Patents by Inventor Byoung-Kwan Ahn

Byoung-Kwan Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing a semiconductor device for use in a memory cell that includes forming a composite layer of tantalum oxide and titanium oxide over a bottom capacitor electrode
    Patent number: 7012001
    Abstract: A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of bottom electrodes formed on top of the conductive plugs, composite films formed on the bottom electrodes and Al2O3 films formed on the composite films. In the device, the composite films are made of (Ta2O5)0.92 (TiO2)0.08 by using an atomic layer deposition (ALD).
    Type: Grant
    Filed: December 8, 2003
    Date of Patent: March 14, 2006
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Ki-Seon Park, Byoung-Kwan Ahn
  • Semiconductor device incorporated therein high K capacitor dielectric and method for the manufacture thereof
    Publication number: 20040082126
    Abstract: A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of bottom electrodes formed on top of the conductive plugs, composite films formed on the bottom electrodes and A2O3 films formed on the composite films. In the device, the composite films are made of (Ta2O5)0.92 (TiO2)0.08 by using an atomic layer deposition (ALD).
    Type: Application
    Filed: December 8, 2003
    Publication date: April 29, 2004
    Applicant: Hyundai Electronics Industries Co., Ltd.
    Inventors: Ki-Seon Park, Byoung-Kwan Ahn
  • Semiconductor device having a capacitor with a multi-layer dielectric
    Patent number: 6690052
    Abstract: A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of bottom electrodes formed on top of the conductive plugs, composite films formed on the bottom electrodes and Al2O3 films formed on the composite films. In the device, the composite films are made of (Ta2O5)0.92(TiO2)0.08 by using an atomic layer deposition(ALD).
    Type: Grant
    Filed: December 20, 2000
    Date of Patent: February 10, 2004
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Ki-Seon Park, Byoung-Kwan Ahn
  • Semiconductor device incorporated therein high K capacitor dielectric and method for the manufacture thereof
    Publication number: 20020020869
    Abstract: A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of bottom electrodes formed on top of the conductive plugs, composite films formed on the bottom electrodes and Al2O3 films formed on the composite films. In the device, the composite films are made of (Ta2O5)0.92(TiO2)0.08 by using an atomic layer deposition (ALD).
    Type: Application
    Filed: December 20, 2000
    Publication date: February 21, 2002
    Inventors: Ki-Seon Park, Byoung-Kwan Ahn