Abstract: Provided are a substrate treating apparatus and method of manufacturing a phase-change layer having superior deposition characteristics. The substrate treating method of manufacturing a phase-change memory includes forming a bottom electrode on a substrate on which a pattern is formed, performing surface treating for removing impurities generated or remaining on a surface of the substrate while the bottom electrode is formed, performing nitriding on the surface of the substrate from which the impurities are removed, and successively depositing a phase-change layer and a top electrode on the bottom electrode.

Abstract: Disclosed is a tumor surface dose enhancing radiotherapy apparatus using a magnetic field, including a radiation beam generating unit that irradiates a radiation beam towards a tumor of a patient, a magnetic field generating unit that forms a magnetic field that is parallel to the radiation beam between the radiation beam generating unit and the tumor of the patient, and a control unit that controls a surface dose of the tumor by adjusting an intensity and an effective area of the magnetic field of the magnetic field generating unit.

Abstract: Provided is a thin film vapor deposition method capable of implementing ALD or cyclic CVD without the need for operating a valve and vapor depositing a thin film with higher productivity over the conventional method. A thin film vapor deposition apparatus includes a substrate supporting portion having a plurality of substrate mounting portions; and a gas jetting portion comprising a source gas supplier, a reaction gas supplier, and a mixture gas supplier, provided at the upper portion of the substrate supporting portion in which the source gas supplier, the reaction gas supplier and the mixture gas supplier are radially placed, wherein the substrate supporting portion and the gas jetting portion are provided so as to be able to relatively rotate.

Abstract: Provided are a substrate treating apparatus and method of manufacturing a phase-change layer having superior deposition characteristics. The substrate treating method of manufacturing a phase-change memory includes forming a bottom electrode on a substrate on which a pattern is formed, performing surface treating for removing impurities generated or remaining on a surface of the substrate while the bottom electrode is formed, performing nitriding on the surface of the substrate from which the impurities are removed, and successively depositing a phase-change layer and a top electrode on the bottom electrode.

Abstract: A method and system are disclosed for estimating internal position information of a target in real-time based on a single gantry-mounted x-ray imager and a respiratory signal. The x-ray imaging is done periodically to limit radiation dosage. Initial parameters for the estimation model are determined in a pre-treatment session using four dimensional computed tomography (4D CT) in combination with a respiratory signal acquired from the patient. The model parameters are updated during treatment based on the periodic x-ray image data and the respiratory signal.

Abstract: Provided is a thin film vapor deposition method capable of implementing ALD or cyclic CVD without the need for operating a valve and vapor depositing a thin film with higher productivity over the conventional method. A thin film vapor deposition apparatus includes a substrate supporting portion having a plurality of substrate mounting portions; and a gas jetting portion comprising a source gas supplier, a reaction gas supplier, and a mixture gas supplier, provided at the upper portion of the substrate supporting portion in which the source gas supplier, the reaction gas supplier and the mixture gas supplier are radially placed, wherein the substrate supporting portion and the gas jetting portion are provided so as to be able to relatively rotate.

Abstract: There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.

Abstract: A method and system are disclosed for estimating internal position information of a target in real-time based on a single gantry-mounted x-ray imager and a respiratory signal. The x-ray imaging is done periodically to limit radiation dosage. Initial parameters for the estimation model are determined in a pre-treatment session using four dimensional computed tomography (4D CT) in combination with a respiratory signal acquired from the patient. The model parameters are updated during treatment based on the periodic x-ray image data and the respiratory signal.

Abstract: There is provided a method of depositing a Ge—Sb—Te thin film, including: a Ge—Sb—Te thin-film forming step of feeding and purging a first precursor including any one of Ge, Sb and Te, a second precursor including another one of Ge, Sb and Te and a third precursor including the other one of Ge, Sb and Te into and from a chamber in which a wafer is mounted and forming the Ge—Sb—Te thin film on the wafer; and a reaction gas feeding step of feeding reaction gas while any one of the first to third precursors is fed.

Abstract: Provided is a thin film deposition reactor. The reactor includes a reactor block including a wafer block on which a wafer is mounted; a top lid for covering and sealing the reactor block; a showerhead disposed under the top lid and connected to an RF power supply unit, the showerhead having first nozzles and second nozzles that are not combined with each other; a showerhead isolation assembly having a plurality of gas curtain holes for forming a gas curtain around the wafer block, the showerhead isolation assembly for isolating the top lid from the showerhead; a top lid isolation flow line disposed on the top lid, the top lid isolation flow line having a first flow line and a second flow line that are connected to the first nozzles and the second nozzles, respectively, and are each bent at a right angle at least once.

Abstract: Provided is a method of depositing an ALD thin film. The method includes (S1) loading a wafer on a wafer block; (S2) depositing the ALD thin film on the wafer; (S3) unloading the wafer, on which the ALD thin film is deposited, from the wafer block; (S4-1) loading a dummy wafer on the wafer block; (S4-2) stabilizing the flow rates and the pressures of gases in the reactor by spraying only an inert gas or a mixture of the inert gas and a cleaning gas in the reactor; (S4-3) supplying RF power to the showerhead so as to activate the cleaning gas and mostly removing a thin film deposited on a surface of the showerhead by using the activated cleaning gas; (S4-4) unloading the dummy wafer from the wafer block; (S4-5) repeating steps 4-1 through 4-4 at least once using new dummy wafers; and (S5) purging the inside of the reactor.

Abstract: Provided is a reaction chamber for depositing a thin film. The reaction chamber includes a reactor block; a wafer block located inside the reactor block; a top plate that covers the reactor block to maintain a predetermined pressure; a feeding unit which supplies reactive gases to the reactor block; a shower head, which is installed in the top plate and includes a plurality of first spray holes for spraying the first reactive gas on a wafer and a plurality of second spray holes for spraying the second reactive gas; and an exhaust unit which expels gases from the reactor block. The feeding unit includes a feeding block; a distributing block; two or more first gas transfer pipes; and a second gas transfer pipe. The shower head includes an upper diffusion block, an intermediate diffusion block, and a lower diffusion block.