Patents by Inventor Byong Guk Park

Byong Guk Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210082487
    Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
    Type: Application
    Filed: November 6, 2020
    Publication date: March 18, 2021
    Inventors: Byong Guk Park, Seung Heon Baek, Kyung Woong Park
  • Patent number: 10861526
    Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: December 8, 2020
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Byong Guk Park, Seung Heon Baek, Kyung Woong Park
  • Publication number: 20200357556
    Abstract: A magnetic nano oscillating device, according to an embodiment of the present invention, comprises: a ferromagnetic layer disposed on a substrate; a non-magnetic conductive layer laminated on the ferromagnetic layer; an antiferromagnetic layer (or a ferrimagnetic layer) laminated on the non-magnetic conductive layer; and first and second electrodes respectively contacting both side surfaces of the ferromagnetic layer and the non-magnetic conductive layer.
    Type: Application
    Filed: July 27, 2020
    Publication date: November 12, 2020
    Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Kyung-Jin LEE, Byong Guk PARK, Dong-Kyu LEE
  • Patent number: 10360963
    Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: July 23, 2019
    Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Byong Guk Park, Seung Heon Baek, Kyung Woong Park
  • Publication number: 20190189175
    Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
    Type: Application
    Filed: February 26, 2019
    Publication date: June 20, 2019
    Inventors: Byong Guk Park, Seung Heon Baek, Kyung Woong Park
  • Patent number: 10276780
    Abstract: Semiconductor devices and semiconductor device control methods are described. A semiconductor device comprises a first electrode; a cell arranged on the first electrode and including a magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; and a heating element to form a thermal gradient in the first electrode.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: April 30, 2019
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Byong Guk Park, Dong Jun Kim, Chul Yeon Jeon
  • Patent number: 10127956
    Abstract: A magnetic memory device may include tunnel junction unit cells, each including a pinned magnetic layer, an insulating layer, and a free magnetic layer which are sequentially stacked, a conductive line structure configured to supply an in-plane current to the unit cells and to include an antiferromagnetic layer, which is provided adjacent to the free magnetic layer, and a ferromagnetic layer, which is provided adjacent to the antiferromagnetic layer and has an in-plane magnetic anisotropy, and a voltage applying unit configured to independently apply a selection voltage to each of the tunnel junction unit cells. Each of the tunnel junction unit cells may have a magnetization direction that is selectively changed by the in-plane current and the selection voltage.
    Type: Grant
    Filed: July 20, 2017
    Date of Patent: November 13, 2018
    Assignee: Korea University Research and Business Foundation
    Inventors: Kyung Jin Lee, Hyun Woo Lee, Byong Guk Park
  • Publication number: 20180205004
    Abstract: The present invention relates to a semiconductor device and a semiconductor device control method. According to an example of the present invention, the semiconductor device comprises a first electrode; a cell arranged on the first electrode and including a magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; and a heating element to form a thermal gradient in the first electrode.
    Type: Application
    Filed: January 11, 2018
    Publication date: July 19, 2018
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Byong Guk Park, Dong Jun Kim, Chul Yeon Jeon
  • Publication number: 20180114557
    Abstract: The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
    Type: Application
    Filed: October 3, 2017
    Publication date: April 26, 2018
    Inventors: Byong Guk Park, Seung Heon Baek, Kyung Woong Park
  • Publication number: 20170316813
    Abstract: A magnetic memory device may include tunnel junction unit cells, each including a pinned magnetic layer, an insulating layer, and a free magnetic layer which are sequentially stacked, a conductive line structure configured to supply an in-plane current to the unit cells and to include an antiferromagnetic layer, which is provided adjacent to the free magnetic layer, and a ferromagnetic layer, which is provided adjacent to the antiferromagnetic layer and has an in-plane magnetic anisotropy, and a voltage applying unit configured to independently apply a selection voltage to each of the tunnel junction unit cells. Each of the tunnel junction unit cells may have a magnetization direction that is selectively changed by the in-plane current and the selection voltage.
    Type: Application
    Filed: July 20, 2017
    Publication date: November 2, 2017
    Inventors: Kyung Jin Lee, Hyun Woo Lee, Byong Guk Park
  • Publication number: 20170200885
    Abstract: The present invention relates to a magnetic memory device comprising: a fixed magnetic layer; an insulation layer arranged on the fixed magnetic layer; a free magnetic layer arranged on the insulation layer; a second non-magnetic layer arranged on the free magnetic layer; and a first non-magnetic layer arranged on the second non-magnetic layer, wherein the second non-magnetic layer may include an element in the Periodic Table III-V periods.
    Type: Application
    Filed: November 8, 2016
    Publication date: July 13, 2017
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Byong Guk Park, Hae Yeon Lee
  • Patent number: 7939870
    Abstract: A magnetoresistive device comprises a ferromagnetic region, a non-ferromagnetic region, an insulating region and a conductive region. The insulating region is arranged between the ferromagnetic region and the conductive region so as to provide a tunnel barrier. The non-ferromagnetic region separates the insulating region and the ferromagnetic region.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: May 10, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Joerg Wunderlich, Byong Guk Park, Alexander Shick, Tomas Jungwirth, Frantisek Maca
  • Publication number: 20090146232
    Abstract: A magnetoresistive device comprises a ferromagnetic region, a non-ferromagnetic region, an insulating region and a conductive region. The insulating region is arranged between the ferromagnetic region and the conductive region so as to provide a tunnel barrier. The non-ferromagnetic region separates the insulating region and the ferromagnetic region.
    Type: Application
    Filed: November 26, 2008
    Publication date: June 11, 2009
    Inventors: Joerg Wunderlich, Byong Guk Park, Alexander Shick, Tomas Jungwirth, Frantisek Maca