Abstract: Disclosed is an electric field-controlled magnetoresistive random-access memory (MRAM) including memory cells. The memory cell has a heterogenous double tunnel junction structure including a first tunnel junction and a second tunnel junction. The first tunnel junction includes a magnetic tunnel junction layer having a magnetization direction that changes according to spin transfer torque when an external voltage is applied, and the second tunnel junction includes an electric-field control layer that controls an electric field applied to the magnetic tunnel junction layer to induce a change in magnetic anisotropy within the magnetic tunnel junction layer. The heterogeneous tunnel junction structure combines electric field-controlled magnetic anisotropy and spin transfer torque to enable low power driving of memory cells, thereby enabling a high energy-efficient electric field-controlled MRAM.

Abstract: A nano spintronic device for using the spin current of a ferromagnetic material and the spin current of a heavy metal channel. The device includes a lower channel layer, a free layer, a pinned layer, an insulating film layer, and an upper channel layer. When current flows upon application of power, electrons are divided into +y-polarized spins and ?y-polarized spins in the lower channel layer, thereby generating torque in the free layer. The torque switches the magnetization direction of the free layer to an +y-axis direction or an ?y-axis direction so that the free layer stores magnetization information according to the magnetization direction. When current flows in the upper channel layer, the current flows into the pinned layer so that electrons in the pinned layer are divided into +y-polarized spins and ?y-polarized spins. The insulating layer insulates the free layer and the pinned layer from each other.

Abstract: Provided is a method of a generating a skyrmion. The method includes a step of preparing a magnetic multilayer system and a step of generating a skyrmion at a temperature of 400° C. or higher by adjusting the magnetic anisotropy value and the magnetization value of the magnetic multilayer system.

Abstract: Provided is a method of a generating a skyrmion. The method includes a step of preparing a magnetic multilayer system and a step of generating a skyrmion at a temperature of 400° C. or higher by adjusting the magnetic anisotropy value and the magnetization value of the magnetic multilayer system.

Abstract: Provided is a method of measuring a magnitude of magnetization of a perpendicular magnetic thin film, including: forming a stripe pattern in which a first magnetic domain that extends in a y direction and is magnetized in a z direction and a second magnetic domain that extends in the y direction and is magnetized in a direction opposite to the z direction are arranged alternately in an x direction, in a perpendicular magnetic thin film that extends in an xy plane; changing widths in the x direction, of the first and second magnetic domains by applying a magnetic field having a predetermined magnitude, in the z direction, to the perpendicular magnetic thin film; and calculating an absolute value of the magnetization of the perpendicular magnetic thin film on the basis of a ratio between the widths in the x direction, of the first magnetic domain and the second magnetic domain.

Abstract: A logic function device according to an embodiment of the present invention includes one or more function reconfiguring units having magnetization in one direction set by spin torque caused due to an function reconfiguring current, and an output terminal formed at an end thereof; and one or more input units formed on the function reconfiguring unit and having magnetization in the one direction set by spin torque caused due to an input current, wherein an output voltage of the output terminal is determined on the basis of whether a magnetization direction of the function reconfiguring unit and a magnetization direction of the input unit are parallel or anti-parallel.

Abstract: A logic function device according to an embodiment of the present invention includes one or more function reconfiguring units having magnetization in one direction set by spin torque caused due to an function reconfiguring current, and an output terminal formed at an end thereof; and one or more input units formed on the function reconfiguring unit and having magnetization in the one direction set by spin torque caused due to an input current, wherein an output voltage of the output terminal is determined on the basis of whether a magnetization direction of the function reconfiguring unit and a magnetization direction of the input unit are parallel or anti-parallel.

Abstract: A spin torque magnetic RAM according to the present invention includes at least one row selection line positioned on a silicon substrate to induce a spin orbit interaction therein; at least one first magnetic pattern positioned on the row selection line; a second magnetic pattern positioned on the first magnetic pattern; a tunnel barrier positioned on the second magnetic pattern; and a third magnetic pattern positioned on the tunnel barrier, wherein the first magnetic pattern is made of a cobalt film, the first magnetic pattern and the second magnetic pattern have a total thickness of 5 nm to form a free layer, and the third magnetic pattern is formed with a pinned layer in which a magnetization direction is fixed.

Abstract: Disclosed is an electric field-controlled magnetoresistive random-access memory (MRAM) including memory cells. The memory cell has a heterogenous double tunnel junction structure including a first tunnel junction and a second tunnel junction. The first tunnel junction includes a magnetic tunnel junction layer having a magnetization direction that changes according to spin transfer torque when an external voltage is applied, and the second tunnel junction includes an electric-field control layer that controls an electric field applied to the magnetic tunnel junction layer to induce a change in magnetic anisotropy within the magnetic tunnel junction layer. The heterogeneous tunnel junction structure combines electric field-controlled magnetic anisotropy and spin transfer torque to enable low power driving of memory cells, thereby enabling a high energy-efficient electric field-controlled MRAM.

Abstract: Provided is a method of measuring a magnitude of magnetization of a perpendicular magnetic thin film, including: forming a stripe pattern in which a first magnetic domain that extends in a y direction and is magnetized in a z direction and a second magnetic domain that extends in the y direction and is magnetized in a direction opposite to the z direction are arranged alternately in an x direction, in a perpendicular magnetic thin film that extends in an xy plane; changing widths in the x direction, of the first and second magnetic domains by applying a magnetic field having a predetermined magnitude, in the z direction, to the perpendicular magnetic thin film; and calculating an absolute value of the magnetization of the perpendicular magnetic thin film on the basis of a ratio between the widths in the x direction, of the first magnetic domain and the second magnetic domain.

