Patents by Inventor Byung Hak Jeong
Byung Hak Jeong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11217724Abstract: A semiconductor device according to the present invention comprises: a conductive substrate; a semiconductor structure disposed on the conductive substrate and comprising a first conductive-type semiconductor layer, a second conductive-type semiconductor layer, and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; and a first electrode disposed on the semiconductor structure and electrically connected to the first conductive-type semiconductor layer, wherein the semiconductor structure further comprises a 1-1 conductive-type semiconductor layer between the first conductive-type semiconductor layer and the first electrode; and the top surface of the semiconductor structure comprises a flat part, on which the first electrode is disposed, and a concave-convex part surrounding the flat part, wherein a second distance, which is from the bottom surface of the semiconductor structure to the bottom surface of the concave-convex part contType: GrantFiled: June 7, 2018Date of Patent: January 4, 2022Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Duk Hyun Park, Byung Hak Jeong
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Publication number: 20210288219Abstract: An embodiment provides a semiconductor device comprising: a substrate; a bonding layer disposed on the substrate; an electrode layer disposed on the bonding layer; a semiconductor structure disposed on the electrode layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer includes a through-hole, and the second electrode is disposed in the through-hole so as to be electrically connected to the electrode layer.Type: ApplicationFiled: July 2, 2019Publication date: September 16, 2021Applicant: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Duk Hyun PARK, Byung Hak JEONG, Jee Yun LEE
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Patent number: 10636943Abstract: A light emitting device of an embodiment comprises: a lower electrode; a light emitting structure disposed on the lower electrode and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an upper electrode pad disposed on the light emitting structure; at least one branch electrode connected to the upper electrode pad; and an upper ohmic layer disposed below the at least one branch electrode, wherein the upper electrode pad may include at least one connecting electrode connected to at least one branch electrode, and at least one connecting electrode may be integrally formed with the upper electrode pad and may project at certain intervals from a side surface of the upper electrode pad.Type: GrantFiled: August 5, 2016Date of Patent: April 28, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Duk Hyun Park, Sung Wook Moon, Sang Rock Park, Byung Hak Jeong
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Patent number: 10615311Abstract: An embodiment discloses a light emitting device and a display comprising the same.Type: GrantFiled: April 21, 2017Date of Patent: April 7, 2020Assignee: LG INNOTEK CO., LTD.Inventors: Duk Hyun Park, Eun Bin Ko, Sung Wook Moon, Sang Rock Park, Young Kuen Jung, Ki Yong Hong, Byung Hak Jeong
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Publication number: 20200035859Abstract: A semiconductor device according to the present invention comprises: a conductive substrate; a semiconductor structure disposed on the conductive substrate and comprising a first conductive-type semiconductor layer, a second conductive-type semiconductor layer, and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer; and a first electrode disposed on the semiconductor structure and electrically connected to the first conductive-type semiconductor layer, wherein the semiconductor structure further comprises a 1-1 conductive-type semiconductor layer between the first conductive-type semiconductor layer and the first electrode; and the top surface of the semiconductor structure comprises a flat part, on which the first electrode is disposed, and a concave-convex part surrounding the flat part, wherein a second distance, which is from the bottom surface of the semiconductor structure to the bottom surface of the concave-convex part contType: ApplicationFiled: June 7, 2018Publication date: January 30, 2020Applicant: LG INNOTEK CO., LTD.Inventors: Duk Hyun PARK, Byung Hak JEONG
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Patent number: 10381510Abstract: A red light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system are provided. The red light emitting device may include a first semiconductor layer having a first conductivity, an active layer provided on the first semiconductor layer and including a quantum well and a quantum barrier, a second semiconductor layer having a second conductivity and provided on the active layer, a third semiconductor layer having the second conductivity on the second semiconductor layer, a fourth semiconductor layer having the second conductivity on the third semiconductor layer, and a fifth semiconductor layer having the second conductivity on the fourth semiconductor layer. The third semiconductor layer and the fourth semiconductor layer may include an AlGaInP-based semiconductor layer, and an Al composition of the fourth semiconductor layer may be lower than an Al composition of the third semiconductor layer.Type: GrantFiled: March 25, 2016Date of Patent: August 13, 2019Assignee: LG INNOTEK CO., LTD.Inventors: Eun Bin Ko, Yong Jun Kim, Ki Yong Hong, Byung Hak Jeong
