Patents by Inventor Byoung-Kook Lee

Byoung-Kook Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090049268
    Abstract: Provided are a portable storage device and a method of managing a resource of the portable storage device. The method includes converting a first DRM application into a ready status from an idle status if task processing of the first DRM application is required, and converting the first DRM application into a pending status and a second DRM application into the ready status from the idle status if task processing of the second DRM application is required.
    Type: Application
    Filed: August 15, 2008
    Publication date: February 19, 2009
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ji-Soo KIM, Seon-Taek Kim, Byung-Gook Kim, Byoung-Kook Lee, Chan-Ik Park
  • Patent number: 7453712
    Abstract: A hybrid flash memory device includes an array including a first area and a second area having a larger number of stored bits per cell than the first area. The device includes a hidden area including a first reserved block area and a second reserved block area, wherein the first reserved block area includes a plurality of first memory blocks having the same number of stored bits per cell as the first area, the second reserved block area includes a plurality of second memory blocks having the same number of stored bits per cell as the second area, and a flash translation layer configured to replace a bad block generated in the first main area with the first memory block and replace a bad block generated in the second main area with the second memory block, wherein the flash translation layer flexibly assigns functions of the first memory blocks or the second memory blocks depending on whether the first and second memory blocks are all used.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: November 18, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seon-Taek Kim, Byoung-Kook Lee
  • Publication number: 20080195802
    Abstract: A system and method for searching a mapping table of a flash memory is provided. The system includes at least one random access memory for storing the mapping table retrieved from the flash memory and at least one search engine for searching for data from the mapping table stored in the at least one random access memory using dedicated hardware. Thus, the search efficiency for the mapping table and system performance may be increased.
    Type: Application
    Filed: February 6, 2008
    Publication date: August 14, 2008
    Inventors: Byoung-Kook Lee, Jeong-Woo Lee
  • Publication number: 20080195803
    Abstract: A method for reducing a memory map table search time when employing a semiconductor memory device as a temporary memory of large capacity storage device, and a semiconductor memory device therefore, are provided. A MAP RAM is prepared for storing map table data related to the nonvolatile memory area in the volatile memory area. At an initial power-up operation, it is determined whether a logical address is searched for from the map table data while the map table data existing in a map storage area of the nonvolatile memory area is loaded into the MAP RAM. A physical address corresponding to the logical address is provided as an output, when the logical address is searched for. Search time for a memory map table is reduced and read performance in a high speed map information search is increased.
    Type: Application
    Filed: February 12, 2008
    Publication date: August 14, 2008
    Inventors: Chan-Ik PARK, Jin-Wook LEE, Byoung-Kook LEE
  • Publication number: 20080112238
    Abstract: A hybrid flash memory device includes an array including a first area and a second area having a larger number of stored bits per cell than the first area The device includes a hidden area including a first reserved block area and a second reserved block area, wherein the first reserved block area includes a plurality of first memory blocks having the same number of stored bits per cell as the first area, the second reserved block area includes a plurality of second memory blocks having the same number of stored bits per cell as the second area, and a flash translation layer configured to replace a bad block generated in the first main area with the first memory block and replace a bad block generated in the second main area with the second memory block, wherein the flash translation layer flexibly assigns functions of the first memory blocks or the second memory blocks depending on whether the first and second memory blocks are all used.
    Type: Application
    Filed: December 20, 2006
    Publication date: May 15, 2008
    Inventors: Seon-Taek Kim, Byoung-Kook Lee