are provided. The multi-layered dielectric layer is formed on conductive patterns and includes a first insulating layer formed of a layer having a low dielectric constant including the Si—CH3 bond. In order to improve the adhesion characteristic of the first insulating layer, an adhesion surface is formed on the surface of the first insulating layer by treating the first insulating layer with plasma. In an alternative, the adhesion characteristics of the first insulating layer is improved by forming a buffer layer on the first insulating layer so that dipole-dipole interaction occurs between the first insulating layer and the buffer layer.

Abstract: Methods of fabricating an interconnection to an underlying microelectronic layer include removing a portion of the insulation layer to form a plurality of contact holes having different contact sizes therethrough and thereby expose a portion of the microelectronic layer. A conductive material is deposited on the insulation layer and in the contact hole with a sufficient thickness such that a bridge is generated in the largest contact hole. The deposited conductive material is then reflowed to fill the contact hole and form an interconnection to the underlying microelectronic layer, by supplying a high pressure such that at least the void formed in the largest contact hole is filled. The conductive material may be planarized to thereby expose the insulation layer. The present invention may be applied to an asymmetrical contact hole, for example, a dual damascene structure.

Abstract: A method of forming a metal wiring using a dual damascene process is provided. A photosensitive polymer having low permittivity is used as an etch mask. Though the etch mask remains in the final structure, its low permittivity reduces parasitic capacitance effects. In this method, a photosensitive polymer pattern having a first hole with a first width is formed on a first interlayer dielectric film. A second interlayer dielectric film is formed on the photosensitive polymer pattern. A mask pattern, having a second hole, above the first hole, with a second width larger than the first width, is formed on the second interlayer dielectric film. A wiring region is formed by dry-etching the second interlayer dielectric film using the mask pattern as an etch mask. A via hole region is formed by dry-etching the first interlayer dielectric film using the photosensitive polymer pattern as an etch mask.

Abstract: A method of forming a metal wiring using a dual damascene process is provided. A photosensitive polymer having low permittivity is used as an etch mask. Though the etch mask remains in the final structure, its low permittivity reduces parasitic capacitance effects. In this method, a photosensitive polymer pattern having a first hole with a first width is formed on a first interlayer dielectric film. A second interlayer dielectric film is formed on the photosensitive polymer pattern. A mask pattern, having a second hole, above the first hole, with a second width larger than the first width, is formed on the second interlayer dielectric film. A wiring region is formed by dry-etching the second interlayer dielectric film using the mask pattern as an etch mask. A via hole region is formed by dry-etching the first interlayer dielectric film using the photosensitive polymer pattern as an etch mask.

Abstract: A method of forming a metal wiring using a dual damascene process is provided. A photosensitive polymer having low permittivity is used as an etch mask. Though the etch mask remains in the final structure, its low permittivity reduces parasitic capacitance effects. In this method, a photosensitive polymer pattern having a first hole with a first width is formed on a first interlayer dielectric film. A second interlayer dielectric film is formed on the photosensitive polymer pattern. A mask pattern, having a second hole, above the first hole, with a second width larger than the first width, is formed on the second interlayer dielectric film. A wiring region is formed by dry-etching the second interlayer dielectric film using the mask pattern as an etch mask. A via hole region is formed by dry-etching the first interlayer dielectric film using the photosensitive polymer pattern as an etch mask.

Abstract: A front panel assembly of a microwave oven which can improve the appearance and strength of the oven and a method for assembling the same are disclosed. The assembly includes a front panel frame and a reinforcement plate attached to the front panel frame and made of a metal such as stainless steel or synthetic resin. The assembly is assembled to a door frame or a front panel section of the oven. The front panel frame is formed with a recess into which the reinforcement plate is attached. The reinforcement plate is attached to the recess by using a double-sided adhesive tape or by a heat-treatment. The welding lines and non-homogeneous colors formed at the door frame and the front panel frame can be hidden and the strength of the oven increases.

Abstract: A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole.