Patents by Inventor Byoung Wook Jeong

Byoung Wook Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 10741659
    Abstract: A semiconductor device comprising a first field insulating film around at least a part of a first fin type pattern and at least a part of a second fin type pattern, a second field insulating film between the first fin type pattern and the second fin type pattern and protruding from the first field insulating film and a first gate structure which extends over the first and second field insulating films in a second direction intersecting with a first direction, and includes a first portion on the first field insulating film, and a second portion on the second field insulating film, wherein a first width of the first portion of the first gate structure is greater than a second width of the second portion of the first gate structure.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: August 11, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chang Seop Yoon, Byoung Wook Jeong
  • SEMICONDUCTOR DEVICE
    Publication number: 20190326407
    Abstract: A semiconductor device comprising a first field insulating film around at least a part of a first fin type pattern and at least a part of a second fin type pattern, a second field insulating film between the first fin type pattern and the second fin type pattern and protruding from the first field insulating film and a first gate structure which extends over the first and second field insulating films in a second direction intersecting with a first direction, and includes a first portion on the first field insulating film, and a second portion on the second field insulating film, wherein a first width of the first portion of the first gate structure is greater than a second width of the second portion of the first gate structure.
    Type: Application
    Filed: November 27, 2018
    Publication date: October 24, 2019
    Applicant: Samsung Electronics Co.,Ltd.
    Inventors: Chang Seop YOON, Byoung Wook Jeong