Abstract: Disclosed is a wafer inspection apparatus. The wafer inspection apparatus includes: a magnetic field generating unit forming a magnetic field such that magnetic lines of force flow in a direction perpendicular or parallel to a first surface of a wafer on which a magnetic thin film is formed; a microwave guide unit emitting microwaves to a measurement region that is at least a partial region of the wafer and is a region affected by the magnetic field generated by the magnetic field generating unit; and a sensing unit receiving waves reflected or transmitted after the microwaves are emitted to the measurement region from the microwave guide unit.

Abstract: The present invention relates to a magnetic RAM including a memory cell, the memory cell including a metal layer, a magnetic tunnel junction layer storing predefined information by causing a magnetization direction to be up or down, a spin-current transfer layer transferring spin current to the magnetic tunnel junction layer, a spin-current generation layer generating the spin current, and a thermal electron injection layer injecting thermal electrons into the spin-current generation layer, and the magnetization direction may be changed due to spin transfer torque generated in the magnetic tunnel junction layer, whereby it is possible to reduce current density consumed for switching the magnetization direction of the free magnetic sub-layer in the magnetic tunnel junction layer.

Abstract: The present invention relates to a magnetic RAM including a memory cell, the memory cell including a metal layer, a magnetic tunnel junction layer storing predefined information by causing a magnetization direction to be up or down, a spin-current transfer layer transferring spin current to the magnetic tunnel junction layer, a spin-current generation layer generating the spin current, and a thermal electron injection layer injecting thermal electrons into the spin-current generation layer, and the magnetization direction may be changed due to spin transfer torque generated in the magnetic tunnel junction layer, whereby it is possible to reduce current density consumed for switching the magnetization direction of the free magnetic sub-layer in the magnetic tunnel junction layer.

Abstract: A spin torque magnetic RAM according to the present invention includes at least one row selection line positioned on a silicon substrate to induce a spin orbit interaction therein; at least one first magnetic pattern positioned on the row selection line; a second magnetic pattern positioned on the first magnetic pattern; a tunnel barrier positioned on the second magnetic pattern; and a third magnetic pattern positioned on the tunnel barrier, wherein the first magnetic pattern is made of a cobalt film, the first magnetic pattern and the second magnetic pattern have a total thickness of 5 nm to form a free layer, and the third magnetic pattern is formed with a pinned layer in which a magnetization direction is fixed.

Abstract: Disclosed is a wafer inspection apparatus. The wafer inspection apparatus includes: a magnetic field generating unit forming a magnetic field such that magnetic lines of force flow in a direction perpendicular or parallel to a first surface of a wafer on which a magnetic thin film is formed; a microwave guide unit emitting microwaves to a measurement region that is at least a partial region of the wafer and is a region affected by the magnetic field generated by the magnetic field generating unit; and a sensing unit receiving waves reflected or transmitted after the microwaves are emitted to the measurement region from the microwave guide unit.

Abstract: A spin control electronic device operable at room temperature according to an embodiment of the present invention includes a transfer channel that includes a low-dimensional nanostructure, the nanostructure being located on a substrate, having an elongate shape in a first direction and having a cross section, cut along a second direction that is perpendicular to the first direction, in the shape of a triangle; a source electrode located on the substrate and intersecting the transfer channel, the source electrode covering part of the transfer channel; and a drain electrode spaced apart from the source electrode on the substrate, the drain electrode intersecting the transfer channel and covering part of the transfer channel.

Abstract: A spin control electronic device operable at room temperature according to an embodiment of the present invention includes a transfer channel that includes a low-dimensional nanostructure, the nanostructure being located on a substrate, having an elongate shape in a first direction and having a cross section, cut along a second direction that is perpendicular to the first direction, in the shape of a triangle; a source electrode located on the substrate and intersecting the transfer channel, the source electrode covering part of the transfer channel; and a drain electrode spaced apart from the source electrode on the substrate, the drain electrode intersecting the transfer channel and covering part of the transfer channel.

Abstract: A perpendicularly magnetized thin film structure and a method of manufacturing the perpendicularly magnetized thin film structure are provided. The perpendicularly magnetized thin film structure includes i) a base layer, ii) a magnetic layer located on the base layer and having an L10-crystalline structure, and iii) a metal oxide layer located on the magnetic layer.

Abstract: The present invention relates to a magnetic tunnel junction device and a manufacturing method thereof. The magnetic tunnel junction device includes: i) a first magnetic layer including a compound having a chemical formula of (A100-xBx)100-yCy; ii) an insulating layer deposited on the first magnetic layer; and iii) a second magnetic layer deposited on the insulating layer and including a compound having a chemical formula of (A100-xBx)100-yCy. The first and second magnetic layers have perpendicular magnetic anisotropy, A and B are respectively metal elements, and C is at least one amorphizing element selected from a group consisting of boron (B), carbon (C), tantalum (Ta), and hafnium (Hf).

Abstract: An oscillator using spin transfer torque includes i) a pinned magnetic layer having a fixed magnetization direction, ii) a non-magnetic layer located on the pinned magnetic layer, and iii) a free magnetic layer located on the non-magnetic layer. The pinned magnetic layer includes i) a first part of the fixed magnetic layer and ii) a second part of the fixed magnetic layer located thereon. The first part of the fixed magnetic layer includes i) a first interface in contact with the second part of the fixed magnetic layer and ii) a second surface exposed to an outside while surrounding the first interface.