Abstract: Disclosed is a method for forming a capacitor of a semiconductor device. The forming method comprises the step of forming an interlayer insulating film on a semiconductor substrate formed with a bit line. A contact plug to be in contact with the substrate is formed within the interlayer insulating film. A storage electrode is formed on the interlayer insulating film in such a manner that the storage electrode comes in contact with the contact plug. A dielectric film composed of a single composite film of Ta2O5(X)Y2O3(1?X) is also formed on the storage electrode according to ALD (Atomic Layer Deposition) technology. A diffusion barrier film is deposited on the dielectric film, and a plate electrode is formed on the diffusion barrier film. The present invention can provide a capacitor having sufficient capacitance necessary for a stable device operation by applying the Ta2O5(X)Y2O3(1?X) single composite film to the dielectric film.

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: A method for fabricating capacitor capable of simplifying formation processes of ruthenium (Ru) layer for storage node electrode formation of capacitor comprises the steps of: forming a first insulating layer having a first opening exposing a predetermined region on a substrate; forming a conductive plug filled within the first opening; forming a second insulating layer having a second opening exposing the conductive plug on the first insulating layer; forming a conductive layer covering the second opening by sequentially performing PECVD and LPCVD processes on the second insulating layer; exposing the second insulating layer by performing etch back on the conductive layer; forming a storage node electrode of the capacitor by removing the second insulating layer; and forming a dielectric layer to cover the storage node electrode; and forming a plate electrode. In an alternative embodiment, a thermal treatment under an N2 gas supply is performed after the step of forming the conductive layer.

Abstract: Disclosed is a method for forming a capacitor of a semiconductor device. The forming method comprises the step of forming an interlayer insulating film on a semiconductor substrate formed with a bit line. A contact plug to be in contact with the substrate is formed within the interlayer insulating film. A storage electrode is formed on the interlayer insulating film in such a manner that the storage electrode comes in contact with the contact plug. A dielectric film composed of a single composite film of Ta2O5(X)Y2O3(1-X) is also formed on the storage electrode according to ALD (Atomic Layer Deposition) technology. A diffusion barrier film is deposited on the dielectric film, and a plate electrode is formed on the diffusion barrier film. The present invention can provide a capacitor having sufficient capacitance necessary for a stable device operation by applying the Ta2O5(X)Y2O3(1-X) single composite film to the dielectric film.

Abstract: In the capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2O3 film is formed over the TaON film, and an upper electrode is formed over the Al2O3 film.

Abstract: A capacitor for a semiconductor device is manufactured by forming a lower structure on a semiconductor device, forming a lower electrode on the lower structure of the semiconductor device, forming a dielectric thin film by depositing an amorphous TaON film on the surface of the lower electrode, and supplying a Ta source gas in a mono-pulse manner and continuously supplying a reaction gas even when the Ta source gas is not supplied, and forming an upper electrode on the upper portion of the dielectric thin film.

Abstract: A capacitor in a semiconductor device and fabricating method therefor are disclosed, in which the capacitor in a semiconductor device comprises: a semiconductor substrate, a first Ru film formed on the semiconductor substrate, a Y2O3 film formed on the first Ru film, a TiON film formed on the Y2O3 film, and a second Ru film formed on the TiON film; and the method for fabricating a capacitor in a semiconductor device comprising the steps of: providing a semiconductor substrate, forming a first Ru film on the semiconductor substrate, forming a Y2O3 film on the first Ru film, forming a TiON film on the Y2O3 film, and forming a second Ru film on the TiON film.

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: A capacitor in a semiconductor device and fabricating method therefor are disclosed, in which the capacitor in a semiconductor device comprises: a semiconductor substrate, a first Ru film formed on the semiconductor substrate, a Y2O3 film formed on the first Ru film, a TiON film formed on the Y2O3 film, and a second Ru film formed on the TiON film; and the method for fabricating a capacitor in a semiconductor device comprising the steps of: providing a semiconductor substrate, forming a first Ru film on the semiconductor substrate, forming a Y2O3 film on the first Ru film, forming a TiON film on the Y2O3 film, and forming a second Ru film on the TiON film.

Abstract: A method for forming a cell capacitor used for a high-integrated DRAM is disclosed which guarantees interfacial properties of aluminum oxide and excellent leakage current preventive properties by depositing an aluminum oxide layer and a mixed layer of TiON and TiO2 as dielectric layers on a semiconductor substrate having a predetermined lower substructure by an atomic layer deposition (ALD) method and thus forming a double layer structure, and simultaneously providing a high capacitance by using a high dielectric property of a mixed layer of TiON and TiO2.

Abstract: A method for fabricating capacitor capable of simplifying formation processes of ruthenium (Ru) layer for storage node electrode formation of capacitor comprises the steps of: forming a first insulating layer having a first opening exposing a predetermined region on a substrate; forming a conductive plug filled within the first opening; forming a second insulating layer having a second opening exposing the conductive plug on the first insulating layer; forming a conductive layer covering the second opening by sequentially performing PECVD and LPCVD processes on the second insulating layer; exposing the second insulating layer by performing etch back on the conductive layer; forming a storage node electrode of the capacitor by removing the second insulating layer; and forming a dielectric layer to cover the storage node electrode; and forming a plate electrode. In an alternative embodiment, a thermal treatment under an N2 gas supply is performed after the step of forming the conductive layer.

Abstract: In the capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2O3 film is formed over the TaON film, and an upper electrode is formed over the Al2O3 film.

Abstract: In the method for manufacturing a capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2O3 film is formed over the TaON film, and an upper electrode is formed over the Al2O3 film.

Abstract: A method for forming a cell capacitor used for a high-integrated DRAM is disclosed which guarantees interfacial properties of aluminum oxide and excellent leakage current preventive properties by depositing an aluminum oxide layer and a mixed layer of TiON and TiO2 as dielectric layers on a semiconductor substrate having a predetermined lower substructure by an atomic layer deposition (ALD) method and thus forming a double layer structure, and simultaneously providing a high capacitance by using a high dielectric property of a mixed layer of TiON and TiO2.

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: In the method for manufacturing a capacitor in a semiconductor device, a nitride film is formed over a lower electrode on a semiconductor substrate, and a TaON film is formed over the nitride film. The Al2O3 film is formed over the TaON film, and an upper electrode is formed over the Al2O3 film.

Abstract: A capacitor for a semiconductor device is manufactured by forming a lower structure on a semiconductor device, forming a lower electrode on the lower structure of the semiconductor device, forming a dielectric thin film by depositing an amorphous TaON film on the surface of the lower electrode, and supplying a Ta source gas in a mono-pulse manner and continuously supplying a reaction gas even when the Ta source gas is not supplied, and forming an upper electrode on the upper portion of the dielectric thin film.