Patents by Inventor Byung-Hwan So

Byung-Hwan So has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Laser apparatus and manufacturing method of display apparatus using the same
    Patent number: 11961851
    Abstract: A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.
    Type: Grant
    Filed: February 15, 2022
    Date of Patent: April 16, 2024
    Assignee: Samsung Display Co., Ltd.
    Inventors: Dong-min Lee, Ji-Hwan Kim, Jongoh Seo, Byung Soo So, Dong-Sung Lee, Jonghoon Choi
  • Method of estimating self refresh period of semiconductor memory device
    Patent number: 8264904
    Abstract: In a method of estimating a self refresh period of a semiconductor memory device according to an exemplary embodiment, a plurality of internal address signals are reset in response to a refresh reset signal. The plurality of internal address signals are sequentially changed synchronously with an oscillation signal. A refresh completion signal is generated based on the plurality of internal address signals. The self refresh period is detected based on the refresh reset signal and the refresh completion signal.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: September 11, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyung-Dong Kim, Byung-Hwan So
  • Method of estimating self refresh period of semiconductor memory device
    Publication number: 20100302883
    Abstract: In a method of estimating a self refresh period of a semiconductor memory device according to an exemplary embodiment, a plurality of internal address signals are reset in response to a refresh reset signal. The plurality of internal address signals are sequentially changed synchronously with an oscillation signal. A refresh completion signal is generated based on the plurality of internal address signals. The self refresh period is detected based on the refresh reset signal and the refresh completion signal.
    Type: Application
    Filed: March 31, 2010
    Publication date: December 2, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyung-Dong Kim, Byung-Hwan So