Abstract: An image sensor comprising a substrate including a plurality of unit pixels and including a first surface facing a first direction and a second surface facing a second direction opposite to the first direction, and a pixel isolation structure passing through the substrate in the second direction between the unit pixels, wherein the pixel isolation structure includes a buried conductive pattern extending from the second surface of the substrate into an inside of the substrate, and an insulating structure covering a lower surface of the buried conductive pattern and extending between the substrate and the buried conductive pattern, a first level and a second level that is under the first level being defined, the lower surface of the buried conductive pattern being positioned at the second level.

Abstract: An image sensor includes a substrate including a first surface and a second surface opposite to the first surface, and a pixel separation part in the substrate, the pixel separation part separating a plurality of pixels from each other, the plurality of pixels including first to fourth pixels in a clockwise direction, the pixel separation part including a first part between the first and second pixels, and a second part between the first pixel and the third pixel. Each of the first part and the second part includes a first dielectric pattern covering a lateral surface of the substrate, and a first silicon pattern covering a lateral surface of the first dielectric pattern. The second part further includes a second silicon pattern adjacent to a sidewall of the first silicon pattern. The second silicon pattern has a rhombic shape in a plan view.

Abstract: An image sensor may include a substrate having a first surface and a second surface, which are opposite to each other, and micro lenses on the second surface, interconnection lines on the first surface, and a pixel isolation portion in the substrate, the pixel isolation portion configured to isolate pixels from direct contact with each other. The pixel isolation portion may include an insulating isolation pattern and a conductive pattern, wherein the conductive pattern is spaced apart from the substrate, and the insulating isolation pattern is between the substrate and the conductive pattern. The conductive pattern may include a sequential arrangement of a first conductive pattern, a second conductive pattern, and a third conductive pattern on a side surface of the insulating isolation pattern.

Abstract: An image sensor comprises a substrate having first and second surfaces opposite to each other, a fixed charge layer in contact with the second surface, an interlayer dielectric layer covering the first surface, a device isolation part adjacent to the first surface in the substrate, and a pixel isolation part in the substrate. The pixel isolation part includes a conductive pattern, a buried dielectric pattern, and an isolation dielectric pattern that is simultaneously in contact with the fixed charge layer and the interlayer dielectric layer. The isolation dielectric layer has a first thickness at a level between the buried dielectric pattern and the conductive pattern. The isolation dielectric layer has a second thickness at a level of a bottom surface of the fixed charge layer. The second thickness is different from the first thickness.

Abstract: A photoelectric conversion device includes a substrate and a wiring layer disposed on the substrate. The wiring layer includes a wiring structure and a wiring insulating layer that surrounds the wiring structure. A reflective layer is disposed on the wiring layer. The reflective layer is electrically connected to the wiring structure. A semi-permeable metal layer is spaced apart from the reflective layer in a thickness direction of the substrate. The semi-permeable metal layer faces the reflective layer to form a microcavity between the reflective layer and the semi-permeable metal layer. A stacked structure is between the reflective layer and the semi-permeable metal layer in the thickness direction of the substrate. The stacked structure includes a photoelectric conversion layer, a transparent electrode layer, and an insulating optical spacer.

Abstract: A method of measuring an image sensor is disclosed. The method includes connecting a measurement unit to an image sensor, producing an electric current, which sequentially flows through a second connection line, second lower electrodes, an upper electrode, first lower electrodes, and a first connection line of the image sensor, using the measurement unit, and measuring an alignment state of the lower electrodes, the photoelectric conversion layer, and the upper electrode.

Abstract: A method of measuring an image sensor is disclosed. The method includes connecting a measurement unit to an image sensor, producing an electric current, which sequentially flows through a second connection line, second lower electrodes, an upper electrode, first lower electrodes, and a first connection line of the image sensor, using the measurement unit, and measuring an alignment state of the lower electrodes, the photoelectric conversion layer, and the upper electrode.