Abstract: An electronic device is disclosed. Moreover, various embodiment found through the disclosure are possible. The electronic device may include a camera module including an optical image stabilizer, a motion sensor, a processor electrically connected to the camera module and the motion sensor. The processor may be configured to obtain first motion information corresponding to shaking of the electronic device through the motion sensor, while at least partially obtaining an image frame, determine second motion information, which corresponds to motion of a lens or an image sensor included in the camera module, from the first motion information, using attribute information and a frequency pass filter of the optical image stabilizer, and perform digital image correction, based on the first motion information and the second motion information.

Abstract: An electronic device is disclosed. Moreover, various embodiment found through the disclosure are possible. An electronic device may include a lens assembly including, one or more lenses, an image sensor, an image stabilizer, and a processor. The lens assembly may be arranged to from a first angle between an optical axis of at least some lenses of the one or more lenses, and a surface of the image sensor. The processor may be configured to change an angle of the lens assembly through the image stabilizer in response to shaking of the electronic device, obtain an image through the image sensor, in a state that the angle of the lens assembly is changed, correct, based at least on the first angle and a second angle corresponding to the changed angle of the lens assembly, at least a portion of the image, which is distorted, by the second angle, and display the corrected image through a display electrically connected with the electronic device.

Abstract: An electronic device is disclosed. Moreover, various embodiment found through the disclosure are possible. An electronic device may include a lens assembly including, one or more lenses, an image sensor, an image stabilizer, and a processor. The lens assembly may be arranged to from a first angle between an optical axis of at least some lenses of the one or more lenses, and a surface of the image sensor. The processor may be configured to change an angle of the lens assembly through the image stabilizer in response to shaking of the electronic device, obtain an image through the image sensor, in a state that the angle of the lens assembly is changed, correct, based at least on the first angle and a second angle corresponding to the changed angle of the lens assembly, at least a portion of the image, which is distorted, by the second angle, and display the corrected image through a display electrically connected with the electronic device.

Abstract: An example electronic device includes a camera, a sensor obtaining first motion information about motion of the electronic device, and a processor electrically connected to the camera and the sensor. The processor is configured to receive a plurality of image frames from the camera, to generate second motion information by applying a filter for a specified frequency band to the first motion information, to generate one or more image frames, in each of which at least partial motion of the motion is compensated based on the second motion information, from the at least part of image frames, and to display the one or more image frames through a display operatively connected to the electronic device. The receiving includes obtaining the first motion information about at least part of image frames among the plurality of image frames.

Abstract: An electronic device is disclosed. Moreover, various embodiment found through the disclosure are possible. The electronic device may include a camera module including an optical image stabilizer, a motion sensor, a processor electrically connected to the camera module and the motion sensor. The processor may be configured to obtain first motion information corresponding to shaking of the electronic device through the motion sensor, while at least partially obtaining an image frame, determine second motion information, which corresponds to motion of a lens or an image sensor included in the camera module, from the first motion information, using attribute information and a frequency pass filter of the optical image stabilizer, and perform digital image correction, based on the first motion information and the second motion information.

Abstract: Disclosed is an electronic device. The electronic device according to an embodiment includes a camera, a sensor obtaining first motion information about motion of the electronic device, and a processor electrically connected to the camera and the sensor. The processor is configured to receive a plurality of image frames from the camera, to generate second motion information by applying a filter for a specified frequency band to the first motion information, to generate one or more image frames, in each of which at least partial motion of the motion is compensated based on the second motion information, from the at least part of image frames, and to display the one or more image frames through a display operatively connected to the electronic device. The receiving includes obtaining the first motion information about at least part of image frames among the plurality of image frames. Moreover, various embodiment grasped through the disclosure are possible.

Abstract: A wafer processing apparatus includes a reaction tube extending in a vertical direction, a door plate positioned under the reaction tube to seal the reaction tube. The door plate may be configured to load a boat into the reaction tube and support a plurality of wafers. The wafer processing apparatus may include a cap plate on the door plate, the cap plate including a cylindrical body. The cylindrical body may surround a lower side surface of the boat. A guiding recess may be formed in an outer surface of the cylindrical body along a circumferential direction of the cylindrical body. The wafer processing apparatus may include an exhaust portion configured to remove the first gas from the reaction tube through the guiding recess.

Abstract: A batch type apparatus may include a tube; a boat configured to receive a plurality of semiconductor substrates, the boat vertically moved into the tube; a gas nozzle vertically arranged in the tube, the tube having a first portion and a second portion upwardly extended from the first portion; a gas pipe for supplying reaction gases to the gas nozzle, the gas pipe having a horizontal extension and a vertical extension, and the vertical extension extended in the gas nozzle; a fixing member for fixing the first portion of the gas nozzle to the gas pipe, the fixing member having strength higher than that of the gas nozzle; and a clamping member for clamping the gas pipe to the tube. Therefore, breakage of the gas nozzle may be suppressed.

Abstract: A wafer processing apparatus includes a reaction tube extending in a vertical direction, a door plate positioned under the reaction tube to seal the reaction tube. The door plate may be configured to load a boat into the reaction tube and support a plurality of wafers. The wafer processing apparatus may include a cap plate on the door plate, the cap plate including a cylindrical body. The cylindrical body may surround a lower side surface of the boat. A guiding recess may be formed in an outer surface of the cylindrical body along a circumferential direction of the cylindrical body. The wafer processing apparatus may include an exhaust portion configured to remove the first gas from the reaction tube through the guiding recess.

