Patents by Inventor Byoung Ok Song

Byoung Ok Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase change RAM device with increased contact area between word line and active area
    Patent number: 7470924
    Abstract: A phase change RAM device, has a first metal wiring for a bit line that is separated from a second metal wiring for applying a supply voltage. A method for fabricating the phase change RAM device includes the steps of forming an isolation layer formed so as to define a T-shaped active area in the semiconductor substrate, forming a word line formed on the active area of the semiconductor substrate including the isolation layer, forming source/drain areas formed at both sides of the word line in the active area, forming an insulating interlayer on entire surface of the semiconductor substrate so as to cover the word line, and forming a first tungsten plug in a portion of the insulating interlayer on the source area and a second tungsten plug in a portion of the insulating interlayer on the drain area.
    Type: Grant
    Filed: May 23, 2006
    Date of Patent: December 30, 2008
    Assignee: Hynix Semiconductor Inc.
    Inventors: Heon Yong Chang, Byoung Ok Song
  • Phase change RAM device and method for fabricating the same
    Publication number: 20060270102
    Abstract: A phase change RAM device, has a first metal wiring for a bit line that is separated from a second metal wiring for applying a supply voltage. A method for fabricating the phase change RAM device includes the steps of forming an isolation layer formed so as to define a T-shaped active area in the semiconductor substrate, forming a word line formed on the active area of the semiconductor substrate including the isolation layer, forming source/drain areas formed at both sides of the word line in the active area, forming an insulating interlayer on entire surface of the semiconductor substrate so as to cover the word line, and forming a first tungsten plug in a portion of the insulating interlayer on the source area and a second tungsten plug in a portion of the insulating interlayer on the drain area.
    Type: Application
    Filed: May 23, 2006
    Publication date: November 30, 2006
    Inventors: Heon Yong Chang, Byoung Ok Song