Patents by Inventor Byung-hyun Yim

Byung-hyun Yim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8587700
    Abstract: A method of detecting defects in an image sensor that may occur from a floating diffusion area of the image sensor, a tester using the method, and a control signal generator using the method include a photo diode generating charges corresponding to an image signal; a transmission transistor having a first terminal connected to a the photodiode and a second terminal connected to a floating diffusion area, thereby transmitting the charges generated in the photo diode to the floating diffusion area in response to a charge transmission control signal; and a reset transistor having a first terminal applied by a reset voltage and a second transistor connected to the floating diffusion area, thereby transmitting the reset voltage to the floating diffusion area in response to a reset control signal. The reset transistor is turned on during at least one sampling zone selected between reset level sampling and signal level sampling that are performed with respect to the image sensor.
    Type: Grant
    Filed: October 19, 2009
    Date of Patent: November 19, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun-taek Lee, Byung-hyun Yim, Kwang-hee Lee, Ji-hoon Jung
  • Publication number: 20100097477
    Abstract: A method of detecting defects in an image sensor that may occur from a floating diffusion area of the image sensor, a tester using the method, and a control signal generator using the method include a photo diode generating charges corresponding to an image signal; a transmission transistor having a first terminal connected to a the photodiode and a second terminal connected to a floating diffusion area, thereby transmitting the charges generated in the photo diode to the floating diffusion area in response to a charge transmission control signal; and a reset transistor having a first terminal applied by a reset voltage and a second transistor connected to the floating diffusion area, thereby transmitting the reset voltage to the floating diffusion area in response to a reset control signal. The reset transistor is turned on during at least one sampling zone selected between reset level sampling and signal level sampling that are performed with respect to the image sensor.
    Type: Application
    Filed: October 19, 2009
    Publication date: April 22, 2010
    Applicant: Samsung Electronics, Co., Ltd.
    Inventors: Jun-taek Lee, Byung-hyun Yim, Kwang-hee Lee, Ji-hoon Jung
  • Publication number: 20050285166
    Abstract: Monitoring patterns for an imaging device and a method of monitoring processing using the monitoring patterns are disclosed. Processing errors in the imaging device are detected and estimated by measuring resistances between main impurity regions and associated sub impurity regions in the monitoring patterns. Monitoring patterns corresponding to mis-aligned regions in the imaging device have varying resistances between the main impurity region and the associated sub impurity regions.
    Type: Application
    Filed: March 28, 2005
    Publication date: December 29, 2005
    Inventors: Jun-taek Lee, Byung-hyun Yim, Seok-ha Lee, Sun-yong Park