Patents by Inventor Byong Guk Park
Byong Guk Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240032443Abstract: An embodiment magnetic memory device based on perpendicular exchange bias includes a non-magnetic layer, a ferromagnetic layer bonded on the non-magnetic layer, wherein a magnetization direction of the ferromagnetic layer is randomly distributed, and an anti-ferromagnetic layer bonded on the ferromagnetic layer. An embodiment method of manufacturing a magnetic memory device includes preparing the magnetic memory device based on perpendicular exchange bias, the preparing including bonding a ferromagnetic layer on a non-magnetic layer and bonding an anti-ferromagnetic layer on the ferromagnetic layer, and demagnetizing the ferromagnetic layer of the magnetic memory device, wherein a magnetization direction of the ferromagnetic layer is randomly distributed.Type: ApplicationFiled: January 16, 2023Publication date: January 25, 2024Inventors: Ji-Sung Lee, Joon-Hyun Kwon, Su-Jung Noh, Han-Saem Lee, Dae-Kyu Koh, Byong-Guk Park, Jaimin Kang, Soogil Lee
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Publication number: 20240032442Abstract: An embodiment spin-orbit torque device array includes a plurality of single devices, each device including a non-magnetic layer, a magnetic layer bonded to the non-magnetic layer, and an upper layer bonded to the magnetic layer, wherein the upper layer includes oxide, and wherein a magnetization state of each of the single devices has only two states, the two states being an up state and a down state.Type: ApplicationFiled: January 12, 2023Publication date: January 25, 2024Inventors: Ji-Sung Lee, Joon-Hyun Kwon, Su-Jung Noh, Han-Saem Lee, Dae-Kyu Koh, Byong-Guk Park, Jaimin Kang, Soogil Lee
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Patent number: 11791082Abstract: A magnetic nano oscillating device, according to an embodiment of the present invention, comprises: a ferromagnetic layer disposed on a substrate; a non-magnetic conductive layer laminated on the ferromagnetic layer; an antiferromagnetic layer (or a ferrimagnetic layer) laminated on the non-magnetic conductive layer; and first and second electrodes respectively contacting both side surfaces of the ferromagnetic layer and the non-magnetic conductive layer.Type: GrantFiled: July 27, 2020Date of Patent: October 17, 2023Assignee: Korea University Research and Business FoundationInventors: Kyung-Jin Lee, Byong Guk Park, Dong-Kyu Lee
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Patent number: 11730065Abstract: Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.Type: GrantFiled: June 28, 2021Date of Patent: August 15, 2023Assignee: Korea Advanced institute of Science and TechnologyInventors: Byong Guk Park, Min-Gu Kang, Jong-Guk Choi
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Publication number: 20230096447Abstract: Disclosed herein is a spin-orbit torque device including a lower ferromagnetic layer, a non-magnetic layer bonded to the lower ferromagnetic layer, and an upper ferromagnetic layer bonded to the non-magnetic layer, wherein a magnetization orientation of the lower ferromagnetic layer is randomly distributed. According to the present disclosure, it is possible to provide a magnetic memory device which cannot be physically duplicated and has reconfigurability using a spin-orbit torque.Type: ApplicationFiled: February 22, 2022Publication date: March 30, 2023Inventors: Ji-Sung Lee, Joon-Hyun Kwon, Su-Jung Noh, Han-Saem Lee, Byong-Guk Park, Jaimin Kang, Jeong-Mok Kim, Soogil Lee
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Patent number: 11362661Abstract: Disclosed is a magnetic logic device including: a plurality of input branches configured by a magnetic nanowire including a non-magnetic metallic layer, a free layer, and an insulating layer sequentially stacked; an output branch configured by the magnetic nanowire; a coupling portion configured by the magnetic nanowire and where the input branches and the output branch meet; gate electrodes arranged adjacent to the insulating layer in each of the plurality of input branches; and in-plane anisotropic ferromagnetic layers arranged adjacent to the non-magnetic metallic layer in each of the plurality of input branches.Type: GrantFiled: May 7, 2021Date of Patent: June 14, 2022Assignee: Korea Advanced Institute of Science and TechnologyInventors: Byong Guk Park, Kab-Jin Kim, Geun-hee Lee
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Publication number: 20220149268Abstract: Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.Type: ApplicationFiled: June 28, 2021Publication date: May 12, 2022Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Byong Guk PARK, Min-Gu KANG, Jong-Guk CHOI
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Patent number: 11205466Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.Type: GrantFiled: November 6, 2020Date of Patent: December 21, 2021Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Byong Guk Park, Seung Heon Baek, Kyung Woong Park
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Publication number: 20210351776Abstract: Disclosed is a magnetic logic device including: a plurality of input branches configured by a magnetic nanowire including a non-magnetic metallic layer, a free layer, and an insulating layer sequentially stacked; an output branch configured by the magnetic nanowire; a coupling portion configured by the magnetic nanowire and where the input branches and the output branch meet; gate electrodes arranged adjacent to the insulating layer in each of the plurality of input branches; and in-plane anisotropic ferromagnetic layers arranged adjacent to the non-magnetic metallic layer in each of the plurality of input branches.Type: ApplicationFiled: May 7, 2021Publication date: November 11, 2021Inventors: Byong Guk Park, Kab-Jin Kim, Geun-hee Lee
