Abstract: Disclosed are a system and method for preventing and monitoring a leakage of water from a tank liner at a storage tank having: a concrete reservoir; the tank liner made up of a wall liner that is formed by coupling a plurality of first panels and is attached to an inner wall of the concrete reservoir, and a floor liner that is formed by coupling a plurality of second panels, is attached to a floor of the concrete reservoir, and is coupled to the wall liner by welding; a leaking water collecting plate formed by welding a plurality of third panels and inserted between the floor liner and the floor of the concrete reservoir; and an edge leaking water collecting channel buried in an edge of the storage tank and configured to collect leaking water discharged between the floor liner and the leaking water collecting plate.

Abstract: Disclosed are a system and method for preventing and monitoring a leakage of water from a tank liner at a storage tank having: a concrete reservoir; the tank liner made up of a wall liner that is formed by coupling a plurality of first panels and is attached to an inner wall of the concrete reservoir, and a floor liner that is formed by coupling a plurality of second panels, is attached to a floor of the concrete reservoir, and is coupled to the wall liner by welding; a leaking water collecting plate formed by welding a plurality of third panels and inserted between the floor liner and the floor of the concrete reservoir; and an edge leaking water collecting channel buried in an edge of the storage tank and configured to collect leaking water discharged between the floor liner and the leaking water collecting plate.

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a first bit line structure extending in a first direction, a second bit line structure extending in the first direction and spaced apart from the first bit line structure, a storage contact plug located between the first bit line structure and the second bit line structure, and extending in a second direction perpendicular to the first direction, a first plug insulator located between the first bit line structure and the second bit line structure, and configured to contact a side surface extending in the second direction of the storage contact plug, and a plug isolation pattern located between the first bit line structure and the first plug insulator.

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a first bit line structure extending in a first direction, a second bit line structure extending in the first direction and spaced apart from the first bit line structure, a storage contact plug located between the first bit line structure and the second bit line structure, and extending in a second direction perpendicular to the first direction, a first plug insulator located between the first bit line structure and the second bit line structure, and configured to contact a side surface extending in the second direction of the storage contact plug, and a plug isolation pattern located between the first bit line structure and the first plug insulator.

Abstract: A method of fabricating a semiconductor device comprises sequentially forming a first conductive layer, a first insulating interlayer, a second conductive layer, and a second insulating interlayer on a semiconductor substrate. A mask layer is formed on the second insulating interlayer, and then the second insulating interlayer, the second conductive layer, and the first insulating interlayer are selectively removed using the mask layer as an etch mask to form a contact hole exposing the first conductive layer. Portions of the second conductive layer exposed in sidewalls of the contact hole are then selectively etched to form a recess between the first and second insulating interlayers. Next, a third conductive layer is formed on a bottom surface and on sidewalls of the contact hole, a metal silicide layer is formed to fill the recess, and a fourth conductive layer is formed to fill the contact hole over the metal silicide layer.

Abstract: A method of fabricating a semiconductor device comprises sequentially forming a first conductive layer, a first insulating interlayer, a second conductive layer, and a second insulating interlayer on a semiconductor substrate. A mask layer is formed on the second insulating interlayer, and then the second insulating interlayer, the second conductive layer, and the first insulating interlayer are selectively removed using the mask layer as an etch mask to form a contact hole exposing the first conductive layer. Portions of the second conductive layer exposed in sidewalls of the contact hole are then selectively etched to form a recess between the first and second insulating interlayers. Next, a third conductive layer is formed on a bottom surface and on sidewalls of the contact hole, a metal silicide layer is formed to fill the recess, and a fourth conductive layer is formed to fill the contact hole over the metal silicide layer.