Abstract: A knee joint rehabilitation apparatus for a wheelchair includes a rehabilitation apparatus frame having a height corresponding to a length of each of legs of a patient sitting on the wheelchair; an upper leg support disposed at an upper end of the rehabilitation apparatus frame and supporting upper legs of the patient thereon while the patient is sitting on the wheelchair; a lower leg support pivotably connected to the upper leg support, wherein the lower legs of the patient are seated and supported on the lower leg support; and an exercise control unit disposed on the rehabilitation apparatus frame and configured to allow the lower leg support to pivot around a connection portion between the lower leg support and the upper leg support such that the patient performs rehabilitation exercise of the knee joint thereof while sitting on the wheelchair.

Abstract: The present disclosure relates to a lithium secondary battery in which an abnormal voltage drop phenomenon is improved. The lithium secondary battery comprises a negative electrode comprising a negative electrode active material, a positive electrode comprising a positive electrode active material represented by Formula 1, a separator disposed between the positive electrode and the negative electrode, and a non-aqueous electrolyte solution, wherein the non-aqueous electrolyte solution comprises a lithium salt, a non-aqueous organic solvent, a compound represented by Formula 2 as a first additive, and lithium difluorophosphate as a second additive: LiaNixCOyM1zM2wO2??[Formula 1] wherein all the variables are described herein.

Abstract: The present invention relates to antibody-drug conjugates (ADCs) wherein a plurality of active agents are conjugated to an antibody through at least one branched linker. The branched linker may comprise a branching unit, and two active agents are coupled to the branching unit through a secondary linker and the branching unit is coupled to the antibody by a primary linker. The active agents may be the same or different. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g., 2-4 branched linkers, which may each be coupled to a different C-terminal cysteine of a heavy or light chain of the antibody. The branched linker may comprise one active agent coupled to the branching unit by a first branch and a second branch that comprises a polyethylene glycol moiety coupled to the branching unit. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g.

Abstract: Disclosed is an exoskeleton-type rehabilitation robot system, including: a body part provided on a chair in which a user sits and provided with a robot arm capable of moving left or right based on the user seated on the chair; a conversion part configured to convert a position of the robot arm with respect to the body part; a driving part configured to articulate the robot arm with respect to the body part; and a controller configured to detect a change in a position of the robot arm and control a left or right driving mode of the driving part according to the position of the robot arm. In accordance with such a configuration, the exoskeleton-type rehabilitation robot system of the present invention is provided integrally with a chair, thereby having excellent space utilization. In addition, the user's initial preparation for rehabilitation training is simple, which can improve efficiency.

Abstract: A silicon solar cell with high photoelectric conversion efficiency is disclosed. A solar cell for converting light incident from an outside into electricity according to the present invention includes a substrate, a lower electrode, a ferroelectric layer, an auxiliary electrode, a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an upper electrode. The lower electrode is formed on the substrate. The ferroelectric layer is formed on the substrate and outside the lower electrode. The auxiliary electrode is formed on the ferroelectric layer. The first conductivity-type semiconductor layer is formed on the lower electrode and the auxiliary electrode. The second conductivity-type semiconductor layer is formed on the first conductivity-type semiconductor layer, and is composed of a semiconductor of a second conductivity type opposite to a first conductivity type.

Abstract: A silicon solar cell with high photoelectric conversion efficiency is disclosed. A solar cell for converting light incident from an outside into electricity according to the present invention includes a substrate, a lower electrode, a ferroelectric layer, an auxiliary electrode, a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an upper electrode. The lower electrode is formed on the substrate. The ferroelectric layer is formed on the substrate and outside the lower electrode. The auxiliary electrode is formed on the ferroelectric layer. The first conductivity-type semiconductor layer is formed on the lower electrode and the auxiliary electrode. The second conductivity-type semiconductor layer is formed on the first conductivity-type semiconductor layer, and is composed of a semiconductor of a second conductivity type opposite to a first conductivity type.

Abstract: Disclosed are a semiconductor device manufactured using a paper as a substrate and a method of manufacturing the same. According to an embodiment of the present invention, the semiconductor device is manufactured by using a paper including pulp as a raw material or paper as a substrate coated with a heat-resistant material such as silicon. According to the present invention, a metal wiring layer such as a gate electrode is formed on the paper substrate by using a vacuum deposition method, or the like and an insulating layer is stacked thereon.

Abstract: Disclosed relates to a ferroelectric memory device that is manufactured easily, operates at low voltage and has excellent data preservation period, and a method of manufacturing the same. In the present invention, a ferroelectric layer 60 is formed on a part corresponding to a channel region 4 on the silicon substrate 1. The ferroelectric layer 60 made of an organic material such as PVDF, etc. shows polarization characteristics at low voltage below 1V, and such polarization characteristics continue over a specific time period, not changed as time goes by. Accordingly, it is possible to manufacture a ferroelectric memory device that operates at low voltage and is manufactured with a simplified structure in a simplified method.

