Abstract: A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including source and drain regions, each having a first metal catalyst crystallization region and a second metal catalyst crystallization region, and a channel region having the second metal catalyst crystallization region, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the semiconductor layer and the gate electrode to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and electrically connected to the source and drain regions, respectively. An OLED display device includes the thin film transistor and a first electrode, an organic layer, and a second electrode electrically connected to the source and drain electrodes.

Abstract: A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers.

Abstract: Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is patterned to form a capping layer pattern, and the amorphous silicon layer is crystallized, such that the density and position of seeds formed at an interface between the amorphous silicon layer and the capping layer pattern is controlled, thereby improving the size and uniformity of grains, and in which polycrystalline silicon of desired size and uniformity is selectively formed at a desired position by one crystallization process, resulting in a thin film transistor having excellent and desired properties.

Abstract: A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT. The TFT includes: a substrate; a polycrystalline silicon (poly-Si) semiconductor layer disposed on the substrate, including source, drain, and channel regions, a crystallization-inducing metal, first gettering sites disposed on opposing edges of the semiconductor layer, and a second gettering site spaced apart from the first gettering sites; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer disposed on the gate electrode; and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to the source and drain regions of the semiconductor layer.

Abstract: A thin film transistor and a method of fabricating the same are disclosed. The method includes: sequentially depositing an amorphous silicon layer, a capping layer, and a metal catalyst layer; annealing the entire layer to crystallize the amorphous silicon layer into a polysilicon layer; removing the capping layer; and, when the capping layer is perfectly removed to make a contact angle of the polysilicon layer within a range of about 40 to about 80°, forming a semiconductor layer using the polysilicon layer.

Abstract: A thin film transistor, a method of fabricating the same, and an OLED display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and having a channel region, source and drain regions, and a body contact region, a gate insulating layer disposed on the semiconductor layer to expose the body contact region, a silicon layer disposed on the gate insulating layer and contacting the body contact region exposed by the gate insulating layer, a gate electrode disposed on the silicon layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer and electrically connected with the source and drain regions, wherein the body contact region is formed in an edge region of the semiconductor layer.

Abstract: A thin film transistor and method of fabricating the same are provided. In the thin film transistor, a seed or a grain boundary exists in a semiconductor layer pattern but not in a junction region. The method includes forming a semiconductor layer pattern. Forming the semiconductor layer pattern includes: forming and patterning a first capping layer on an amorphous silicon layer; forming a second capping layer on the first capping layer pattern; forming a metal catalyst layer on the second capping layer; diffusing the metal catalyst; and crystallizing the amorphous silicon layer to form a polysilicon layer. Therefore, it is possible to prevent that a trap is generated in the junction region, thereby obtaining improved and uniform characteristics of the device.

Abstract: A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer.

Abstract: A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT including a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer and crystallized using a metal catalyst, and source and drain electrodes disposed on the semiconductor layer and electrically connected to source and drain regions of the semiconductor layer. A second metal is diffused into a surface region of the semiconductor layer, to getter the metal catalyst from a channel region of the semiconductor layer. The second metal can have a lower diffusion coefficient in silicon than the metal catalyst.

Abstract: An organic light emitting display includes an organic light emitting diode formed on a substrate, coupled to a transistor; a photodiode formed on the substrate and including a semiconductor layer including a high-concentration P doping region, an intrinsic region with defects and a high-concentration N doping region; and a controller that uniformly controls the luminance of light emitted from the organic light emitting diode by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photodiode.

Abstract: A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and crystallized using a metal catalyst, a gate insulating layer disposed on the semiconductor layer, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to source and drain regions of the semiconductor layer through contact holes exposing predetermined regions of the source and drain regions of the semiconductor layer formed within the gate insulating layer and the interlayer insulating layer. A metal silicide including a metal that is different from the metal catalyst is present within a region of the semiconductor layer under the contact hole from the surface of the semiconductor layer to a predetermined depth.

Abstract: A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including a channel region and source and drain regions, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the gate electrode and the semiconductor layer to electrically insulate the semiconductor layer from the gate electrode, a metal structure made up of metal layer, a metal silicide layer, or a double layer thereof disposed apart from the gate electrode over or under the semiconductor layer in a position corresponding to a region of the semiconductor layer other than a channel region, the structure being formed of the same material as the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer.

