Patents by Inventor Byong-Sun Chun

Byong-Sun Chun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CoFeSiB/Pt multilayers exhibiting perpendicular magnetic anisotropy
    Patent number: 8852761
    Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: October 7, 2014
    Assignee: Korea University Foundation
    Inventors: Young Keun Kim, You-Song Kim, Byong-Sun Chun, Seung-Youb Han, Jang-Roh Rhee
  • CoFeSiB/Pt Multilayers Exhibiting Perpendicular Magnetic Anisotropy
    Publication number: 20130244058
    Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.
    Type: Application
    Filed: April 29, 2013
    Publication date: September 19, 2013
    Applicant: Korea University Foundation
    Inventors: Young Keun Kim, You-Song Kim, Byong-Sun Chun, Seung-Youb Han, Jang-Roh Rhee
  • CoFeSiB/Pt multilayers exhibiting perpendicular magnetic anisotropy
    Patent number: 8431256
    Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.
    Type: Grant
    Filed: May 10, 2007
    Date of Patent: April 30, 2013
    Assignee: Korea University Foundation
    Inventors: Young Keun Kim, You-Song Kim, Byong-Sun Chun, Seung-Youb Han, Jang-Roh Rhee
  • CoFeSiB/Pt Multilayers Exhibiting Perpendicular Magnetic Anisotropy
    Publication number: 20080124582
    Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.
    Type: Application
    Filed: May 10, 2007
    Publication date: May 29, 2008
    Applicant: KOREA UNIVERSITY FOUNDATION
    Inventors: Young Keun Kim, You-Song Kim, Byong-Sun Chun, Seung-Youb Han, Jang-Roh Rhee
  • Magnetic tunnel junction structure with amorphous NiFeSiB free layer
    Patent number: 7304359
    Abstract: A magnetic tunnel junction (MTJ) structure for a magnetic random access memory (MRAM) is provided. Specifically, an MTJ structure with an amorphous CoFeSiB or NiFeSiB free layer is provided. The free layer is a CoFeSiB single layer, a NiFeSiB single layer, a CoFeSiB/Ru/CoFeSiB SAF layer, or a NiFeSiB/Ru/NiFeSiB SAF layer.
    Type: Grant
    Filed: September 30, 2005
    Date of Patent: December 4, 2007
    Assignee: Korea University Foundation
    Inventors: Young-Keun Kim, Byong-Sun Chun, Jang-Roh Rhee, Jae-Youn Hwang
  • NANOCONTACTS HAVING IMPROVED CONTACT SHAPE
    Publication number: 20070223149
    Abstract: A nanocontact between contact wires is provided. The contact plane of the first nanocontact wire has a quadrant shape. The contact plane of the second nanocontact wire contacting the first nanocontact wire has a quadrant shape symmetrical with the quadrant contact plane of the first nanocontact wire with respect to origin. Thus, magnetization directions of the first and second nanowires are opposite to each other, regardless of initial spin moment orientation of the nanowire. When domain wall is formed, the thickness of the domain wall becomes constant, such that ballistic magnetoresistance ratio can be constant and reproducible.
    Type: Application
    Filed: March 28, 2006
    Publication date: September 27, 2007
    Inventors: Young Kim, Se-Dong Kim, Byong-Sun Chun
  • Magnetic tunnel junction structure with amorphous CoFeSiB or NiFeSiB free layer
    Publication number: 20060202290
    Abstract: A magnetic tunnel junction (MTJ) structure for a magnetic random access memory (MRAM) is provided. Specifically, an MTJ structure with an amorphous CoFeSiB or NiFeSiB free layer is provided. The free layer is a CoFeSiB single layer, a NiFeSiB single layer, a CoFeSiB/Ru/CoFeSiB SAF layer, or a NiFeSiB/Ru/NiFeSiB SAF layer.
    Type: Application
    Filed: September 30, 2005
    Publication date: September 14, 2006
    Inventors: Young-Keun Kim, Byong-Sun Chun, Jang-Roh Rhee, Jae-Youn Hwang