Abstract: A batch type apparatus may include a tube; a boat configured to receive a plurality of semiconductor substrates, the boat vertically moved into the tube; a gas nozzle vertically arranged in the tube, the tube having a first portion and a second portion upwardly extended from the first portion; a gas pipe for supplying reaction gases to the gas nozzle, the gas pipe having a horizontal extension and a vertical extension, and the vertical extension extended in the gas nozzle; a fixing member for fixing the first portion of the gas nozzle to the gas pipe, the fixing member having strength higher than that of the gas nozzle; and a clamping member for clamping the gas pipe to the tube. Therefore, breakage of the gas nozzle may be suppressed.

Abstract: A deposition apparatus including a vaporizer; a chemical supplier; a pipe line coupled between the vaporizer and the chemical supplier; and a solvent supplier coupled to the pipe line. A method of cleaning a deposition apparatus including putting a solvent into a vaporizer; cleaning the vaporizer by impregnating the vaporizer with the solvent; and removing contaminated liquid which remains after cleaning the vaporizer.

Abstract: In a liquid supplying unit liquid is supplied from a buffer vessel to an external unit by pressurizing the liquid present in the buffer vessel using gas supplied to the buffer vessel. A pressure measuring member is provided to measure the pressure inside the buffer vessel, and when the pressure inside the buffer vessel is equal to or greater than a preset reference pressure during refilling of the buffer vessel, gas is discharged from the buffer vessel through a vent line.

Abstract: A method of cleaning a reaction chamber is provided. In the method, a wafer is removed from the reaction chamber, and a nitrogen triflouride (NF3) gas or NF3 plasma is implanted into the reaction chamber. The NF3 gas or NF3 plasma reacts with a phosphorous polymer located in the reaction chamber, and the phosphorus polymer is removed from the reaction chamber.

Abstract: A plasma enhanced chemical vapor deposition apparatus and a method of forming a nitride layer using the same, wherein the plasma enhanced CVD apparatus includes a process chamber including an upper chamber with a dome shape, a lower chamber, and an insulator therebetween, a gas distributing ring, a susceptor for supporting a wafer and heating the process chamber, a plasma compensation ring surrounding the susceptor, a vacuum pump and an electric power source connected to the process chamber. The gas distributing ring has a plurality of upwardly inclined nozzles, allowing upward distribution of reactive gases. The method of forming a nitride layer includes forming a protective film on inner walls of a process chamber, the protective film having at least two layers of differeing dielectric constant, and sequentially supplying reactive gases to the process chamber. A nitride layer formed thereby has low hydrogen content, good density and oxidation resistance.

Abstract: A plasma enhanced chemical vapor deposition apparatus and a method of forming a nitride layer using the same, wherein the plasma enhanced CVD apparatus includes a process chamber including an upper chamber with a dome shape, a lower chamber, and an insulator therebetween, a gas distributing ring, a susceptor for supporting a wafer and heating the process chamber, a plasma compensation ring surrounding the susceptor, a vacuum pump and an electric power source connected to the process chamber. The gas distributing ring has a plurality of upwardly inclined nozzles, allowing upward distribution of reactive gases. The method of forming a nitride layer includes forming a protective film on inner walls of a process chamber, the protective film having at least two layers of differeing dielectric constant, and sequentially supplying reactive gases to the process chamber. A nitride layer formed thereby has low hydrogen content, good density and oxidation resistance.

Abstract: A plasma enhanced chemical vapor deposition apparatus and a method of forming a nitride layer using the same, wherein the plasma enhanced CVD apparatus includes a process chamber including an upper chamber with a dome shape, a lower chamber, and an insulator therebetween, a gas distributing ring, a susceptor for supporting a wafer and heating the process chamber, a plasma compensation ring surrounding the susceptor, a vacuum pump and an electric power source connected to the process chamber. The gas distributing ring has a plurality of upwardly inclined nozzles, allowing upward distribution of reactive gases. The method of forming a nitride layer includes forming a protective film on inner walls of a process chamber, the protective film having at least two layers of differeing dielectric constant, and sequentially supplying reactive gases to the process chamber. A nitride layer formed thereby has low hydrogen content, good density and oxidation resistance.

Abstract: A plasma enhanced chemical vapor deposition apparatus and a method of forming a nitride layer using the same, wherein the plasma enhanced CVD apparatus includes a process chamber including an upper chamber with a dome shape, a lower chamber, and an insulator therebetween, a gas distributing ring, a susceptor for supporting a wafer and heating the process chamber, a plasma compensation ring surrounding the susceptor, a vacuum pump and an electric power source connected to the process chamber. The gas distributing ring has a plurality of upwardly inclined nozzles, allowing upward distribution of reactive gases. The method of forming a nitride layer includes forming a protective film on inner walls of a process chamber, the protective film having at least two layers of differeing dielectric constant, and sequentially supplying reactive gases to the process chamber. A nitride layer formed thereby has low hydrogen content, good density and oxidation resistance.