Patents by Inventor Byongsung LEE

Byongsung LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8410809
    Abstract: A low-voltage and over-voltage detection circuit receives a power source voltage, generates a shift voltage by shifting the received voltage to a predetermined level, and fixes the shift voltage as a clamping voltage when the shift voltage is higher than a predetermined clamping voltage. The low-voltage and over-voltage detection circuit includes a first transistor and a second transistor. The first transistor generates a regulator voltage that varies according to the power source voltage and performs a switching operation according to the shift voltage and the regulator voltage, and the second transistor is connected in parallel with the first transistor and generates hysteresis. The low-voltage and over-voltage detection circuit determines whether the power source voltage is a low-voltage or an over-voltage by using a drain voltage generated according to currents flowing to the first and second transistors.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: April 2, 2013
    Assignee: Fairchild Korea Semiconductor Ltd.
    Inventors: Kyoungmin Lee, Duckki Kwon, Juho Kim, Eunchul Kang, Byongsung Lee
  • Publication number: 20100244885
    Abstract: The present invention relates to a low-voltage and over-voltage detection circuit and a driving method thereof. The low-voltage and over-voltage detection circuit according to the present invention receives a power source voltage, generates a shift voltage by shifting the received voltage to a predetermined level, and fixes the shift voltage as a clamping voltage when the shift voltage is higher than a predetermined clamping voltage. The low-voltage and over-voltage detection circuit according to the present invention includes a first transistor and a second transistor. The first transistor generates a regulator voltage that varies according to the power source voltage and performs a switching operation according to the shift voltage and the regulator voltage, and the second transistor is connected in parallel with the first transistor and generates hysteresis.
    Type: Application
    Filed: March 16, 2010
    Publication date: September 30, 2010
    Inventors: Kyoungmin LEE, Duckki KWON, Juho KIM, Eunchul KANG, Byongsung LEE