Abstract: The present inventive concept relates to a gas supply apparatus for a substrate processing apparatus, the gas supply apparatus comprising: a first supply line connected to a first gas spray unit; a plurality of first gas supply devices connected to the first supply line; a first measurement device measuring a first pressure at the first supply line; a second supply line connected to a second gas spray unit; a plurality of second gas supply devices connected to the second supply line; and a second measurement device measuring a second pressure at the second supply line, wherein the first measurement device checks if the first pressure deviates from a first reference value, and the second measurement device checks if the second pressure deviates from a second reference value.

Abstract: The present inventive concept relates to a substrate processing method in which a processing process is performed on a substrate in a processing space divided into a first processing region and a second processing region. The substrate processing method comprises the steps of: performing a first processing process on a substrate in the first processing region when the substrate supported by the support part is positioned in the first processing region; moving the substrate to the second processing region by rotating the support part when the first processing process is completed; and performing a second processing process on the substrate in the second processing region when the substrate supported by the support part is positioned in the second processing region.

Abstract: The present inventive concept relates to a substrate processing apparatus and a gas distribution apparatus for substrate processing apparatuses including: a plasma generator generating plasma for performing a processing process on a substrate supported by a substrate supporting unit; a ground body coupled to the plasma generator; and a plasma shield shielding the plasma generated by the plasma generator, wherein the plasma generator includes a first electrode for generating the plasma and a second electrode coupled to the ground body at a position spaced apart from the first electrode so that a gas distribution space for distributing a process gas is provided between the first electrode and the second electrode, and the plasma shield shields the plasma, generated by the plasma generator, in at least one of a top of the substrate and a bottom of the substrate.

Abstract: Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.

Abstract: Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.

Abstract: The present disclosure relates to a substrate processing apparatus, to which a source gas and a reactant gas are distributed, including a first exhaust line exhausting a first exhaust gas including the reactant gas and the source gas which is more than the reactant gas, a second exhaust line exhausting a second exhaust gas including the source gas and the reactant gas which is more than the source gas, a catch device installed in the first exhaust line, and a third exhaust line connected to an exhaust pump to exhaust the first exhaust gas passing through the catch device and the second exhaust gas passing through the second exhaust line.

Abstract: Disclosed is a method of manufacturing a capacitor having a high dielectric constant, which prevents a surface of a dielectric layer from being deteriorated due to a vacuum break and prevents the quality of a dielectric layer from being degraded due to a physical stress occurring when a semiconductor substrate is being loaded and unloaded.

Abstract: Disclosed are an apparatus and method for processing a substrate. The apparatus includes a chamber, a susceptor disposed in a lower portion of the chamber, a chamber lid disposed on the susceptor, a first source gas distributor installed in the chamber lid to distribute a source gas, a second source gas distributor installed in the chamber lid to distribute a source gas, and a first purge gas distributor installed in the chamber lid to distribute a purge gas. At least one substrate is disposed on the susceptor, and the first purge gas distributor is installed between the first and second source gas distributors.

Abstract: Disclosed is a substrate processing apparatus which is capable of improving uniformity of thin film to be deposited onto a substrate, and also freely adjusting productivity, wherein the substrate processing apparatus may include a process chamber for providing a process space; a substrate supporter, which is rotatably provided in the process space, for supporting at least one substrate; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributing part for spatially separating the process space into first and second reaction spaces, and inducing the different kinds of deposition reactions in the respective first and second reaction spaces, wherein the gas distributing part is provided in the chamber lid.

Abstract: Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.

Abstract: A cleaning method of a process chamber to remove a nitride layer including aluminum and a transition metal, which is adhered to an inner surface of the process chamber, includes removing the nitride layer by supplying cleaning gases to the process chamber, wherein the cleaning gases comprises a first gas including boron and a second gas including fluorine.

Abstract: A thin film deposition system and a method for deposit a thin film are disclosed. A thin film deposition system includes a source material feeder configured to feed source material, a source gas feeder comprising a vaporizer connected with the source material feeder to evaporate the source material fed by the source material feeder, a thin film deposition device connected with the source gas feeder to deposit the evaporated source material fed by the source gas feeder on a treatment object, vaporizer exhaustion unit having an end connected with the vaporizer to ventilate an inside of the vaporizer, and a pressure adjuster connected with the exhaustion tube to adjust the pressure of the exhaustion tube to control the velocity of source material fed to the vaporizer.

Abstract: A cleaning method of a process chamber to remove a nitride layer including aluminum and a transition metal, which is adhered to an inner surface of the process chamber, includes removing the nitride layer by supplying cleaning gases to the process chamber, wherein the cleaning gases comprises a first gas including boron and a second gas including fluorine.

Abstract: Disclosed are PEALD (plasma-enhanced atomic layer deposition) apparatus and PEALD method for manufacturing a semiconductor device, the PEALD apparatus comprising: a housing including a reaction chamber in which a deposition reaction is performed; a rotary disk unit installed in the housing and provided with a plurality of susceptors for receiving wafers thereon so as to move the wafers; a gas spray unit mounted on the upper end of the housing above the rotary disk unit, and provided with first reactive gas sprayers, second reactive gas sprayers and inert gas sprayers on a lower surface of a circular disk for spraying respective gases into the housing; a gas feed unit connected to the gas spray unit for supplying first and second reactive gases and a purge gas into the housing; a gas exhaust port formed around the rotary disk unit; and a plasma generator for generating plasma to excite the second reactive gas.

Abstract: The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a Si2Cl6 source unlike a conventional atomic layer deposition process using a SiCl4 source. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing —OH group.

Abstract: Disclosed are PEALD (plasma-enhanced atomic layer deposition) apparatus and PEALD method for manufacturing a semiconductor device, the PEALD apparatus comprising: a housing including a reaction chamber in which a deposition reaction is performed; a rotary disk unit installed in the housing and provided with a plurality of susceptors for receiving wafers thereon so as to move the wafers; a gas spray unit mounted on the upper end of the housing above the rotary disk unit, and provided with first reactive gas sprayers, second reactive gas sprayers and inert gas sprayers on a lower surface of a circular disk for spraying respective gases into the housing; a gas feed unit connected to the gas spray unit for supplying first and second reactive gases and a purge gas into the housing; a gas exhaust port formed around the rotary disk unit; and a plasma generator for generating plasma to excite the second reactive gas.

Abstract: The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a Si2Cl6 source unlike a conventional atomic layer deposition process using a SiCl4 source. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing —OH group.