Abstract: A logic book for a programmable device such as an application-specific integrated circuit (ASIC) achieves improved radiation tolerance by providing transistors of the same doping type in different well regions that are physically isolated by intervening well regions with complementary doping. For example, n-type field effect transistors (NFETs) may be located in two outer rows of the book with separate Pwell regions, while p-type transistors are located in two inner rows of the book sharing a common Nwell region. Since the NFETs in separate wells are physically isolated from each other, a circuit structure which uses two NFETs in the two outer rows is much less likely to suffer multiple upsets from a single radiation strike. More complicated embodiments of the present invention include additional transistor rows in the stack with isolated Nwells and Pwells.

Abstract: A method and a Dual Interlocked Storage Cell (DICE) latch implementing enhanced testability includes an L1 latch and an L2 latch coupled to the L1 latch. Each L1 latch and each L2 latch includes redundant latch structures. A separate output is provided with the redundant L2 latch. The DICE latch includes a Redundant Test Latch Enable (RTLE) input. Each L1 latch and each L2 latch includes a path selector control in the redundant latch structures controlled by the RTLE input providing each of the redundant latch structures in a scan path during a test mode.

Abstract: A method and Dual Interlocked Storage Cell (DICE) latch for implementing enhanced testability, and a design structure on which the subject DICE latch circuit resides are provided. DICE latch includes an L1 latch and an L2 latch are coupled to the L1 latch. Each L1 latch and each L2 latch includes redundant latch structures. A separate output is provided with the redundant L2 latch. The DICE latch includes a Redundant Test Latch Enable (RTLE) input. Each L1 latch and each L2 latch includes a path selector control in the redundant latch structures controlled by the RTLE input providing each of the redundant latch structures in a scan path during a test mode.

Abstract: A logic book for a programmable device such as an application-specific integrated circuit (ASIC) achieves improved radiation tolerance by providing transistors of the same doping type in different well regions that are physically isolated by intervening well regions with complementary doping. For example, n-type field effect transistors (NFETs) may be located in two outer rows of the book with separate Pwell regions, while p-type transistors are located in two inner rows of the book sharing a common Nwell region. Since the NFETs in separate wells are physically isolated from each other, a circuit structure which uses two NFETs in the two outer rows is much less likely to suffer multiple upsets from a single radiation strike. More complicated embodiments of the present invention include additional transistor rows in the stack with isolated Nwells and Pwells.

Abstract: A method and Dual Interlocked Storage Cell (DICE) latch for implementing enhanced testability, and a design structure on which the subject DICE latch circuit resides are provided. DICE latch includes an L1 latch and an L2 latch are coupled to the L1 latch. Each L1 latch and each L2 latch includes redundant latch structures. A separate output is provided with the redundant L2 latch. The DICE latch includes a Redundant Test Latch Enable (RTLE) input. Each L1 latch and each L2 latch includes a path selector control in the redundant latch structures controlled by the RTLE input providing each of the redundant latch structures in a scan path during a test mode.

Abstract: A method and a Dual Interlocked Storage Cell (DICE) latch implementing enhanced testability includes an L1 latch and an L2 latch coupled to the L1 latch. Each L1 latch and each L2 latch includes redundant latch structures. A separate output is provided with the redundant L2 latch. The DICE latch includes a Redundant Test Latch Enable (RTLE) input. Each L1 latch and each L2 latch includes a path selector control in the redundant latch structures controlled by the RTLE input providing each of the redundant latch structures in a scan path during a test mode.

Abstract: A method is disclosed wherein a subset of logic blocks on an ASIC simiconductor logic chip is examined for replacement by functionally equivalent logic blocks in the ASIC library. The functionally equivalent logic block replacements are designed to exhibit, on average, significantly less subthreshold leakage currents. The replacement blocks are slower performing blocks, and therefore, checks are made to ensure that timing requirements are not violated.

Abstract: A method is disclosed wherein a subset of logic blocks on an ASIC simiconductor logic chip is examined for replacement by functionally equivalent logic blocks in the ASIC library. The functionally equivalent logic block replacements are designed to exhibit, on average, significantly less subthreshold leakage currents. The replacement blocks are slower performing blocks, and therefore, checks are made to ensure that timing requirements are not violated.