Abstract: A light-emitting device and a light-emitting apparatus using the same. The light-emitting device includes an n-type or p-type substrate, a doped region formed on a first surface of the substrate with a predetermined dopant to be an opposite type from that of the substrate, to an ultra-shallow depth such that light is emitted from a p-n junction between the doped region and the substrate by a quantum confinement effect, a resonator which improves the selectivity of wavelength of the light emitted from the p-n junction, and first and second electrodes formed on the first surface and a second surface of the substrate, respectively, for injection of holes and electrons. The light-emitting device includes the ultra-shallow doped region so that it can emit light with a quantum confinement effect in the p-n junction.

Abstract: A multiple wavelength surface-emitting laser device equipped with a substrate and a plurality of surface-emitting lasers formed on the substrate by a continuous manufacturing process is provided. Each surface-emitting laser includes a bottom reflection layer on the substrate, that is doped with impurities of one type and composed of alternating semiconductor material layers having different refractive indexes; an active layer that is formed on the bottom reflection layer; an intermediate layer that is doped with impurities of the other type on the active layer; a top electrode that is formed on the intermediate layer to have a window through which light is emitted; and a dielectric reflection layer where dielectric materials with different refractive indexes are alternately layered on the intermediate layer and/or the top electrode to a thickness suitable for a desired resonance wavelength, and the resonance wavelength is controlled by adjusting the thickness of the dielectric reflection layer.

Abstract: A cold cathode electron emission device activating electron emission applying an external electric field is provided, in which an inversion layer inverting the type of a semiconductor layer by an external electric field is generated to form a shallow channel, and an electron beam due to a number of electrons is emitted by an avalanche breakdown in the shallow channel. A single or plurality of active regions are formed in the upper portion of the semiconductor substrate in fabrication and then an inversion layer is formed by the external electric field. The cold cathode electron emission device is driven according to the principle that a number of electrons are emitted by the avalanche breakdown in the inversion layer. Thus, since the high-density electrons are instantaneously emitted at the inversion layer by the external electric field, a preheating is not required.

Abstract: An apparatus for jetting ink utilizing a lamb wave and a method for producing the same, the apparatus including an ink chamber having nozzles, and an ejecting force source for supplying an ejecting force to eject the ink out of the nozzles. The ejecting force source includes inter-digital transducer electrodes for applying a voltage of a predetermined voltage, a piezoelectric element for generating the lamb wave by means of the voltage applied from the inter-digital transducer electrodes. Thus, as the voltage is applied to the inter-digital transducer electrodes, the lamb wave is generated from the lamb wave generating board, and the ink reserved in the ink chamber is ejected out of the nozzles.