Patents by Inventor Byung-Hwan So

Byung-Hwan So has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12208466
    Abstract: A laser irradiation apparatus includes a laser beam generator that generates a first laser beam, a beam expander that expands the first laser beam and outputs the expanded first laser beam as a second laser beam, a beam splitter that splits the second laser beam into third laser beams and outputs the third laser beams, and a beam condenser that condenses the third laser beams and outputs condensed third laser beams. The beam expander includes a first lens having a first focal length and a second lens having a second focal length. The first lens is disposed between the laser beam generator and the second lens, the second lens is disposed between the first lens and the beam splitter, and the laser beam generator is spaced apart from the first lens by the first focal length.
    Type: Grant
    Filed: May 7, 2021
    Date of Patent: January 28, 2025
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Ji-Hwan Kim, Byung Soo So, Jonghoon Choi
  • Patent number: 8264904
    Abstract: In a method of estimating a self refresh period of a semiconductor memory device according to an exemplary embodiment, a plurality of internal address signals are reset in response to a refresh reset signal. The plurality of internal address signals are sequentially changed synchronously with an oscillation signal. A refresh completion signal is generated based on the plurality of internal address signals. The self refresh period is detected based on the refresh reset signal and the refresh completion signal.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: September 11, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyung-Dong Kim, Byung-Hwan So
  • Publication number: 20100302883
    Abstract: In a method of estimating a self refresh period of a semiconductor memory device according to an exemplary embodiment, a plurality of internal address signals are reset in response to a refresh reset signal. The plurality of internal address signals are sequentially changed synchronously with an oscillation signal. A refresh completion signal is generated based on the plurality of internal address signals. The self refresh period is detected based on the refresh reset signal and the refresh completion signal.
    Type: Application
    Filed: March 31, 2010
    Publication date: December 2, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyung-Dong Kim, Byung-Hwan So