Patents by Inventor Byung C. Ahn

Byung C. Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5560777
    Abstract: An apparatus for making a semiconductor at atmospheric pressure having a first electrode and second electrode which are adapted to receive an RF voltage to perform corona discharge, the first electrode and second electrode together forming a corona discharge chamber, a supporter for supporting a substrate below the discharge chamber, a gas supply system for supplying a reactive gas to the discharge chamber, and an exhaust system installed around the substrate supporter and the electrodes and adapted to prevent a substrate supported by the supporter from being contaminated by external air, wherein the gas supply system and gas exhaust system maintain a region above the supporter at atmospheric pressure during a corona discharge operation.
    Type: Grant
    Filed: May 5, 1995
    Date of Patent: October 1, 1996
    Assignee: Goldstar Co., Ltd.
    Inventor: Byung C. Ahn
  • Patent number: 5467882
    Abstract: A signal line structure for TFT-LCD and a method for fabricating the same are disclosed. The method comprises the steps of: forming a first metal and a second metal, in due order, on a glass substrate; defining the width (W.sub.1) of the second metal and subsequently, applying an etching process to the second metal; and depositing a third metal entirely on the resulting structure and defining the width (W.sub.2) of signal line so as to simultaneously remove the unnecessary portions of the first metal and said third metal. The signal line structure fabricated by the method is structured to comprise an insulating substrate; a first metal formed on the insulating substrate, having a good adhesiveness to said insulating substrate; a second metal formed on the first metal, having a low resistance; a third metal comprised of the same material that the first metal is, the third metal together with the first metal surrounding the second metal to prevent the oxidation of said second metal.
    Type: Grant
    Filed: October 29, 1993
    Date of Patent: November 21, 1995
    Assignee: Goldstar Co., Ltd.
    Inventor: Byung C. Ahn
  • Patent number: 5424103
    Abstract: A method for making a semiconductor, without using a vacuum pump or vacuum chamber, using corona discharge, which comprises the steps or: supplying a reactive gas to, at least, one electrode capable of generating corona discharge above a substrate with an RF power source under the atmosphere; irradiating ions or radicals resulted from the decomposition of said reactive gas by said corona discharge to said substrate; allowing said ions or radicals to be chemically reacted with said substrate or be diffused in said substrate.
    Type: Grant
    Filed: November 3, 1993
    Date of Patent: June 13, 1995
    Assignee: Goldstar Co., Ltd.
    Inventor: Byung C. Ahn