Abstract: A semiconductor device includes a first element separation structure, a second element separation structure, and a third element separation structure sequentially disposed along a first direction and extending in a second direction intersecting the first direction; a first active pattern extending in the first direction between the first element separation structure and the second element separation structure; a second active pattern extending in the first direction between the second element separation structure and the third element separation structure and separated from the first active pattern by the second element separation structure; a first gate electrode extending in the second direction on the first active pattern; and a plurality of second gate electrodes extending in the second direction on the second active pattern, wherein a width of the first active pattern in the second direction is greater than a width of the second active pattern in the second direction.

Abstract: A method of removing a metal substance in a petrochemical product including: supplying a petrochemical product stream to an incoming tank through a supply pipe, circulating the petrochemical product stream through an incoming tank circulation pipe, and removing a metal substance included in the petrochemical product stream using a magnetic filter; transporting the petrochemical product stream to an outgoing tank through an incoming tank discharge pipe which is branched from the incoming tank circulation pipe and connected to an outgoing tank; circulating the petrochemical product stream through an outgoing tank circulation pipe provided in the outgoing tank and removing the metal substance included in the petrochemical product stream using a magnetic filter; and transporting the petrochemical product stream to a branch pipe branched from the outgoing tank circulation pipe to remove the metal substance using an ion exchange resin filter.

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

Abstract: Provided is a imaging optical system for an image sensor. The imaging optical system includes a stop and a first lens sequentially arranged from an object side. The first lens has aspherical surfaces on both sides and has a positive refractive power, a first surface of the first lens which faces the object side is a convex surface and a second surface of the first lens which faces an image side is a convex surface.

Abstract: An imaging optical system for cameras comprising a stop, a first lens, a second lens, and a third lens in order from object side to image side. The first lens is convex at the object side, and has positive refractive power and both surfaces of which are aspherical. The second lens is convex at the image side and has negative refractive power. The third lens has a concave surface at its central portion facing the image side and a convex surface at its peripheral portions facing the image side. The imaging optical system satisfies the conditions of the following Inequalities: 0.8 < L 2 ? Y < 1 0.5 < fl f < 0.86 where L denotes the distance from the stop to the image focal point, 2Y denotes the diagonal length of the effective image surface, f denotes the overall focal distance of the imaging optical system, and f1 denotes the focal distance of the first lens.

Abstract: Provided is a imaging optical system for an image sensor. The imaging optical system includes a stop and a first lens sequentially arranged from an object side. The first lens has aspherical surfaces on both sides and has a positive refractive power, a first surface of the first lens which faces the object side is a convex surface and a second surface of the first lens which faces an image side is a convex surface.

Abstract: An imaging optical system for cameras comprising a stop, a first lens, a second lens, and a third lens in order from object side to image side. The first lens is convex at the object side, and has positive refractive power and both surfaces of which are aspherical. The second lens is convex at the image side and has negative refractive power. The third lens has a concave surface at its central portion facing the image side and a convex surface at its peripheral portions facing the image side. The imaging optical system satisfies the conditions of the following Inequalities: 0.8 < L 2 ? Y < 1 0.5 < fl f < 0.86 where L denotes the distance from the stop to the image focal point, 2Y denotes the diagonal length of the effective image surface, f denotes the overall focal distance of the imaging optical system, and f1 denotes the focal distance of the first lens.