Abstract: There is provided a semiconductor manufacturing apparatus comprising: a cassette station 16 in which wafers 18 are loaded; a stand-by conveying robot 10 for taking the wafers 18 out of the cassette station 16; a load lock chamber 12 in which the wafers 18 taken by the stand-by conveying robot 10 are accommodated; and a reaction chamber 14 placed in contact with the load lock chamber 12, the reaction chamber 14 having a shuttle blade 20 for drawing the wafers accommodated in the load lock chamber out of the load lock chamber 12 in a vacuum state and loading etched wafers in the load lock chamber, a rotary robot 26 for rotatively transferring the wafers taken out of the load lock chamber to be placed on the shuttle blade 20, and a heater stage 24 for etching the wafers transferred by the rotary robot 26 using a plasma generator 28, in which a pre-heating part 22 is placed above the shuttle blade 20, for pre-heating the wafers transferred into the reaction chamber 14 from the load lock chamber 12 before they are

Abstract: This invention provides a method for manufacturing a semiconductor device which prevents residues from remaining around an etching pattern of a poly-silicon by making the poly-silicon be gradiently etched out. An oxide barrier layer is deposited over a poly-silicon layer, and impurities are implanted through the oxide barrier layer, wherein the concentration difference of impurities makes the poly-silicon have a graded sidewalls, and the value of resistance is controlled by the quantity of impurities. After removing the oxide barrier layer the poly-silicon is selectively etched into a poly electrode having a graded sidewall. The thermal treatment of the poly electrode is carried out and a polysilicon for another electrode is deposited and etched out.