Abstract: A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.

Abstract: Disclosed are a thin film transistor including a source electrode and a drain electrode facing each other, a channel region between the source electrode and the drain electrode, and a gate electrode overlapped with the channel region, wherein the channel region includes a plurality of semiconductor stripes extending in a direction from the source electrode to the drain electrode, a method of manufacturing the same, a thin film transistor array panel, and an electronic device.

Abstract: Disclosed are a thin film transistor including a source electrode and a drain electrode facing each other, a channel region between the source electrode and the drain electrode, and a gate electrode overlapped with the channel region, wherein the channel region includes a plurality of semiconductor stripes extending in a direction from the source electrode to the drain electrode, a method of manufacturing the same, a thin film transistor array panel, and an electronic device.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.

Abstract: A photonic crystal structure includes a nano structure layer including a plurality of nano particles of various sizes, and a photonic crystal layer on the nano structure layer. The plurality of nano particles are spaced apart from each other. The photonic crystal layer has a non-planar surface, and is configured to reflect light of a particular wavelength.

Abstract: A method of manufacturing a thin film transistor includes forming a gate electrode, forming a gate insulating layer on the gate electrode, forming an organic semiconductor layer on the gate insulating layer, forming a solvent selective photosensitive layer on the organic semiconductor layer, forming an organic semiconductor pattern and a solvent selective photosensitive pattern by simultaneously patterning the organic semiconductor layer and the solvent selective photosensitive layer, respectively, and forming a source electrode and a drain electrode on the organic semiconductor pattern and the solvent selective photosensitive pattern, the source electrode and the drain electrode being electrically connected to the organic semiconductor pattern.

Abstract: A method of manufacturing a thin film transistor includes forming a gate electrode, forming a gate insulating layer on the gate electrode, forming an organic semiconductor layer on the gate insulating layer, forming a solvent selective photosensitive layer on the organic semiconductor layer, forming an organic semiconductor pattern and a solvent selective photosensitive pattern by simultaneously patterning the organic semiconductor layer and the solvent selective photosensitive layer, respectively, and forming a source electrode and a drain electrode on the organic semiconductor pattern and the solvent selective photosensitive pattern, the source electrode and the drain electrode being electrically connected to the organic semiconductor pattern.

Abstract: A photonic crystal structure includes a nano structure layer including a plurality of nano particles of various sizes, and a photonic crystal layer on the nano structure layer. The plurality of nano particles are spaced apart from each other. The photonic crystal layer has a non-planar surface, and is configured to reflect light of a particular wavelength.

Abstract: According to example embodiments, an organic passivation layer composition includes a cross-linking agent and an oligomer or a polymer including structural units represented by the following Chemical Formulae 1 and 2: In Chemical Formulae 1 and 2, each substituent is defined in the detailed description.

Abstract: Disclosed herein is a composition for forming an inorganic pattern, comprising an inorganic precursor, at least one stabilizer selected from ?-diketone and ?-ketoester, and a solvent. Use of the composition enables efficient and inexpensive formation of an inorganic micropattern.

Abstract: A method of manufacturing zinc oxide nanowires. A metal seed layer is formed on a substrate. The metal seed layer is thermally oxidized to form metal oxide crystals. Zinc oxide nanowires are grown on the metal oxide crystals serving as seeds for growth. The zinc oxide nanowires are aligned in one direction with respect to the surface of the substrate.

Abstract: Disclosed are p-n zinc (Zn) oxide nanowires and a methods of manufacturing the same. A p-n Zn oxide nanowire includes a p-n junction structure in which phosphorus (P) is on a surface of a Zn oxide nanowire.

Abstract: A thin film transistor includes nanowires. More specifically, the thin film transistor includes nanowires aligned between and extending to opposite facing lateral surfaces of source/drain electrodes on a substrate. The nanowires extend in a direction parallel to a major surface defining the substrate to form a semiconductor channel layer. Also disclosed herein is a method for fabricating the thin film transistor.

Abstract: A photonic crystal structure includes a nano structure layer including a plurality of nano particles of various sizes, and a photonic crystal layer on the nano structure layer. The plurality of nano particles are spaced apart from each other. The photonic crystal layer has a non-planar surface, and is configured to reflect light of a particular wavelength.

Abstract: A reflective display device including: a substrate; a reflective layer on the substrate and configured to reflect light incident on the reflective layer; a color filter layer on the reflective layer; and an optical shutter layer on the color filter layer. Each pixel of a plurality of pixels of the reflective display device includes a plurality of sub-pixels and each sub-pixel includes the substrate, the reflective layer, the color filter layer, and the optical shutter layer, and for each pixel, the color filter layer includes a plurality of color filter elements corresponding to colors respectively obtained by the plurality of sub-pixels.

Abstract: According to example embodiments, an organic passivation layer composition includes a cross-linking agent and an oligomer or a polymer including structural units represented by the following Chemical Formulae 1 and 2: In Chemical Formulae 1 and 2, each substituent is defined in the detailed description.

Abstract: A reflective display device may include pixels. Each pixel may include sub-pixels. Each sub-pixel may include first and second substrates spaced apart from each other; a driving unit formed on a top surface of the first substrate; a reflective layer, acting as a first electrode to which a voltage is applied by the driving unit, disposed above the driving unit; a second electrode formed on a bottom surface of the second substrate; a color filter layer disposed between the reflective layer and the second electrode; and a polymer dispersed liquid crystal (PDLC) layer. If the color filter layer is formed on the reflective layer; then the PDLC layer may be disposed between the second electrode and color filter layer. If the color filter layer is formed on a bottom surface of the second electrode, then the PDLC layer may be disposed between the reflective layer and color filter layer.

Abstract: A piezoelectric device including an engraved nanostructure body and a method of manufacturing the same are provided. The piezoelectric device includes a matrix including a piezoelectric material, a nanopore may be disposed in the matrix, and the nanopore may be extended substantially in a predetermined direction. The method may include coating a piezoelectric material on a substrate having a nanostructure body disposed thereon, and selectively etching the nanostructure body.

Abstract: A reflective display device including: a substrate; a reflective layer on the substrate and configured to reflect light incident on the reflective layer; a color filter layer on the reflective layer; and an optical shutter layer on the color filter layer. Each pixel of a plurality of pixels of the reflective display device includes a plurality of sub-pixels and each sub-pixel includes the substrate, the reflective layer, the color filter layer, and the optical shutter layer, and for each pixel, the color filter layer includes a plurality of color filter elements corresponding to colors respectively obtained by the plurality of sub-pixels.