Abstract: The present invention relates to a drying apparatus capable of regenerating an adsorbent used for drying using microwaves. The drying apparatus of the present invention is formed to include a microwave irradiation means configured to irradiate microwaves to the adsorbent in a plurality of reaction towers in which the adsorbent adsorbing moisture or carbon dioxide is embedded, and when regenerating the adsorbent, directly heats the adsorbent using microwaves, thereby shortening a heating time and securing a sufficient cooling time, resulting in the effect of reducing the amount of dry air consumed for cooling and further increasing the drying efficiency.

Abstract: A method of depositing a thin film using a hafnium compound includes depositing a primary thin film and depositing a secondary thin film. The depositing of the primary thin film and the depositing of the secondary thin film are repeated once or more. The depositing of the primary thin film includes feeding a first reactive gas, purging the first reactive gas, feeding a third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a first plurality of (N) times. The feeding of the first reactive gas includes feeding a second reactive gas, purging the second reactive gas, feeding the third reactive gas, and purging the third reactive gas, and repeating the aforementioned steps a second plurality of (M) times.

Abstract: Provided is a method of depositing a thin film using a hafnium compound. In this method, the depositing (S200) of a thin film includes (S20) depositing a primary thin film and (S21) depositing a secondary thin film. Step (S200) is performed by repeating steps (S20) and (S21) once or more. Step (S20) includes (S20-1) feeding a first reactive gas, (S20-2) purging the first reactive gas, (S20-3) feeding a third reactive gas, and (S20-4) purging the third reactive gas. Step (S21) includes (S21-1) feeding a second reactive gas, (S21-2) purging the second reactive gas, (S21-3) feeding the third reactive gas, and (S21-4) purging the third reactive gas. Step (S20) is performed by repeating steps (S20-1), (S20-2), (S20-3), and (S20-4) N times, and step (S21) is performed by repeating steps (S21-1), (S21-2), (S21-3), and (S21-4) M times.