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Publication number: 20190148601Abstract: An embodiment discloses a light emitting device and a display comprising the same.Type: ApplicationFiled: April 21, 2017Publication date: May 16, 2019Inventors: Duk Hyun PARK, Eun Bin KO, Sung Wook MOON, Sang Rock PARK, Young Kuen JUNG, Ki Yong HONG, Byung Hak JEONG
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Publication number: 20180219131Abstract: A light emitting device of an embodiment comprises: a lower electrode; a light emitting structure disposed on the lower electrode and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an upper electrode pad disposed on the light emitting structure; at least one branch electrode connected to the upper electrode pad; and an upper ohmic layer disposed below the at least one branch electrode, wherein the upper electrode pad may include at least one connecting electrode connected to at least one branch electrode, and at least one connecting electrode may be integrally formed with the upper electrode pad and may project at certain intervals from a side surface of the upper electrode pad.Type: ApplicationFiled: August 5, 2016Publication date: August 2, 2018Inventors: Duk Hyun PARK, Sung Wook MOON, Sang Rock PARK, Byung Hak JEONG
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Patent number: 9673354Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.Type: GrantFiled: May 29, 2015Date of Patent: June 6, 2017Assignee: LG INNOTEK CO., LTD.Inventors: Ji Hyung Moon, Sang Youl Lee, Bum Doo Park, Chung Song Kim, Sang Rock Park, Byung Hak Jeong, Tae Yong Lee
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Publication number: 20160284934Abstract: A red light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system are provided. The red light emitting device may include a first semiconductor layer having a first conductivity, an active layer provided on the first semiconductor layer and including a quantum well and a quantum barrier, a second semiconductor layer having a second conductivity and provided on the active layer, a third semiconductor layer having the second conductivity on the second semiconductor layer, a fourth semiconductor layer having the second conductivity on the third semiconductor layer, and a fifth semiconductor layer having the second conductivity on the fourth semiconductor layer. The third semiconductor layer and the fourth semiconductor layer may include an AlGaInP-based semiconductor layer, and an Al composition of the fourth semiconductor layer may be lower than an Al composition of the third semiconductor layer.Type: ApplicationFiled: March 25, 2016Publication date: September 29, 2016Inventors: Eun Bin KO, Yong Jun KIM, Ki Yong HONG, Byung Hak JEONG
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Publication number: 20150349220Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.Type: ApplicationFiled: May 29, 2015Publication date: December 3, 2015Applicant: LG INNOTEK CO., LTD.Inventors: Ji Hyung MOON, Sang Youl LEE, Bum Doo PARK, Chung Song KIM, Sang Rock PARK, Byung Hak JEONG, Tae Yong LEE
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Patent number: 9041028Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a conductive support member, and a protection member on the light emitting structure. The light emitting structure has a first width and a second width. A difference between the first width and the second width defines a stepped structure or an inclined structure. The protection member is disposed on the stepped or the inclined structure defined by the difference between the first and second widths of the light emitting structure.Type: GrantFiled: February 23, 2011Date of Patent: May 26, 2015Assignee: LG INNOTEK CO., LTD.Inventors: Jung Hyeok Bae, Byung Hak Jeong, Kyung Wook Park, Chung Song Kim
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Publication number: 20110248301Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a conductive support member, and a protection member on the light emitting structure. The light emitting structure has a first width and a second width. A difference between the first width and the second width defines a stepped structure or an inclined structure. The protection member is disposed on the stepped or the inclined structure defined by the difference between the first and second widths of the light emitting structure.Type: ApplicationFiled: February 23, 2011Publication date: October 13, 2011Inventors: Jung Hyeok BAE, Byung Hak Jeong, Kyung Wook Park, Chung Song Kim