Abstract: Forming an integrated circuit, for example by first, concurrently forming a first front end of line (FEOL) layer having a first thickness and a surface contacting or facing a semiconductor substrate frontside and a second FEOL layer, having a second thickness and including a same material as the first FEOL layer and having a surface contacting or facing a semiconductor substrate backside, and second, processing the second FEOL layer to reduce the second thickness.

Abstract: A semiconductor device includes a trench extending into a semiconductor layer. A liner layer is on a sidewall of the semiconductor layer within the trench. The liner layer extends from the sidewall to a top surface of the semiconductor layer. An isolation structure is within the trench. The isolation structure is between a first region of the semiconductor layer and a second region of the semiconductor layer. The semiconductor layer includes a third region that couples the first region to the second region of the semiconductor layer. The third region of the semiconductor layer is substantially free of phosphorus contamination.

Abstract: Forming an integrated circuit, for example by first, concurrently forming a first front end of line (FEOL) layer having a first thickness and a surface contacting or facing a semiconductor substrate frontside and a second FEOL layer, having a second thickness and including a same material as the first FEOL layer and having a surface contacting or facing a semiconductor substrate backside, and second, processing the second FEOL layer to reduce the second thickness.

Abstract: A method of forming an integrated circuit includes forming a first layer having a first material type over a first side of a semiconductor wafer. A second layer having a second different material type is removed from a second opposing side of the semiconductor wafer using a first process that removes the second material type at a greater rate than the first material type. Subsequent to removing the second layer, the first layer is removed using a second different process.

Abstract: A method of forming an integrated circuit includes forming a first layer having a first material type over a first side of a semiconductor wafer. A second layer having a second different material type is removed from a second opposing side of the semiconductor wafer using a first process that removes the second material type at a greater rate than the first material type. Subsequent to removing the second layer, the first layer is removed using a second different process.

Abstract: An integrated circuit is formed by identifying process parameters of a plurality of process steps for the first partial lot containing the integrated circuit; confirming the number of wafers in the first partial lot is less than the wafer carrier capacity; examining lots upstream of the partial lot and identifying a second partial lot which can be combined with the first partial lot into a single wafer carrier and which can be processed with the first partial lot; combining the wafers of the partial lots into a single wafer carrier; processing the partial lots through the plurality of process steps; and performing a multi-lot verification process. The multi-lot verification process determines if all wafers in the partial lots have completed the process step; determines if any wafers in the partial lots are on hold; and determining if all wafers in the partial lots are in a same material carrier.

Abstract: An integrated circuit is formed by identifying process parameters of a plurality of process steps for the first partial lot containing the integrated circuit; confirming the number of wafers in the first partial lot is less than the wafer carrier capacity; examining lots upstream of the partial lot and identifying a second partial lot which can be combined with the first partial lot into a single wafer carrier and which can be processed with the first partial lot; combining the wafers of the partial lots into a single wafer carrier; processing the partial lots through the plurality of process steps; and performing a multi-lot verification process. The multi-lot verification process determines if all wafers in the partial lots have completed the process step; determines if any wafers in the partial lots are on hold; and determining if all wafers in the partial lots are in a same material carrier.

Abstract: Disclosed are a semiconductor wafer (10) having a front side laser scribe (22) and the methods for manufacturing the same. The methods of the invention include the formation of a scribe foundation (12) on the front side of the semiconductor wafer (10) designed to accept laser scribing (22), and laser scribing the scribe foundation (12). Disclosed embodiments include a semiconductor wafer (10) having a scribe foundation (12) of layered dielectric (30) and metal (34) on the front side. According to disclosed embodiments of the invention, the formation of a scribe foundation (12) is performed in combination with the formation of a top level metal layer (34) on the semiconductor wafer (10) methods for manufacturing.

Abstract: Disclosed are a semiconductor wafer (10) having a front side laser scribe (22) and the methods for manufacturing the same. The methods of the invention include the formation of a scribe foundation (12) on the front side of the semiconductor wafer (10) designed to accept laser scribing (22), and laser scribing the scribe foundation (12). Disclosed embodiments include a semiconductor wafer (10) having a scribe foundation (12) of layered dielectric (30) and metal (34) on the front side. According to disclosed embodiments of the invention, the formation of a scribe foundation (12) is performed in combination with the formation of a top level metal layer (34) on the semiconductor wafer (10) methods for manufacturing.