Abstract: The present disclosure relates to a lithium secondary battery in which an abnormal voltage drop phenomenon is improved. The lithium secondary battery comprises a negative electrode comprising a negative electrode active material, a positive electrode comprising a positive electrode active material represented by Formula 1, a separator disposed between the positive electrode and the negative electrode, and a non-aqueous electrolyte solution, wherein the non-aqueous electrolyte solution comprises a lithium salt, a non-aqueous organic solvent, a compound represented by Formula 2 as a first additive, and lithium difluorophosphate as a second additive: LiaNixCOyM1zM2wO2??[Formula 1] wherein all the variables are described herein.

Abstract: The present disclosure provides a non-aqueous electrolyte including an additive for a non-aqueous electrolyte represented by Formula 1 below: wherein, R1 to R5 may each independently be any one selected from the group consisting of H, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an alkoxy group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, a cycloalkenyl group having 3 to 12 carbon atoms, and a nitrile group.

Abstract: The present disclosure discloses a flat substrate heating apparatus including a module support plate having a plurality of unit module regions placed on an upper surface thereof; a plurality of laser light source modules having a plurality of laser light source devices and seated on unit module regions of the module support plate, respectively; a power supply board placed below the module support plate and configured to supply power to the laser light source module; and an electrode terminal electrically connecting the laser light source module and the power supply board while detachably securing them to upper and lower surfaces of the module support plate.

Abstract: The present disclosure provides substrate heat-treating apparatus including a process chamber in which a flat substrate to be heat treated is placed, the process chamber comprising a beam irradiating plate placed below the flat substrate and an infrared transmitting plate placed above the flat substrate; a beam irradiating module for irradiating a laser beam to a lower surface of the flat substrate through the beam irradiating plate; and a gas circulation cooling module for spraying a cooling gas to an upper surface of the infrared transmitting plate, thereby cooling the infrared transmitting plate.

Abstract: The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

Abstract: The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

Abstract: The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

Abstract: The disclosure is directed to a method to recover the gate oxide integrity yield of a silicon wafer after rapid thermal anneal in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2. Generally, rapid thermal anneals in an ambient atmosphere comprising a nitrogen containing gas, such as NH3 or N2 to thereby imprint an oxygen precipitate profile can degrade the GOI yield of a silicon wafer by exposing as-grown crystal defects (oxygen precipitate) and vacancies generated by the silicon nitride film. The present invention restores GOI yield by stripping the silicon nitride layer, which is followed by wafer oxidation, which is followed by stripping the silicon oxide layer.

Abstract: Methods for producing single crystal silicon ingots with a reduced oxygen content toward the seed end of the ingot are disclosed. The methods may involve controlling growth conditions during crown formation and, in some embodiments, controlling the rate of crucible rotation during crown rotation to increase the time the crucible is rotated at or below a threshold value during crown growth.

Abstract: Disclosed herein is a multifunction lighting and audio apparatus. The apparatus includes a color-music file storage for storing color-music files; an output control unit for controlling the color-music data stored in the color-music file storage so as to separate the color-music data into music signals and color signals, and for producing the separated music signals and color signals; a lighting unit for producing color-lighting based on a color-lighting control signal inputted through the output control unit; an audio unit for producing music based on a music control signal inputted through the output control unit; and an operating unit for operating the above components respectively. It is possible to embody the optimal lighting and audio in which the music and lighting match each other, and to simplify an overall system structure, and decrease the system structure costs without requiring the conventional music parameter detection unit, etc.