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Publication number: 20210082487Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.Type: ApplicationFiled: November 6, 2020Publication date: March 18, 2021Inventors: Byong Guk Park, Seung Heon Baek, Kyung Woong Park
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Patent number: 10861526Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.Type: GrantFiled: February 26, 2019Date of Patent: December 8, 2020Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Byong Guk Park, Seung Heon Baek, Kyung Woong Park
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Publication number: 20200357556Abstract: A magnetic nano oscillating device, according to an embodiment of the present invention, comprises: a ferromagnetic layer disposed on a substrate; a non-magnetic conductive layer laminated on the ferromagnetic layer; an antiferromagnetic layer (or a ferrimagnetic layer) laminated on the non-magnetic conductive layer; and first and second electrodes respectively contacting both side surfaces of the ferromagnetic layer and the non-magnetic conductive layer.Type: ApplicationFiled: July 27, 2020Publication date: November 12, 2020Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATIONInventors: Kyung-Jin LEE, Byong Guk PARK, Dong-Kyu LEE
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Patent number: 10360963Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.Type: GrantFiled: October 3, 2017Date of Patent: July 23, 2019Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Byong Guk Park, Seung Heon Baek, Kyung Woong Park
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Publication number: 20190189175Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.Type: ApplicationFiled: February 26, 2019Publication date: June 20, 2019Inventors: Byong Guk Park, Seung Heon Baek, Kyung Woong Park
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Patent number: 10276780Abstract: Semiconductor devices and semiconductor device control methods are described. A semiconductor device comprises a first electrode; a cell arranged on the first electrode and including a magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; and a heating element to form a thermal gradient in the first electrode.Type: GrantFiled: January 11, 2018Date of Patent: April 30, 2019Assignee: Korea Advanced Institute of Science and TechnologyInventors: Byong Guk Park, Dong Jun Kim, Chul Yeon Jeon
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Patent number: 10127956Abstract: A magnetic memory device may include tunnel junction unit cells, each including a pinned magnetic layer, an insulating layer, and a free magnetic layer which are sequentially stacked, a conductive line structure configured to supply an in-plane current to the unit cells and to include an antiferromagnetic layer, which is provided adjacent to the free magnetic layer, and a ferromagnetic layer, which is provided adjacent to the antiferromagnetic layer and has an in-plane magnetic anisotropy, and a voltage applying unit configured to independently apply a selection voltage to each of the tunnel junction unit cells. Each of the tunnel junction unit cells may have a magnetization direction that is selectively changed by the in-plane current and the selection voltage.Type: GrantFiled: July 20, 2017Date of Patent: November 13, 2018Assignee: Korea University Research and Business FoundationInventors: Kyung Jin Lee, Hyun Woo Lee, Byong Guk Park
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Publication number: 20180205004Abstract: The present invention relates to a semiconductor device and a semiconductor device control method. According to an example of the present invention, the semiconductor device comprises a first electrode; a cell arranged on the first electrode and including a magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; and a heating element to form a thermal gradient in the first electrode.Type: ApplicationFiled: January 11, 2018Publication date: July 19, 2018Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Byong Guk Park, Dong Jun Kim, Chul Yeon Jeon
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Publication number: 20180114557Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.Type: ApplicationFiled: October 3, 2017Publication date: April 26, 2018Inventors: Byong Guk Park, Seung Heon Baek, Kyung Woong Park
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Publication number: 20170316813Abstract: A magnetic memory device may include tunnel junction unit cells, each including a pinned magnetic layer, an insulating layer, and a free magnetic layer which are sequentially stacked, a conductive line structure configured to supply an in-plane current to the unit cells and to include an antiferromagnetic layer, which is provided adjacent to the free magnetic layer, and a ferromagnetic layer, which is provided adjacent to the antiferromagnetic layer and has an in-plane magnetic anisotropy, and a voltage applying unit configured to independently apply a selection voltage to each of the tunnel junction unit cells. Each of the tunnel junction unit cells may have a magnetization direction that is selectively changed by the in-plane current and the selection voltage.Type: ApplicationFiled: July 20, 2017Publication date: November 2, 2017Inventors: Kyung Jin Lee, Hyun Woo Lee, Byong Guk Park
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Publication number: 20170200885Abstract: The present invention relates to a magnetic memory device comprising: a fixed magnetic layer; an insulation layer arranged on the fixed magnetic layer; a free magnetic layer arranged on the insulation layer; a second non-magnetic layer arranged on the free magnetic layer; and a first non-magnetic layer arranged on the second non-magnetic layer, wherein the second non-magnetic layer may include an element in the Periodic Table III-V periods.Type: ApplicationFiled: November 8, 2016Publication date: July 13, 2017Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Byong Guk Park, Hae Yeon Lee