Abstract: Disclosed herein are a metal-ferroelectric-metal-substrate (MFMS) field-effect transistor (FET), an MFMS-ferroelectric memory device, and method of manufacturing the same. The MFMS-FET and the ferroelectric memory device in accordance with the present invention include: a substrate including source and drain regions, and a channel region formed therebetween; a buffer layer formed on the top of the channel region of the substrate; a ferroelectric layer formed on the buffer layer; and a gate electrode formed on the ferroelectric layer, wherein the buffer layer is formed of a conductive material.

Abstract: Disclosed herein are a ferroelectric material that can be effectively used in manufacturing various electric and electronic elements, and a method of forming a ferroelectric layer using the ferroelectric material. The ferroelectric material in accordance with the present invention is composed of a mixture of an inorganic ferroelectric material and an organic ferroelectric material. The method of forming a ferroelectric layer includes: preparing a mixed solution of an inorganic ferroelectric material and an organic material; forming a ferroelectric film by applying the mixed solution onto a substrate; and forming a ferroelectric layer by annealing the ferroelectric film.

Abstract: Disclosed herein are a field-effect transistor (FET), a ferroelectric memory device, and methods of manufacturing the same. The FET and the ferroelectric memory device in accordance with the present invention include: a substrate 1; source and drain regions 2 and 3 formed on the substrate; a channel layer 4 formed between the source and drain regions 2 and 3; and a ferroelectric layer 5 formed on the channel layer 4, the ferroelectric layer 5 being composed of a mixture of an inorganic ferroelectric material and an organic material. The ferroelectric layer 5 is formed in a manner that a mixed solution of an inorganic ferroelectric material and an organic material is applied onto the substrate and then subjected to annealing and etching processes.

Abstract: The present invention relates to a ferrodielectric memory device and a method for manufacturing the same that provide stable memory operations by considerably enhancing characteristics of hysteresis and remanent polarization in ferrodielectrics applied to memory devices. In the present invention, PVDF having a crystal structure of ?-phase is used as a ferrodielectric substance applied to the ferrodielectric memory. The PVDF membrane in accordance with the present invention has excellent hysteresis characteristics that show a polarization of about 5 ?C/cm2 or more at about 1V as the polarization is increased with increasing of an applied voltage in about 0 to 1V, and have another polarization of about ?5 ?C/cm2 or less at about ?1V as the polarization is decreased with decreasing of an applied voltage in about ?1V.

Abstract: Disclosed relates to a method of coating or stacking an organic material to form an organic layer on a semiconductor substrate such as silicon, GaAs, etc. In the present invention, a polished semiconductor substrate is soaked in silanes, KOH, or a mixed solution of H2SO4 and H2O2. As a result, H-groups or OH-groups are generated on the surface of the semiconductor surface, which results in van der Waals bonding or hydrogen bonding between the semiconductor substrate and the organic material, thus forming the organic layer on the semiconductor substrate.

Abstract: Disclosed relates to a ferroelectric memory device that is manufactured easily, operates at low voltage and has excellent data preservation period, and a method of manufacturing the same. In the present invention, a ferroelectric layer (60) is formed on a part corresponding to a channel region (4) on the silicon substrate (1). The ferroelectric layer (60) made of an organic material such as PVDF, etc. shows polarization characteristics at low voltage below 1V, and such polarization characteristics continue over a specific time period, not changed as time goes by. Accordingly, it is possible to manufacture a ferroelectric memory device that operates at low voltage and is manufactured with a simplified structure in a simplified method.

Abstract: Disclosed relates to an organic material for a ferroelectric semiconductor device, which can be effectively used as a dielectric material of the ferroelectric semiconductor device, such as PVDF, etc. The PVDF having four crystal structures of ?, ?, ?, and ? shows a good hysteresis characteristic in the crystal structure of ?-phase. A PVDF thin film having a crystal structure of ?-phase has excellent hysteresis characteristics that show a capacitance value is decreased with the increase of an applied voltage in about 0 to 1V and increased with the decrease of an applied voltage in about 0 to ?1V. A ferroelectric organic material having a crystal structure of ?-phase is used on a channel region (54) between source and drain regions (52 and 53) of a silicon substrate (51). As ferroelectric organic materials, polyvinylidene fluoride (PVDF), PVDF polymer, PVDF copolymer or PVDF terpolymer and, further, odd-numbered nylon, cyano-polymer and their polymer or copolymer, etc. may be used.