Abstract: A thin film transistor and method of fabricating the same are provided. The thin film transistor is characterized in that low angle grain boundaries formed in a channel layer in a semiconductor layer pattern is tilted ?15 to 15° with respect to a current flowing direction. The method includes: forming an amorphous silicon layer on a substrate; forming a first capping layer on the amorphous silicon layer; forming a second capping layer on the first capping layer, and patterning the second capping layer such that seeds are formed in a line shape; forming a metal catalyst layer on the patterned second capping layer; diffusing the metal catalyst; and crystallizing and patterning the amorphous silicon layer to form a semiconductor layer pattern. Thus, a channel layer having an angle nearly parallel to the current flowing direction may be formed in a low angle grain boundary by forming and crystallizing the line-shaped seeds.

Abstract: A thin film transistor includes a substrate, a semiconductor layer disposed on the substrate, including a channel region and source and drain regions and crystallized using a metal catalyst, a gate electrode disposed to correspond to a predetermined region of the semiconductor layer, a gate insulating layer disposed between the gate electrode and the semiconductor layer to insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer, respectively. The metal catalyst within 150 ? from a surface of the semiconductor layer in a vertical direction is formed to have a concentration exceeding 0 and not exceeding 6.5×E17 atoms per cm3 in the channel region of the semiconductor layer. An organic light emitting diode (OLED) display device includes the thin film transistor.

Abstract: A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a thickness of about 10 to 50 ? on the a-Si layer, forming a metal catalyst layer on the thermal oxide layer, and annealing the substrate to crystallize the a-Si layer into the poly-Si layer using a metal catalyst of the metal catalyst layer. Thus, the a-Si layer can be crystallized into a poly-Si layer by a super grain silicon (SGS) crystallization method. Also, the thermal oxide layer may be formed during the dehydrogenation of the a-Si layer so that an additional process of forming a capping layer required for the SGS crystallization method can be omitted, thereby simplifying the fabrication process.

Abstract: A thin film transistor (TFT), a method of fabricating the TFT, and a display device including the TFT are provided. The TFT includes a semiconductor layer having a channel region and source and drain regions is crystallized using a crystallization-inducing metal. The crystallization-inducing metal is gettered by either a metal other than the crystallization-inducing metal or a metal silicide of a metal other than the crystallization-inducing metal. A length and width of the channel region of the semiconductor layer and a leakage current of the semiconductor layer satisfy the following equation: Ioff/W=3.4E-15 L2+2.4E-12 L+c, wherein Ioff (A) is the leakage current of the semiconductor layer, W (mm) is the width of the channel region, L(?m) is the length of the channel region, and “c” is a constant ranging from 2.5E-13 to 6.8E-13.

Abstract: A method of fabricating a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal; forming a metal layer pattern or metal silicide layer pattern in contact with an upper or lower region of the polycrystalline silicon layer corresponding to a region excluding a channel region in the polycrystalline silicon layer; and annealing the substrate to getter the crystallization-inducing metal existing in the channel region of the polycrystalline silicon layer to the region in the polycrystalline silicon layer having the metal layer pattern or metal silicide layer pattern. Accordingly, the crystallization-inducing metal existing in the channel region of the polycrystalline silicon layer can be effectively removed, and thus a thin film transistor having an improved leakage current characteristic and an OLED display device including the same can be fabricated.

Abstract: A semiconductor device in which a semiconductor layer of a thin film transistor and a first electrode of a capacitor are formed of amorphous silicon and the whole or a part of source/drain regions of the semiconductor layer and the first electrode of the capacitor are crystallized by a metal induced crystallization method, and a channel region of the semiconductor layer is crystallized by a metal induced lateral crystallization method.

Abstract: The present invention discloses a thin film transistor and a method of fabricating the same. The thin film transistor includes an insulating substrate; and a semiconductor layer, a gate insulating layer, a gate electrode, an interlayer insulator, and a source/drain electrode which are formed on the substrate, wherein the gate insulating layer is formed of a filtering oxide layer having a thickness of 1 to 20 ?.

Abstract: A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having a first impurity formed at edges of the source and drain regions, and optionally, in the channel region; a gate insulating layer insulating the semiconductor layer; a gate electrode insulated from the semiconductor layer by the gate insulating layer; and source and drain electrodes electrically connected to the semiconductor layer.