Patents by Inventor Byeoung Jo Kim

Byeoung Jo Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200287076
    Abstract: Disclosed according to an embodiment is a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the semiconductor structure includes a third conductive semiconductor layer disposed between the second conductive semiconductor layer and the second electrode, the first conductive semiconductor layer includes a first dopant, the second conductive semiconductor layer includes a second dopant, the third conductive semiconductor layer includes the first dopant and the second dopant, and the concentration ratio between the first dopant and the second dopant included in the third conductive semiconductor layer ranges f
    Type: Application
    Filed: November 26, 2018
    Publication date: September 10, 2020
    Inventors: Rak Jun CHOI, Byeoung Jo KIM
  • Patent number: 10734547
    Abstract: An embodiment relates to a semiconductor device, a semiconductor device package, and a method for producing a semiconductor device, the semiconductor device comprising a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and an intermediate layer disposed between the first conductivity type semiconductor layer and the active layer, or disposed inside the first conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the intermediate layer, the active layer, and the second conductivity type semiconductor layer include aluminum, and the intermediate layer includes a first intermediate layer having a lower aluminum composition than that of the first conductivity type semiconductor layer.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: August 4, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Rak Jun Choi, Byeoung Jo Kim, Hyun Jee Oh, Jung Yeop Hong
  • Publication number: 20190326473
    Abstract: An embodiment relates to a semiconductor device, a semiconductor device package, and a method for producing a semiconductor device, the semiconductor device comprising a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an intermediate layer disposed between the first conductive semiconductor layer and the active layer, or disposed inside the first conductive semiconductor layer, wherein the first conductive semiconductor layer, the intermediate layer, the active layer, and the second conductive semiconductor layer include aluminum, and the intermediate layer includes a first intermediate layer having a lower aluminum composition than that of the first conductive semiconductor layer.
    Type: Application
    Filed: June 23, 2017
    Publication date: October 24, 2019
    Inventors: Rak Jun CHOI, Byeoung Jo KIM, Hyun Jee OH, Jung Yeop HONG
  • Publication number: 20190280154
    Abstract: A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.
    Type: Application
    Filed: May 17, 2019
    Publication date: September 12, 2019
    Inventors: Hyun Jee OH, Rak Jun Choi, Byeoung Jo Kim
  • Publication number: 20190267514
    Abstract: An embodiment discloses a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, and a semiconductor device package including the same. The second conductive semiconductor layer includes a first surface on which the second electrode is disposed. The second conductive semiconductor layer has a ratio of a second shortest distance W2, which is a distance from the first surface to a second point, to a first shortest distance W1, which is a distance from the first surface to a first point, (W2:W1) ranging from 1:1.25 to 1:100.
    Type: Application
    Filed: September 13, 2017
    Publication date: August 29, 2019
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Rak Jun CHOI, Byeoung Jo KIM, Hyun Jee OH, Sung Ho JUNG
  • Patent number: 10340415
    Abstract: A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: July 2, 2019
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hyun Jee Oh, Rak Jun Choi, Byeoung Jo Kim
  • Patent number: 10340417
    Abstract: A semiconductor device according to an embodiment comprises: a substrate; a buffer layer provided on the substrate; a first conductivity type semiconductor layer provided on the buffer layer; a second conductivity type semiconductor layer; a light emitting structure, provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, comprising an active layer which emits ultraviolet light; and a plurality of air voids provided within the buffer layer, wherein the air voids can be formed to have two or more inclined surfaces.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: July 2, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jae Hoon Choi, Hae Jin Park, Rak Jun Choi, Byeoung Jo Kim
  • Publication number: 20180315887
    Abstract: A semiconductor device according to an embodiment comprises: a substrate; a buffer layer provided on the substrate; a first conductivity type semiconductor layer provided on the buffer layer; a second conductivity type semiconductor layer; a light emitting structure, provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, comprising an active layer which emits ultraviolet light; and a plurality of air voids provided within the buffer layer, wherein the air voids can be formed to have two or more inclined surfaces.
    Type: Application
    Filed: October 14, 2016
    Publication date: November 1, 2018
    Inventors: Jae Hoon CHOI, Hae Jin PARK, Rak Jun CHOI, Byeoung Jo KIM
  • Publication number: 20180069150
    Abstract: A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.
    Type: Application
    Filed: August 31, 2017
    Publication date: March 8, 2018
    Inventors: Hyun Jee OH, Rak Jun CHOI, Byeoung Jo KIM
  • Patent number: 8723158
    Abstract: A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; a multi-contact layer disposed on at least a predetermined region of the second conductive type semiconductor layer, the multi-contact layer including at least one pair-structure configured of a first layer including InGaN having a dopant doped thereon and a second layer including GaN having a different dopant doped thereon; and a first electrode and a second electrode to provide currents to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively.
    Type: Grant
    Filed: February 7, 2012
    Date of Patent: May 13, 2014
    Assignee: LG Innotek Co., Ltd.
    Inventors: Jung Hun Jang, Jeong Sik Lee, Jeong Soon Yim, Byeoung Jo Kim, Seung Keun Nam
  • Publication number: 20120138893
    Abstract: A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; a multi-contact layer disposed on at least a predetermined region of the second conductive type semiconductor layer, the multi-contact layer including at least one pair-structure configured of a first layer including InGaN having a dopant doped thereon and a second layer including GaN having a different dopant doped thereon; and a first electrode and a second electrode to provide currents to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively.
    Type: Application
    Filed: February 7, 2012
    Publication date: June 7, 2012
    Inventors: Jung Hun Jang, Jeong Sik Lee, Jeong Soon Yim, Byeoung Jo Kim, Seung Keun Nam