Abstract: A test circuit of a semiconductor memory device for performing a test in cooperation with a tester having a plurality of input/output pins connected to a plurality of input/output lines. The test circuit may include a first comparing unit adapted to compare, on a bit-by-bit basis, read data that may be read from memory cells corresponding to an address with expected data, and to output the comparison results as first comparison signals, a second comparing unit adapted to perform a logic operation on the first comparison signals and to generate a flag signal when determining a failure of at least one of the memory cells on the basis of the operation result, and a storage unit adapted to store the first comparison signals in response to the flag signal.

Abstract: Example embodiments provide a dual mirror chip, a wafer including the dual mirror chip, multi-chip packages and methods of fabricating the same. Example embodiments also provide a method of testing the dual mirror chip. According to example embodiments, a dual mirror chip may include a first type chip with a first output pad portion on a first side of the first type chip and a first input pad portion on a second side of the first type chip. The dual mirror chip may also include a second type chip to the side of the first type chip. The second type chip may include a second input pad portion on a first side of the second type chip and a second output pad portion on a second side of the second type chip. The dual mirror chip may also include at least one conductive line connecting the input pad portions.

Abstract: A test circuit of a semiconductor memory device for performing a test in cooperation with a tester having a plurality of input/output pins connected to a plurality of input/output lines. The test circuit may include a first comparing unit adapted to compare, on a bit-by-bit basis, read data that may be read from memory cells corresponding to an address with expected data, and to output the comparison results as first comparison signals, a second comparing unit adapted to perform a logic operation on the first comparison signals and to generate a flag signal when determining a failure of at least one of the memory cells on the basis of the operation result, and a storage unit adapted to store the first comparison signals in response to the flag signal.

Abstract: A method of accessing an integrated circuit memory device can include reading from an address in a first memory sub-block during a first clock cycle. The address of a first data memory block address mapped to the first memory sub-block can be written to during the first clock cycle. The address of a second data memory block address mapped can be written to the second memory sub-block during a second clock cycle immediately subsequent in time to the first clock cycle. Related device are disclosed.

Abstract: Disclosed is a semiconductor integrated circuit device which includes a test element group circuit connected between a first and a second pad. The test element group circuit includes a plurality of semiconductor devices connected in series between the first and second pads. At least two adjacent ones of the semiconductor devices are connected to each other via a signal path that is formed by a multi-layer interconnection structure.

Abstract: Disclosed is a semiconductor integrated circuit device which includes a test element group circuit connected between a first and a second pad. The test element group circuit includes a plurality of semiconductor devices connected in series between the first and second pads. At least two adjacent ones of the semiconductor devices are connected to each other via a signal path that is formed by a multi-layer interconnection structure.

Abstract: A method of accessing an integrated circuit memory device can include reading from an address in a first memory sub-block during a first clock cycle. The address of a first data memory block address mapped to the first memory sub-block can be written to during the first clock cycle. The address of a second data memory block address mapped can be written to the second memory sub-block during a second clock cycle immediately subsequent in time to the first clock cycle. Related device are disclosed.

Abstract: Disclosed is a semiconductor integrated circuit device which includes a test element group circuit connected between a first and a second pad. The test element group circuit includes a plurality of semiconductor devices connected in series between the first and second pads. At least two adjacent ones of the semiconductor devices are connected to each other via a signal path that is formed by a multi-layer interconnection structure.

Abstract: An apparatus and method for controlling an input termination of a semiconductor memory device that easily detect and analyze defects, functions and reliability of the device by controlling operations of the input termination. The apparatus comprises an input termination circuit for matching an impedance of a transmission line, a control circuit for processing test commands and outputting control signals in response to said processing, and a switching circuit for selectively turning on/off the input termination circuit in response to the control signals output from the control circuit.

Abstract: Disclosed is a semiconductor integrated circuit device which includes a test element group circuit connected between a first and a second pad. The test element group circuit includes a plurality of semiconductor devices connected in series between the first and second pads. At least two adjacent ones of the semiconductor devices are connected to each other via a signal path that is formed by a multi-layer interconnection structure.

Abstract: An apparatus and method for controlling an input termination of a semiconductor memory device that easily detect and analyze defects, functions and reliability of the device by controlling operations of the input termination. The apparatus comprises an input termination circuit for matching an impedance of a transmission line, a control circuit for processing test commands and outputting control signals in response to said processing, and a switching circuit for selectively turning on/off the input termination circuit in response to the control signals output from the control circuit.