Patents by Inventor Byoung Ock Song

Byoung Ock Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6579757
    Abstract: A method of fabricating a semiconductor device, includes the steps of forming gates in a cell region and in a peripheral region of a substrate, forming a polysilicon layer over an entire surface of the resultant structure, partially removing portions of the polysilicon layer in the cell region to maintain the polysilicon layer of a predetermined thickness in the cell region, removing the predetermined thickness of the polysilicon layer both in the cell and peripheral regions, so that the resultant structure includes exposed gates in the cell region but no exposed gates in the peripheral region, and forming an insulating layer over the resultant structure.
    Type: Grant
    Filed: November 21, 2001
    Date of Patent: June 17, 2003
    Assignee: Hynix Semiconductor Inc.
    Inventors: Jae Hyung Kim, Sang Gi Ko, Byoung Ock Song, Hee Joong Oh
  • Publication number: 20020061616
    Abstract: A method of fabricating a semiconductor device, includes the steps of forming gates in a cell region and in a peripheral region of a substrate, forming a polysilicon layer over an entire surface of the resultant structure, partially removing portions of the polysilicon layer in the cell region to maintain the polysilicon layer of a predetermined thickness in the cell region, removing the predetermined thickness of the polysilicon layer both in the cell and peripheral regions, so that the resultant structure includes exposed gates in the cell region but no exposed gates in the peripheral region, and forming an insulating layer over the resultant structure.
    Type: Application
    Filed: November 21, 2001
    Publication date: May 23, 2002
    Inventors: Jae Hyung Kim, Sang Gi Ko, Byoung Ock Song, Hee Joong Oh